Graphene applications in electronic and optoelectronic devices and circuits

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.

Study of “Radiation Effects of Nuclear High Energy Particles” on Electronic Circuits and Methods to Reduce Its Destructive Effects

This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.

Fault Diagnosis of Power Electronic Circuits Based on Adaptive Simulated Annealing Particle Swarm Optimization

In the field of energy conversion,the increasing attention on power electronic equipment is fault detection and diagnosis.A power electronic circuit is an essential part of a power electronic system.The state of its internal components affects the performance of the system.The stability and reliability of an energy system can be improved by studying the fault diagnosis of power electronic circuits.Therefore,an algorithm based on adaptive simulated annealing particle swarm optimization(ASAPSO)was used in the present study to optimize a backpropagation(BP)neural network employed for the online fault diagnosis of a power electronic circuit.We built a circuit simulation model in MATLAB to obtain its DC output voltage.Using Fourier analysis,we extracted fault features.These were normalized as training samples and input to an unoptimized BP neural network and BP neural networks optimized by particle swarm optimization(PSO)and the ASAPSO algorithm.The accuracy of fault diagnosis was compared for the three networks.The simulation results demonstrate that a BP neural network optimized with the ASAPSO algorithm has higher fault diagnosis accuracy,better reliability,and adaptability and can more effectively diagnose and locate faults in power electronic circuits.

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some properties of a printed circuit board (PCB) by exposing it to the plasma. The device consists of cylindrical discharge chamber with movable parallel circular copper electrodes (cathode and anode) fixed inside it. The distance between them is 12 cm. This plasma experiment works in a low-pressure range (0.15 - 0.70 Torr) for Ar gas with a maximum DC power supply of 200 W. The Paschen curves and electrical plasma parameters (current, volt, power, resistance) characterized to the plasma have been measured and calculated at each cm between the two electrodes. Besides, the electron temperature and ion density are obtained at different radial distances using a double Langmuir probe. The electron temperature (KTe) was kept stable in range 6.58 to 10.44 eV;whereas the ion density (ni) was in range from 0.91 × 1010 cm−3 to 1.79 × 1010 cm−3. A digital optical microscope (800×) was employed to draw a comparison between the pre-and after effect of exposure to plasma on the shaping of the circuit layout. The experimental results show that the electrical conductivity increased after plasma exposure, also an improvement in the adhesion force in the Cu foil surface. A significant increase in the conductivity can be directly related to the position of the sample surfaces as well as to the time of exposure. This shows the importance of the obtained results in developing the PCBs manufacturing that uses in different microelectronics devices like those onboard of space vehicles.

Introduction on Carbon Nanotubes (CNT) and Its Applications in Electronic Circuits

Carbon Nanotubes(CNT)in nanotechnology field are legendary for its strength and chemical inertness.Technically,we can alter carbon nanotubes based on our necessities and requirements such as single layered nanotube,double layered nanotube,multi layered nanotube etc.In this paper usage of carbon nanotubes in semiconductor devices such as nanomaterials,molecular dynamics of nanomaterials,heterojunctions using carbon nanotubes,diodes and Graphene Field Effect Transistor(GFET),its characteristics and data analysis are discussed.The major application of carbon nanotubes in electronic circuits is not limiting to improves the electrical and thermal conductivity due to its high stretchability feature and they also have a long life span and better durability over traditional electronic circuit’s materials.

Electronically Tunable Minimum Component Biquadratic Filters for Interface Circuits

In this paper, two new electronically tunable filter configurations are proposed. The proposed filters operate current-mode (CM), voltage-mode (VM), transimpedance-mode (TIM) and transadmittance-mode (TAM). The first configuration realizes second-order VM band-pass and TAM high-pass filter characteristics from the same configuration. The second one realizes second-order TIM band-pass and CM low-pass filter characteristics from the same configuration. They also use minimum number of electronic components (two capacitors and one active component namely;current controlled current difference transconductance amplifier). The workability of the proposed structures has been demonstrated by simulation results.

