Theoretical investigation of frequency characteristics of free oscillation and injection-locked magnetrons

The frequency characteristics of free oscillation magnetron（FOM） and injection-locked magnetron（ILM） are theoretically investigated.By using the equal power voltage obtained from the experiment data,expressions of the frequency and radio frequency（RF） voltage of FOM and ILM,as well as the locking bandwidth,on the anode voltage and magnetic field are derived.With the increase of the anode voltage and the decrease of the magnetic field,the power and its growth rate increase,while the frequency increases and its growth rate decreases.The theoretical frequency and power of FOM agree with the particle-in-cell（PIC） simulation results.Besides,the theoretical trends of the power and frequency with the anode voltage and magnetic field are consistent with the experimental results,which verifies the accuracy of the theory.The theory provides a novel calculation method of frequency characteristics.It can approximately analyze the power and frequency of both FOM and ILM,which promotes the industrial applications of magnetron and microwave energy.

Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

Design multifunctional Mg–Zr coatings regulating Mg alloy bioabsorption

Magnesium(Mg)alloys are widely used for temporary bone implants due to their favorable biodegradability,cytocompatibility,hemocompatibility,and close mechanical properties to bone.However,rapid degradation and inadequate strength limit their applicability.To overcome this,the direct current magnetron sputtering technique is employed for surface coating in Mg-based alloys using various zirconium(Zr)content.This approach presents a promising strategy for simultaneously improving corrosion resistance,maintaining biocompatibility,and enhancing strength without compromising osseointegration.By leveraging Mg’s inherent biodegradability,it has the potential to minimize the need for secondary surgeries,thereby reducing costs and resources.This paper is a systematic study aimed at understanding the corrosion mechanisms of Mg–Zr coatings,denoted Mg-xZr(x=0–5 at.%).Zr-doped coatings exhibited columnar growth leading to denser and refined structures with increasing Zr content.XRD analysis confirmed the presence of the Mg(00.2)basal plane,shifting towards higher angles(1.15°)with 5 at.%Zr doping due to lattice parameter changes(i.e.,decrease and increase of“c”and“a”lattice parameters,respectively).Mg–Zr coatings exhibited“liquidphilic”behavior,while Young’s modulus retained a steady value around 80 GPa across all samples.However,the hardness has significantly improved across all samples’coating,reaching the highest value of(2.2±0.3)GPa for 5 at.%Zr.Electrochemical testing in simulated body fluid(SBF)at 37℃ revealed a significant enhancement in corrosion resistance for Mg–Zr coatings containing 1.0–3.4 at.%Zr.Compared with the 5 at.%Zr coating which exhibited a corrosion rate of 32 mm/year,these coatings displayed lower corrosion rates,ranging from 1 to 12 mm/year.This synergistic enhancement in mechanical properties and corrosion resistance,achieved with 2.0–3.4 at.%Zr,suggests potential ability for reducing stress shielding and controlled degradation performance,and consequently,promising functional biodegradable materials for temporary bone implants.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

High Permeability in Broadband of Co-sputtered [Fe-Fe_(20)Ni_(80)/Cr]_(n) Multilayer Films

To achieve high microwave permeability in wide-band for the micron-thick magnetic films,[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer structure was proposed by co-sputtering Fe and FeNi to form the magnetic layers and Cr to form the interlayers.The multilayer structure contributes to the high permeability by reducing the coercivity and diminishing out-of-plane magnetization.The maximum imaginary permeability of[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer film reaches a large value of 800 at 0.52 GHz even though its overall thickness exceeds 1μm.Besides,the magnetic resonance frequency of the multilayer film can be modulated from 0.52 to 1.35 GHz by adjusting the sputtering power of Fe from 0 to 86 W,and its bandwidth for μ’’>200(Δf) is as large as 2.0 GHz.The desirable broad Δf of magnetic permeability,which can be well fitted by the Landau-Lifshitz-Gilbert equations,is due to dual magnetic resonances originated from double magnetic phases of Fe and FeNi that are of different saturation magnetization.The micron-thick multilayer films with high permeability in extended waveband are promising candidate for electromagnetic noise suppression application.

