Solution-based metal induced crystallization of a-Si

This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

Optimizing Structure and Processes of Nickel Induced Lateral Crystallization

The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.

基于MIC多晶硅薄膜阳极的微腔有机发光器件

通过对溶液法金属诱导晶化多晶硅薄膜制备工艺的优化,制备出性能良好的P型掺杂多晶硅薄膜。厚度为50nm的MICP+-Poly-Si薄膜的方块电阻可降低至400Ω左右,其光学特性表现为在红光区域具有比较高的反射率和很小的吸收率,因此用它替代ITO用作红光OLED的阳极材料。由于此薄膜对可见光比较高的反射率和阴极铝对可见光的高反射性,使之形成了一定Q值的微腔效应。结果显示该器件的最大流明效率为5.88cd/A,比用ITO作阳极制备的OLED提高了57%。进一步优化器件结构,调整发光层在腔中的最佳位置,可以大大增强发光强度,从而可以实现发光强度高、单色性好的红色微腔有机电致发光显示器件。

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Polycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of PSC gettering process on the performances of solution-based metal induced crystallized （S-MIC） poly-Si materials and their thin film transistors （TFTs） are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSC during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSC gettering, the TFTs made with PSC gettering has a reduced gate induced leakage current.

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化 ( Metal Induced Crystallization,MIC)的方法研究了 a- Si/ Ni的低温晶化 ,MIC晶化温度能降低到 44 0℃ .采用 XRD、Raman、SEM、XPS等分析手段研究了 Ni- MIC多晶硅薄膜的特性 ,对薄膜结构和组成进行了分析 。

诱导结晶工艺处理含铜废水

利用诱导结晶法处理浓度为20、50、100 mg.L-1的含铜废水,稳定运行后去除率皆能达到90%以上。实验连续运行145 d,定期取出结晶产物,通过SEM-EDS测试发现:结晶颗粒逐渐长大,其组成为碱式碳酸铜,分子式推测为CuCO3.Cu(OH)2.xH2O。本文还考察了沉淀剂种类、进药比、水力负荷以及停留时间对诱导结晶工艺处理含铜废水的影响。结果表明:当废水中[Cu2+]为20 mg.L-1时,最佳运行条件为:以碳酸钠为沉淀剂,进药比在1～2,水力负荷不高于25 m.h-1。停留时间对结晶工艺的影响不大。

铝诱导晶化法低温制备多晶硅薄膜

为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器，低温（＜６００℃）制备高质量多晶硅薄膜已成为研究热点．本文研究了一种低温制备多晶硅薄膜的新工艺：金属诱导非晶硅薄膜低温晶化法．在非晶硅薄膜上蒸镀金属铝薄膜，并光刻形成铝膜图形，而后于氮气保护中退火．利用光学显微镜和拉曼光谱等测试方法，研究了Ａｌ诱导下非晶硅薄膜的晶化过程，结果表明；在５６０℃退火６ｈ后；铝膜下的非晶硅已完全晶化，确定了所制备的是多晶硅薄膜．初步探讨了非晶硅薄膜金属诱导横向晶化机理．

二水硫酸钙结晶特性的影响研究

研究在湿法烟气脱硫工艺(WFGD)条件下二水硫酸钙的晶体生长规律及各因素对二水硫酸钙结晶特性的影响。研究表明,随着反应温度的升高,二水硫酸钙结晶诱导时间逐渐变短;金属杂质(铁、镁、铝离子)的加入影响二水硫酸钙晶体形态,降低了二水硫酸钙的脱水性能;添加相同摩尔浓度的金属杂质(铁、镁、铝离子),抑制结晶能力排序为Al3+>Fe3+>Mg2+,Mg2+对诱导时间的影响基本可以忽略。

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。采用 XRD、Raman、SEM和 XPS等手段研究了 Ni-MIC多晶硅薄膜的特性 ,分析了薄膜结构和组成 ,讨论了晶化过程的机理。

流态化诱导结晶沉积法处理无机废水的研究进展

介绍了流态化诱导结晶沉积法的原理,综述了该方法在无机废水处理中的应用研究,着重介绍其在重金属离子、磷酸盐、氟离子以及水的软化处理方面的研究进展。在重金属废水处理上的实际研究工作表明,该技术具有反应快、占地面积小、无污泥产生等优点,具有广泛应用前景。

诱导沉淀结晶技术在水处理中的应用

介绍了诱导沉淀结晶技术的原理,综述了该技术在水质软化及去除废水中的重金属离子、磷酸盐、氟离子方面的应用情况。实践表明,该技术结晶速度快、反应器容积小、固液分离快,具有较好的应用前景。

无害化诱导结晶新工艺处理重金属废水

研究采取以硅砂为晶核、利用诱导结晶方法和流化床技术联合处理重金属废水,重金属离子去除率可达99%,并且无污泥产生,不易产生二次污染。利用本法处理重金属废水可回收废水中的重金属,并可采用水泥固化达到重金属废水的无害化处理。因此,该项处理工艺在实际应用中有着广阔的前景。