养殖RFID测温定位电子耳标研究——基于智慧农业区块链

首先,介绍了区块链和物联网技术在智慧农业应用的概念;然后,基于结构、温度传感器、RSSI定位和天线等多个模块实现了对测温定位电子耳标的设计;最后,为了验证该RFID测温定位电子耳标的性能,设计了一套放养羊群的养殖信息监测系统,对每只羊的实际位置和体温进行监测。测试结果表明:系统可以准确测量山羊的体温和位置,响应快,稳定性高,符合设计需求。

Electronics Workbench软件在电子线路中的应用

目前电子工程师们在从事电子产品设计时 ,利用计算机仿真软件对电路、信号与系统进行辅助分析和优化电路设计 ,可提高开发产品进程及设计人员的工作效率。结合实例介绍了 Electronics Workbench软件的使用方法及对实际电子线路进行仿真的程序。

The Research and Application of the Anti-Interference Techniques of Electronic Device in Power System

This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[

电子工作台软件Electronics Workbench及其应用初探

对加拿大 Ｉｎｔｅｒａｃｔｉｖｅ Ｉｍ ａｇｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｌｔｄ．的电路 Ｃ Ａ Ｄ软件 Ｅｌｅｃｔｒｏｎｉｃｓ Ｗｏｒｋｂｅｎｃｈ 的主要功能、特点作了简要介绍，同时探讨了该软件在电子电路设计。

运用Electronics Workbench软件仿真分析电子电路

本文介绍了ＥｌｅｃｔｒｏｎｉｃｓＷｏｒｋｂｅｎｃｈ 仿真软件的基本功能特点和组成。

应用Electronics Workbench软件仿真电子线路实验

给出了在 Windows98和 NT4环境下 ,Electronics Workbench(电子工作台 )软件的基本功能和使用方法 ,以及应用该软件仿真电子线路实验的步骤和方法 .使用该方法的教学效果表明 。

Review of Electronic Speckle Pattern Interferometry(ESPI) for Three Dimensional Displacement Measurement

Three dimensional（3D） displacements, which can be translated further into 3D strain, are key parameters tor design, manufacturing and quality control. Using different optical setups, phase-shift methods, and algorithms, several different 3D electronic speckle pattern interferometry（ESPl） systems for displacement and strain measurements have been achieved and commercialized. This paper provides a review of the recent developments in ESPI systems for 3D displacement and strain measurement. After an overview of the fundamentals of ESP! theory, temporal phase-shift, and spatial phase-shift techniques, 3D deformation measurements by the temporal phase-shift ESPI system, which is suited well for static measurement, and by the spatial phase-shift ESPI system, which is particularly useful for dynamic measurement, are discussed. For each method, the basic theory, a brief derivation and different optical layouts are presented. The state of art application, potential and limitation of the ESPI systems are shown and demonstrated.

Readout electronics for a high-resolution soft X-ray spectrometer based on silicon drift detector

The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector(SDD),for precisely measuring the energy and arrival time of X-ray photons is presented in this paper.The system mainly consists of two parts,i.e.,an analog electronics section(including a pre-amplifier,a signal shaper and filter,a constant fraction timing circuit,and a peak hold circuit)and a digital electronics section(including an ADC and a TDC).Test results with X-ray sources show that an energy dynamic range of 1-10 keV with an integral nonlinearity of less than 0.1%can be achieved,and the energy resolution is better than 160 eV @ 5.9 keV FWHM.Using a waveform generator,test results also indicate that time resolution of the electronics system is about 3.7 ns,which is much less than the transit time spread of SDD(<100 ns)and satisfies the requirements of future applications.

Influence of an Electronic Field on the GMI Effect of Fe-based Nanocrystalline Microwire

In this work, a Fe-based nanocrystalline microwire of 20 mm in length and 25 μm in diameter was placed in the center of a 316 stainless steel pipe. The pipe was 500 μm in diameter and a little shorter than the microwire. A series of voltages were applied on the pipe to study the influence of the electrical field on the Giant-Magneto-Impedance(GMI) effect of the microwire. Experimental results showed that the electronic field between the wire and the pipe reduced the hysteresis of the GMI effect. The results were explained based on equivalent circuit and eddy current consumptions analysis.

Prototype of the readout electronics for the RICH PID detector in the STCF

The ring imaging Cherenkov(RICH) detector for particle identification(PID) is being evaluated for the future super tau-charm facility(STCF) complex. In this work, the prototype readout electronics for the RICH PID detector is designed. The prototype RICH PID detector is based on a thick gas electron multiplier combined with a micromegas detector for Cherenkov light detection. Considering that there will be a large number(~ 690,000) of detector channels in future RICH detector, the readout electronics faces many challenges to precisely measuring time and charge information, such as reducing the noise,increasing density, and improving precision. The requirements of the readout electronics are explored, the downselection of the ASICs is made and thus a prototype readout electronics is designed and implemented. Tests are also conducted to evaluate the performance of the prototype readout electronics, and the results indicate that the time resolution is better than ~ 1 ns(RMS) when the input charge is greater than ~ 12 fC based on the APV25chip, while the time resolution is better than ~ 1 ns(RMS) at an input charge of over ~ 48 fC based on the AGET and STCF ASIC chips, and the equivalent noise charge is better than ~ 0.5 fC(RMS) @ 20 pF based on the three ASICs. The test results indicate that the prototype readout electronics design meets the requirement of the future RICH PID detector and thus provides a reference for future engineering.

