In the present study,a novel method of surface finish improvement is proposed using shot blasting of soda lime(SBSL)beads on the Mg-AZ31 alloy.The effect of the soda blasting process parameters,such as blast pressure,...In the present study,a novel method of surface finish improvement is proposed using shot blasting of soda lime(SBSL)beads on the Mg-AZ31 alloy.The effect of the soda blasting process parameters,such as blast pressure,stand-off distance,and blast duration,have been studied in-response of material removal rate(MRR)and surface roughness(SR)and corresponding statistical models have been obtained.The multi-objective optimization has also been performed to obtain parameters for maximum MRR and minimum SR.The corrosion behavior of the treated specimens has been performed to study their in-vitro biodegradability in simulated body fluid(SBF)for 1,3,7,10,15,and 21 days.The wettability study of the SBSL treated samples has been investigated using sessile drop methodology.Further,cell adhesion test has also been performed to study the biocompatibility characteristics of the SBSL treated samples using Huh7 liver cell lines.Based on obtained quantitative data as well as scanning electron microscopy analysis of treated samples,the SBSL treatment of the AZ31 alloy has been found highly useful in producing biocompatibility surfaces along with desirable morphological features.展开更多
The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a...The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a peak of frictional coefficient at the early stage of scratch, and increasing the vertical force will result in the increase of peak value correspondingly. The fluctuation phenomenon of frictional coefficient is generated at high vertical force. The lateral forces show the apparent twofold and threefold symmetries on （110） and （111） planes, respectively. To obtain high surface quality, low polishing pressure and hard direction （〈 T10 〉 directions on （110） plane and 〈 112 〉 directions on （111） plane） should be selected, and to achieve high material removal rate, high polishing pressure and soft direction （〈001〉 directions on （110） plane and 〈 121 〉 directions on （111） plane） should be selected.展开更多
Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material...Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology.展开更多
文摘In the present study,a novel method of surface finish improvement is proposed using shot blasting of soda lime(SBSL)beads on the Mg-AZ31 alloy.The effect of the soda blasting process parameters,such as blast pressure,stand-off distance,and blast duration,have been studied in-response of material removal rate(MRR)and surface roughness(SR)and corresponding statistical models have been obtained.The multi-objective optimization has also been performed to obtain parameters for maximum MRR and minimum SR.The corrosion behavior of the treated specimens has been performed to study their in-vitro biodegradability in simulated body fluid(SBF)for 1,3,7,10,15,and 21 days.The wettability study of the SBSL treated samples has been investigated using sessile drop methodology.Further,cell adhesion test has also been performed to study the biocompatibility characteristics of the SBSL treated samples using Huh7 liver cell lines.Based on obtained quantitative data as well as scanning electron microscopy analysis of treated samples,the SBSL treatment of the AZ31 alloy has been found highly useful in producing biocompatibility surfaces along with desirable morphological features.
基金supported by the Key Project of the National Natural Science Foundation of China (No. 50535020)the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University (No. SKLSP200902)
文摘The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a peak of frictional coefficient at the early stage of scratch, and increasing the vertical force will result in the increase of peak value correspondingly. The fluctuation phenomenon of frictional coefficient is generated at high vertical force. The lateral forces show the apparent twofold and threefold symmetries on （110） and （111） planes, respectively. To obtain high surface quality, low polishing pressure and hard direction （〈 T10 〉 directions on （110） plane and 〈 112 〉 directions on （111） plane） should be selected, and to achieve high material removal rate, high polishing pressure and soft direction （〈001〉 directions on （110） plane and 〈 121 〉 directions on （111） plane） should be selected.
基金This work was supported by the National Natural Science Foundation of China(Nos.51865030 and 52165025).
文摘Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology.
