The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same dia...The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.展开更多
The general expressions based on the Fermi distribution of the free charge carriers are applied for estimation of the transport characteristics in superconductors at the temperature well above the superconducting phas...The general expressions based on the Fermi distribution of the free charge carriers are applied for estimation of the transport characteristics in superconductors at the temperature well above the superconducting phase transition temperature TC. The Hall-effect experimental results in the normal state of the superconductor YBa2Cu3O7-δ are not finally explained. On the ground of the randomly moving charge carriers, the transport characteristics of the randomly moving charge carriers for both single type and two types of the charge carriers are presented. The particular attention has been pointed to the Hall-effect measurement results of the high-TC superconductor YBa2Cu3O7-δ. It is at the first time derived the Hall coefficient expression for two type of highly degenerate charge carriers (electrons and holes) on the ground of the randomly moving charge carriers at the Fermi surface. It is shown that the Hall coefficient and other transport characteristics are determined by the ratio between the electron-like and hole-like densities of states at the Fermi surface.展开更多
TheⅣ-Ⅵcompound GeTe is considered as a promising alternative to the toxic PbTe for high-efficiency mid-temperature thermoelectric applications.However,pristine GeTe suffers from a high concentration of Ge vacancies,...TheⅣ-Ⅵcompound GeTe is considered as a promising alternative to the toxic PbTe for high-efficiency mid-temperature thermoelectric applications.However,pristine GeTe suffers from a high concentration of Ge vacancies,resulting in an excessively high hole concentration(>1×10^(21)cm^(-3)),which greatly limits its thermoelectric enhancement.To address this issue,CuBiTe_(2)alloying is introduced to increase the formation energy of Ge vacancies in GeTe,thereby inhibiting the high carrier concentration.The carrier scattering caused by the electronegativity difference between different elements is suppressed due to the similar electronegativity of Cu and Ge atoms.A relatively high hole mobility is obtained,which ultimately leads to a high power factor.Additionally,by introducing Se as an alloying element at the anionic site in GeTe,dense point defects with mass/strainfield fluctuations are induced.This contributes to the strengthening of phonon scattering,thereby reducing the lattice thermal conductivity from 1.44 W·m^(-1)·K^(-1)for pristine GeTe to 0.28 W·m^(-1)·K^(-1)for Ge_(0.95)Cu_(0.05)Bi_(0.05)Te_(0.9)Se_(0.15)compound at 623 K.展开更多
The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied un...The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.展开更多
The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented...The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.展开更多
Conjugated polymers attracted much attention in the past few decades due to their wide applications in various optoelectronic devices and circuits. The charge transport process in conjugated polymers mainly occurs in ...Conjugated polymers attracted much attention in the past few decades due to their wide applications in various optoelectronic devices and circuits. The charge transport process in conjugated polymers mainly occurs in the intrachain and interchain parts, where the interchain charge transport is generally slower than intrachain transport and may slow down the whole charge transport properties. Aiming at this issue, herein we employ semiconducting single-walled carbon nanotubes(s-SWNTs) as efficient charge-transporting jointing channels between conjugated polymer chains for improving the charge transport performance. Taking the typical conjugated polymer, ploy-N-alkyl-diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene(PDPP-TT) as an example, polymer thin film transistors(PTFTs) based on the optimized blended films of PDPP-TT/s-SWNTs exhibit an obviously increasing device performance compared with the devices based on pure PDPP-TT films, with the hole and electron mobility increased from 2.32 to 12.32 cm^2 V^-1 s^-1 and from 2.02 to 5.77 cm^2 V^-1 s^-1, respectively. This result suggests the importance of forming continuous conducting channels in conjugated polymer thin films, which can also be extended to other polymeric electronic and optoelectronic devices to promote their potential applications in large-area, low-cost and high performance polymeric electronic devices and circuits.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 51402013)the China Postdoctoral Science Foundation (No. 2015T80037)the Fundamental Research Funds for Central Universities (No. FRF-TP-15-052A2)
文摘The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.