General Consideration of Measuring System for Operational Test of Thyristor Valves of Ultra High Voltage DC Power Transmission

Thyristor valve is one of the key equipments for ultra high voltage direct current(UHVDC) power transmission projects.Before being installed on site,they need to be tested in a laboratory in order to verify their operational performance to satisfy the technical specification of project related.Test facilities for operational tests of thyristor valves are supposed to enable to undertake more severe electrical stresses than those being applied in the thyristor valves under test(test objects).On the other hand,the stresses applied into the test objects are neither higher nor lower than specified by the specification,because inappropriate stresses applied would result in incorrect evaluation of performance on the test objects,more seriously,would cuase the damage of test objects with expensive cost losing.Generally,the process of operational tests is complicated and performed in a complex synthetic test circuit(hereafter as STC),where there are a lot of sensors used for measuring,monitoring and protection on line to ensure that the test circuit functions in good condition.Therefore,the measuring systems embedded play a core role in STC,acting like "eyes".Based on the first project of building up a STC in China,experience of planning measuring systems is summarized so as to be referenced by related engineers.

Design and development of multi-channel front end electronics based on dual-polarity charge-to-digital converter for SiPM detector applications

With the development of silicon photomultiplier(SiPM)technology,front-end electronics for SiPM signal processing have been highly sought after in various fields.A compact 64-channel front-end electronics(FEE)system achieved by fieldprogrammable gate array-based charge-to-digital converter(FPGA-QDC)technology was built and developed.The FEE consists of an analog board and FPGA board.The analog board incorporates commercial amplifiers,resistors,and capacitors.The FPGA board is composed of a low-cost FPGA.The electronics performance of the FEE was evaluated in terms of noise,linearity,and uniformity.A positron emission tomography(PET)detector with three different readout configurations was designed to validate the readout capability of the FEE for SiPM-based detectors.The PET detector was made of a 15×15 lutetium–yttrium oxyorthosilicate(LYSO)crystal array directly coupled with a SiPM array detector.The experimental results show that FEE can process dual-polarity charge signals from the SiPM detectors.In addition,it shows a good energy resolution for 511-keV gamma photons under the dual-end readout for the LYSO crystal array irradiated by a Na-22 source.Overall,the FEE based on FPGA-QDC shows promise for application in SiPM-based radiation detectors.

Plasma Electron Density Measuring and Processing on the J-TEXT Tokamak

Plasma electron density is one of the most fundamental parameters in the study of tokamak plasma physics.The method of plasma electron density measuring and processing on the Joint Texas Experimental Tokamak(J-TEXT) was presented in this paper.The principle of the plasma electron density measuring by hydrogen cyanide(HCN) laser interferometer was introduced.Room temperature triglycine sulface(TGS) detector was used to obtain the beat signal of HCN,and phase difference was measured by high-speed acquisition card DAQ2010.Based on the signal characteristics,a specific HCN processing algorithm was designed to eliminate the baseline offset accurately and process overturns of HCN signals effectively.As a result,plasma electron density with high accuracy and low noise has been obtained during the J-TEXT tokamak experiment.

10 Gb/s Optical Interconnection on Flexible Optical Waveguide in Electronic Printed Circuit Board

In this paper, we proposed 10 Gb/s transmission using 4-channel polymer waveguides on the optical electronic printed circuit board. It was simulated by the ray tracing method for tolerance study of optical interconnection and fabrication. In order for easy fabrication and high position accuracy, the polymer waveguides were forming silver coated 45° reflective mirrors by dicing method and e-beam deposition for 90° light beam turning. The coupling loss was demonstrated in different polishing grit sizes. The optical interconnection in board-embed 4-channel flexible waveguides was demonstrated with a low propagation loss of 0.1 dB/cm and a clear eye diagram at 2.5 Gb/s data rate per channel.