Effects of helium implantation on silicon carbide（SiC） and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were im...Effects of helium implantation on silicon carbide（SiC） and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He＋ions of 20 ke V and 100 ke V at different temperatures and different fluences. The He^＋ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy（FESEM）, atomic force microscopy（AFM）, and transmission electron microscopy（TEM）.展开更多
基金supported by the ITER-National Magnetic Confinement Fusion Program,China(Grant Nos.2010GB109000,2011GB108009,and 2014GB123000)the National Natural Science Foundation of China(Grant No.11075119)
文摘Effects of helium implantation on silicon carbide（SiC） and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He＋ions of 20 ke V and 100 ke V at different temperatures and different fluences. The He^＋ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy（FESEM）, atomic force microscopy（AFM）, and transmission electron microscopy（TEM）.