文摘The general expressions based on the Fermi distribution of the free charge carriers are applied for estimation of the transport characteristics in superconductors at the temperature well above the superconducting phase transition temperature TC. The Hall-effect experimental results in the normal state of the superconductor YBa2Cu3O7-δ are not finally explained. On the ground of the randomly moving charge carriers, the transport characteristics of the randomly moving charge carriers for both single type and two types of the charge carriers are presented. The particular attention has been pointed to the Hall-effect measurement results of the high-TC superconductor YBa2Cu3O7-δ. It is at the first time derived the Hall coefficient expression for two type of highly degenerate charge carriers (electrons and holes) on the ground of the randomly moving charge carriers at the Fermi surface. It is shown that the Hall coefficient and other transport characteristics are determined by the ratio between the electron-like and hole-like densities of states at the Fermi surface.
基金financially supported by the National Key Research and Development Program of China(No.2018YFA0702100)National Natural Science Foundation of China(No.U21A2054)the support from Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou(No.202255464)。
文摘TheⅣ-Ⅵcompound GeTe is considered as a promising alternative to the toxic PbTe for high-efficiency mid-temperature thermoelectric applications.However,pristine GeTe suffers from a high concentration of Ge vacancies,resulting in an excessively high hole concentration(>1×10^(21)cm^(-3)),which greatly limits its thermoelectric enhancement.To address this issue,CuBiTe_(2)alloying is introduced to increase the formation energy of Ge vacancies in GeTe,thereby inhibiting the high carrier concentration.The carrier scattering caused by the electronegativity difference between different elements is suppressed due to the similar electronegativity of Cu and Ge atoms.A relatively high hole mobility is obtained,which ultimately leads to a high power factor.Additionally,by introducing Se as an alloying element at the anionic site in GeTe,dense point defects with mass/strainfield fluctuations are induced.This contributes to the strengthening of phonon scattering,thereby reducing the lattice thermal conductivity from 1.44 W·m^(-1)·K^(-1)for pristine GeTe to 0.28 W·m^(-1)·K^(-1)for Ge_(0.95)Cu_(0.05)Bi_(0.05)Te_(0.9)Se_(0.15)compound at 623 K.
文摘The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.
文摘The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.
基金financial support from the Ministry of Science and Technology of China (2017YFA0204503 and 2016YFB0401100)the National Natural Science Foundation of China (51725304, 51633006, 51703159, 51733004 and 21875259)+1 种基金the Strategic Priority Research Program (XDB12030300)the Chinese Academy of Sciences and the National Program for Support of Top-notch Young Professionals
文摘Conjugated polymers attracted much attention in the past few decades due to their wide applications in various optoelectronic devices and circuits. The charge transport process in conjugated polymers mainly occurs in the intrachain and interchain parts, where the interchain charge transport is generally slower than intrachain transport and may slow down the whole charge transport properties. Aiming at this issue, herein we employ semiconducting single-walled carbon nanotubes(s-SWNTs) as efficient charge-transporting jointing channels between conjugated polymer chains for improving the charge transport performance. Taking the typical conjugated polymer, ploy-N-alkyl-diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene(PDPP-TT) as an example, polymer thin film transistors(PTFTs) based on the optimized blended films of PDPP-TT/s-SWNTs exhibit an obviously increasing device performance compared with the devices based on pure PDPP-TT films, with the hole and electron mobility increased from 2.32 to 12.32 cm^2 V^-1 s^-1 and from 2.02 to 5.77 cm^2 V^-1 s^-1, respectively. This result suggests the importance of forming continuous conducting channels in conjugated polymer thin films, which can also be extended to other polymeric electronic and optoelectronic devices to promote their potential applications in large-area, low-cost and high performance polymeric electronic devices and circuits.
