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PARAMETRIC MATCHING SELECTION OF MULTI-MEDIUM COUPLING SHOCK ABSORBER
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作者 YANG Ping DING Jianning YANG Jichang LI Changsheng FAN Zhen LIN Zhiyong 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2006年第1期124-127,共4页
To achieve the dual demand of resisting violent impact and attenuating vibration in vibration-impact-safety of protection for precision equipment such as MEMS packaging system, a theo- retical mathematical model of mu... To achieve the dual demand of resisting violent impact and attenuating vibration in vibration-impact-safety of protection for precision equipment such as MEMS packaging system, a theo- retical mathematical model of multi-medium coupling shock absorber is presented. The coupling of quadratic damping, linear damping, Coulomb damping and nonlinear spring are considered in the model. The approximate theoretical calculating formulae are deduced by introducing transformation-tactics. The contrasts between the analytical results and numerical integration results are developed. The resisting impact characteristics of the model are also analyzed in progress. In the meantime, the optimum model of the parameters matching selection for design of the shock absorber is built. The example design is illustrated to confirm the validity of the modeling method and the theoretical solution. 展开更多
关键词 Multi-damping medium Shock absorber Model Parametric matching selection Resisting impact and attenuating vibration
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A 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier
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作者 Shizhe Wei Haifeng Wu +1 位作者 Qian Lin Mingzhe Zhang 《Journal of Semiconductors》 EI CAS CSCD 2020年第6期44-47,共4页
In this letter,we design and analyze 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier(PA)in 0.18μm CMOS technology.By using two-stage quadruple-stacked topology and feedback technology,the proposed PA... In this letter,we design and analyze 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier(PA)in 0.18μm CMOS technology.By using two-stage quadruple-stacked topology and feedback technology,the proposed PA realizes an ultra-wideband CMOS PA in a small chip area.Wideband impedance matching is achieved with smaller chip dimension.The effects of feedback resistors on the RF performance are also discussed for this stacked-FET PA.The PA shows measured input return loss(<–10.8 dB)and output return loss(<–9.6 dB)in the entire bandwidth.A saturated output power of 22 dBm with maximum 20%power added efficiency(PAE)is also measured with the drain voltage at 5 V.The chip size is 0.44 mm^2 including all pads. 展开更多
关键词 power amplifier CMOS stacked multi-octave resistive matching
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