Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe_(2)

Heterostructures of van der Waals(vdW)ferromagnetic materials have become a focal point in research of lowdimensional spintronic devices.The current direction in spin valves is commonly perpendicular to the plane(CPP).However,the transport properties of the CPP mode remain largely unexplored.In this work,current-in-plane(CIP)mode and CPP mode for CrTe_(2) thin films are carefully studied.The temperature-dependent longitudinal resistance transitions from metallic(CIP)to semiconductor behavior(CPP),with the electrical resistivity of CPP increased by five orders of magnitude.More importantly,the transport properties of the CPP can be categorized into a single-gap tunneling-through model with the activation energy(Ea)of1.34 meV/gap at 300–150 K,the variable range hopping model with a linear negative magnetoresistance at 150–20 K,and weak localization region with a nonlinear magnetic resistance below 20 K.This study explores the vertical transport in CrTe_(2) materials for the first time,contributing to understand its unique properties and to pave the way for its potential in spin valve devices.

Calculation of Magnetic Configuration and Resistance for Nanomagnets

Based on a classical Heisenberg lattice model with dipole-dipole interaction and the method of spin dynamic simulation, the magnetic configurations (MC), hysteresis loops (HL) and magnetic resistance (MR) of the nanomagnets with different geometries, such as circle, square and rectangle, are studied for different directions of applied field. In the case of perpendicular field to the plane, the magnetization and MR are reversible and have not hysteresis. When the field is applied in the plane, the HL is irreversible and is qualitatively well agreeable with the current experimental results. The MR loop is also irreversible and appears two peaks distributed at two sides around zero field. The peaks of magnetic resistance are relative to the vortex state or similar configuration. Large easy-axis anisotropy will suppress the MC anisotropy, and the large magnetoresistance effect disappears.

Development of magnetocaloric materials in room temperature magnetic refrigeration application in recent six years

Some magnetocaloric materials were used successfully in magnetic refrigeration application and became one of the critical parts of magnetic refrigeration technology whose delightful progresses were made worldwide in the past 30 years. At the same time, the research on giant magnetocaloric materials will accelerate the development of room temperature magnetic refrigeration. In this paper, the new theoretical and experimental investigations on magnetic materials in room temperature application were described, including Gd and its binary and ternary intermetallic compounds, Mn-based compounds, La(Fe13-xMx)-based compounds and manganites. Based on the analysis of hysteresis, corrosion, cost and heat process, the comparison between different families of magnetic materials was discussed. Further research of room temperature magnetic refrigerant was suggested.

Spontaneous magnetization and resistivity jumps in bilayered manganite (La_(0.8)Eu_(0.2))_(4/3)Sr_(5/3)Mn_2O_7 single crystals

Owing to the inhomogeneous state resulting from the doping of a small number of Eu ions into Laa/3Sr5/3Mn2O7, from the resulting single crystal （La0.8Eu0.2）a/3Sr5/3Mn2O7 we have observed the magnetization jump, the resistivity jump, as well as the relaxation phenomena. For （Lao.sEuo.2）a/3Sr5/3Mn2O7, it has a very delicate ground state due to the interplays among spin, charge, orbital, lattice degrees of freedom. Consequently, the magnetization state is sensitive to temperature, magnetic field, as well as time. Meanwhile, the evolution of the magnetization with time shows a spontaneous jump when both the temperature and the magnetic field are constant. Similar step-like behaviours are also observed in resistivity. All these results suggest that Eu doping can greatly modulate the physical properties of Laa/3Sr5/3Mn2O7 and cause such interesting behaviours.

KINETIC FUNCTIONS IN MAGNETOHYDRODYNAMICS WITH RESISTIVITY AND HALL EFFECT

We consider a nonlinear hyperbolic system of two conservation laws which arises in ideal magnetohydrodynamics and includes second-order terms accounting for magnetic resistivity and Hall effect. We show that the initial value problem for this model may lead to solutions exhibiting complex wave structures, including undercompressive nonclassical shock waves. We investigate numerically the subtle competition that takes place between the hyperbolic, diffusive, and dispersive parts of the system. Following Abeyratne, Knowles, LeFloch, and Truskinovsky, who studied similar questions arising in fluid and solid flows, we determine the associated kinetic function which characterizes the dynamics of undereompressive shocks driven by resistivity and Hall effect. To this end, we design a new class of ＂schemes with eontroled dissipation＂, following recent work by LeFloch and Mohammadian. It is now recognized that the equivalent equation associated with a scheme provides a guideline to design schemes that capture physically relevant, nonclassical shocks. We propose a new class of schemes based on high-order entropy conservative, finite differences for the hyperbolic flux, and high-order central differences for the resistivity and Hall terms. These schemes are tested for several regimes of （co-planar or not） initial data and parameter values, and allow us to analyze the properties of nonclassical shocks and establish the existence of monotone kinetic functions in magnetohydrodynamics.

Effect of Axial Magnetic Field on the Microstructure, Hardness and Wear Resistance of TiN Films Deposited by Arc Ion Plating

TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.

Superconductivity in self-flux-synthesized single crystalline R2Pt3Ge5(R=La,Ce,Pr)

In order to study the basic superconductivity properties of R2Pt3Ge5, we synthesized the single crystalline samples by the Pt–Ge self-flux method. R2Pt3Ge5（R = La, Ce） were also grown for a systematic study. Zero-resistivity was observed in both the La-and Pr-based samples below the reported superconducting transition temperatures. However, magnetic susceptibility measurements showed low superconductivity volume fractions in both La2Pt3Ge5 and R2Pt3Ge5（less than2%）. Ce2Pt3Ge5 did not show any signature of superconductivity. From the specific heat measurements, we did not observe a superconducting transition peak in R2Pt3Ge5, suggesting that it is not a bulk superconductor. The magnetic susceptibility and heat capacity measurements revealed two antiferromagnetic（AFM） orders in R2Pt3Ge5 at T（N1）= 4.2 K and T（N2）= 3.5K, as well as a single AFM transition at TN= 3.8 K in Ce2Pt3Ge5.