Ni诱导非晶SiGe薄膜结晶

采用 Ni诱导结晶的方法在氧化硅衬底上制备多晶 Si Ge薄膜 .通过 X射线衍射 (XRD)、俄歇电子深度分布谱(AES)等测试方法对获得的多晶 Si Ge薄膜特性进行了表征 ,并对退火气氛中氧的存在对非晶 Si Ge结晶的影响进行了研究 .研究表明 Ni的参与可以显著降低非晶 Si Ge薄膜的结晶时间以及结晶温度 ;退火气氛中氧的存在对非晶 Si Ge结晶有明显阻碍作用 ;采用先在高纯 N2 (99.99% )气氛下快速热退火 (RTA)预处理 ,再在普通退火炉中长时间退火的方法可以明显改善非晶 Si

玻璃衬底上MIUC Poly-Si TFT显示驱动电路

以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUCpoly-SiTFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路.该行扫描电路工作电压为3.5-10V;当工作电压为5V、负载电容为22pf时,下降沿约为150ns,上升沿约为205ns,最高工作频率在1MHz以上;列驱动电路工作电压为3.5-8V;当工作电压为5V、负载电容为22pf时,上升沿约为200ns,信号衰减率为15%(64μs扫描周期),最高工作频率达到4MHz.将该MIUCpoly-SiTFT多晶硅行扫描、列驱动电路和有源选址电路集成到同一基板上,制备出象素数为80×RGB×60、动态显示效果良好的全集成型LCD屏样品.

电场辅助铝诱导晶化非晶硅薄膜

以氢气稀释的硅烷和氢气为反应气体,利用PECVD法先在玻璃衬底上生长非晶硅薄膜,然后利用磁控溅射法在非晶硅薄膜上镀制铝膜,最后将镀有铝膜的非晶硅薄膜样品置于快速热处理炉中,在外加电场辅助条件下,在氮气气氛下对薄膜样品进行退火制备多晶硅薄膜。本论文研究了不同外加电场强度和退火时间对非晶硅薄膜晶化的影响。利用XRD、SEM和Raman等测试方法对薄膜样品的晶相结构、表面形貌和晶化程度进行了表征。实验结果表明,在外加横向电场辅助铝诱导晶化的条件下,非晶硅薄膜在500℃低温下成功地转化成多晶硅薄膜,并且随着横向电场强度的增大以及退火时间的延长,薄膜的晶化程度增强,晶粒尺寸增大。

高性能金属诱导单向横向晶化多晶硅薄膜晶体管技术和应用

低温金属单向诱导横向晶化多晶硅薄膜晶体管技术与常规的固相晶化多晶硅薄膜晶体管相比 ,制作工艺简单 ,而且提高了场效应迁移率和漏极击穿电压 ,降低了漏电电流 ,改进了器件参数空间分布的均匀性。我们使用金属单向诱导横向晶化多晶硅薄膜晶体管技术 ,成功地制作了有源矩阵液晶显示器和有源矩阵有机发光二极管显示器。

直接形成不连续铜膜的硅金属诱导晶化

为发展低成本的多晶硅薄膜太阳能电池,采用磁控溅射技术,通过选择不同极性的表面和改变衬底温度,在普通钠钙玻璃衬底上直接形成了不连续的金属铜薄膜。以该薄膜作为诱导金属,在高温真空条件下对磁控溅射的非晶硅薄膜实现了固相金属诱导晶化。根据X射线衍射仪和拉曼位移光谱仪的测试结果,诱导晶化产生硅薄膜的晶粒尺寸约56 nm,晶化率达到84%。

用金属诱导准分子激光晶化法制备多晶硅薄膜

提出了一种新的晶化方法———金属诱导准分子激光晶化法(MI ELA)。该方法在制备多晶硅(p Si)薄膜中包括两个步骤:第一步是用镍金属诱导方法(MIC)通过热退火形成NiSi2;第二步是再通过准分子激光退火方法(ELA)晶化形成p Si。通过用XRD、Raman与SEM测试,研究了p Si的结晶性和表面形貌特征。研究发现,MI ELA方法制备的p Si与传统的ELA方法和MIC方法相比在形貌上不一样,而且从XRD的特征峰强度可以看出在结晶度上有进一步提高。这个结果源于用MIC方法形成的且与c Si晶格匹配的NiSi2在ELA中起到晶核的作用。这种晶化方法说明,在ELA中,晶粒生长不再仅仅依赖于熔融非晶硅和氧化物表面上残存的随机的固体a Si作为成核媒介。这种方法不但可以提供晶粒稳定生长条件,而且也可能使获得更大晶粒粒度的激光晶化能量展宽。