Tribological performance under different environments of Ti-C-N composite films for marine wear-resistant parts

The need for reducing the wear in mechanical parts used in the industry makes self-lubricant films one of the sustainable solutions to achieve long-term protection under different environmental conditions.The purpose of this work is to study the influence of C additions on the tribological behavior of a magnetron-sputtered TiN film in air,water,and seawater.The results show that the addition of C into the TiN binary film induced a new amorphous phase,and the films exhibited a dual phase of fcc(face-centered cubic)-TiN and amorphous carbon.The antifriction and wear-resistance properties were enhanced in air and water by adding 19.1at%C.However,a further increase in the C concentration improved anti-frictional properties but also led to higher wear rates.Although the amorphous phase induced microbatteries and accelerated the corrosion of TiN phases in seawater,the negative abrasion state was detected for all Ti-C-N films due to the adhesion of the tribocorrosion debris on the wear track.

Effects of preparation parameters on growth and properties of β-Ga_(2)O_(3) film

The Ga_(2)O_(3) films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters(such as argon–oxygen flow ratio, sputtering power, sputtering time and annealing temperature)on the growth and properties(e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer(XRD), scanning electron microscope(SEM), and ultraviolet-visible spectrophotometer(UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the β-Ga_(2)O_(3) film are influenced by those parameters. All β-Ga_(2)O_(3) films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I–V curves show that the Ohmic behavior between metal and β-Ga_(2)O_(3) films is obtained at 900℃. Those results will be helpful for the further research of β-Ga_(2)O_(3) photoelectric semiconductor.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance

As a metal alloy,NiCr films have a relatively high resistivity and low temperature coefficient of resistance (TCR) and are widely used in electronic components and sensors.However,the resistivity of pure NiCr is insufficient for high-resistance and highly stable film resistors.In this study,a quaternary NiCrAlSi target (47:33:10:10,wt.%) was successfully used to prepare resistor films with resistivities ranging from 1000 to 10 000μΩcm and TCR within±100 ppm/K.An oxygen flow was introduced during the sputtering process.The films exhibit hightemperature stability at 450℃.The films were analyzed using Auger electron spectroscopy,x-ray diffraction,time-of-flight secondary-ion mass spectrometry,and x-ray photoelectron spectroscopy.The results show that the difference in the oxide proportion of the films caused the differences in resistivity.The near-zero TCR values were considered to be due to the competition between silicon and other metals.This study provides new insights into the electrical properties of NiCr-based films containing Si,which will drive the manufacturing of resistors with high resistivity and zero TCR.

Insights into the oxidation resistance mechanism and tribological behaviors of multilayered TiSiN/CrVxN hard coatings

In the last decades,vanadium alloyed coatings have been introduced as potential candidates for self-lubrication due to their perfect tribological properties.In this work,the influence of V incorporation on the wear performance and oxidation resistance of TiSiN/CrN film coatings deposited by direct current(DC)reactive magnetron sputtering is investigated.The results show that vanadium incorporation significantly decreases the oxidation resistance of the coatings.In general,two layers are formed during the oxidation process:i)Ti(V)O_(2) on top,followed by a protective layer,which is subdivided into two layers,Cr_(2)O_(3) and Si-O.ii)The diffusion of V controls the oxidation of V-containing coatings.The addition of vanadium improves the wear resistance of coatings,and the wear rate decreases with increasing V content in the coatings;however,the friction coefficient is independent of the chemical composition of the coatings.The wear of the V-containing coatings is driven by polishing wear.

Microporous Cyclodextrin Film with Funnel-type Channel Polymerized on Electrospun Cellulose Acetate Membrane as Separators for Strong Trapping Polysulfides and Boosting Charging in Lithium-Sulfur Batteries

The“shuttle effect”of polysulfides hampers the commercialization of lithium-sulfur(Li-S)batteries.Here,a thin molecular sieve film was decorated on the surface of an electrospun cellulose acetate(CA)membrane derived from recycled cigarette filters,where the truncated cone structureβ-cyclodextrin(β-CD)was selected as the building block to physically block and chemically trap polysulfides while simultaneously dramatically speeding up ion transport.Furthermore,on theβ-CD free side of the separator facing the cathode,graphite carbon(C)was sputtered as an upper current collector,which barely increases the thickness.These benefits result in an initial discharge performance of 1378.24 mAh g^(−1) and long-term cycling stability of 863.78 mAh g^(−1) after 1000 cycles at 0.2 C for the battery with theβ-CD/CA/C separator,which is more than three times that of the PP separator after 500 cycles.Surprisingly,the funnel-type channel ofβ-CD generates a differential ionic fluid pressure on both sides,speeding up ion transport by up to 69%,and a 65.3%faster charging rate of 9484 mA g^(−1) was achieved.The“funnel effect”of a separator is regarded as a novel and high-efficiency solution for fast charging of Li-S and other lithium secondary batteries.

Preparation of Sn-doped Ga_(2)O_(3) thin films and their solar-blind photoelectric detection performance

Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.

INTERFACE REACTION IN MAGNETIC MULTILAYERS

Ta/NiO/NiFe/Ta multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) between NiO and NiFe reached 120O e. The composition and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe=Ni+FeO and 3NiO+2Fe=3Ni+Fe2O3. The thickness of the chemical reaction as estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products are magnetic defects, and we believe that the Hex and the coercivity (Hc) of NiO/NiFe are affected by these defects. Moreover, the results also show that there is an intermixing layer at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta+5NiO+Ta2O5. This interface reaction has an effect on the exchange coupling as well. The thickness of the intermixing layer as estimated by XPS depth-profiles was about 8-10 nm.

高功率脉冲非平衡磁控溅射放电特性和参数研究

用线圈电流控制非平衡磁场,用汤森放电击穿形成深度自触发放电,用磁阱捕获放电形成的二次电子和导致漂移电流,形成了高功率非平衡磁控溅射放电。采用偏压为-100V相对磁控靶放置的圆形平面电极收集饱和离子电流;在距离磁控靶14cm的位置由Langmuir探针测量浮置电位;示波器测量磁控靶的脉冲电压、电流、浮置电位和饱和离子电流信号。装置的放电脉冲功率达到0.9MW,脉冲频率最大值为40Hz左右,空间电荷限制条件是控制电子电流和离子电流的主要机制。

Modeling and experimental studies of a side band power re-injection locked magnetron

A side band power re-injection locked （SBPRIL） magnetron is presented in this paper. A tuning stub is placed between the external injection locked （EIL） magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell （PIC） simulation of a 10-vane continuous wave （CW） magnetron model is presented. Computer simulation predicts that the frequency spectrum＇s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron.

High-Power Simultaneous Wireless Information and Power Transfer: Injection-Locked Magnetron Technology

Applications using simultaneous wireless information and power transfer(SWIPT)have increased significantly.Wireless communication technologies can be combined with the Internet of Things to develop many innovative applications using SWIPT,which is mainly based on wireless energy harvesting from electromagnetic waves used in communications.Wireless power transfer that uses magnetrons has been developed for communication technologies.Injection-locked magnetrons that can be used to facilitate high-power SWIPT for several devices are reviewed in this paper.This new technology is expected to pave the way for promoting the application of SWIPT in a wide range of fields.

陶瓷靶射频磁控溅射TiO_2薄膜的制备和光催化特性(英文)

本文采用Ti O2陶瓷靶及射频磁控溅射法在玻璃衬底上制备出了一系列透明Ti O2薄膜,利用X射线衍射(XRD)和原子力显微镜(AFM)对不同衬底温度和溅射功率的Ti O2薄膜结构和形貌进行了表征,结果随着溅射条件的不同会出现锐钛矿或锐钛矿-金红石的混合相。利用UV-Vis-Nir分光光度计测得的透射光谱表明随着衬底温度和溅射功率的增加吸收边有一定的红移。薄膜的光催化活性通过对罗丹明B溶液的降解效率来表征,结果表明在550℃和130 W表面出最佳的光催化效果。

Influences of working pressure on properties for TiO_2 films deposited by DC pulse magnetron sputtering

TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Lithium intercalation/de-intercalation behavior of a composite Sn/C thin film fabricated by magnetron sputtering

A tin film of 320 nm in thickness on Cu foil and its composite film with graphite of-50 nm in thickness on it were fabricated by magnetron sputtering. The surface morphology, composition, surface distributions of alloy elements, and lithium intercalation/de-intercalation behaviors of the fabricated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, electron probe microanalyzer （EPMA）, X-ray photoelectron spectroscopy （XPS）, inductively coupled plasma atomic emission spectrometry （ICP）, cyclic voltammetry （CV）, and galvanostatic charge/discharge （GC） measurements. It is found that the lithium intercalation/de-intercalation behavior of the Sn film can be significantly improved by its composite with graphite. With cycling, the discharge capacity of the Sn film without composite changes from 570 mAh/g of the 2nd cycle to 270 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 90% and 95%. Nevertheless, the discharge capacity of the composite Sn/C film changes from 575 mAh/g of the 2nd cycle to 515 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 95% and 100%. The performance improvement of tin by its composite with graphite is ascribed to the retardation of the bulk tin cracking from volume change during lithium intercalation and de-intercalation, which leads to the pulverization of tin.