The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,i...The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.展开更多
The aim of this study is to evaluate the maximum and minimum distances between the model and the cast crown of three techniques using Scanning Electron Microscopy (SEM). Three technique groups were used for this study...The aim of this study is to evaluate the maximum and minimum distances between the model and the cast crown of three techniques using Scanning Electron Microscopy (SEM). Three technique groups were used for this study: group A (control), traditional manual wax patterns;group B, dipping wax patterns;group C, resin patterns made with CAD/CAM. For each group, 10 samples were made using the same model, and then metal cast. Marginal accuracies of the samples were evaluated by performing gap measurements using SEM with a magnification of 1200× (minimum distance). The data were statistically analyzed using the one-way analysis of variance (ANOVA) at the 0.05 significance level. The average (standard deviation) of the minimum distance [μm] was 22.5 (12.1), 9.9 (4.3), and 14.7 (6.6), in groups A, B, and C, respectively. The average standard deviation of gap area [μm2] was 21667.2 (3476.4), 9906.4 (1512.1), and 16048.8 (8123). In the minimum distance comparison, groups A and B (p = 0.006) showed statistically significant results. In the gap area comparison, there was no statistical significance among groups A, B, and C (p = 0.174). The marginal adaptations of all three techniques were within a reported clinically acceptable range of margin.展开更多
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences
文摘The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.
文摘The aim of this study is to evaluate the maximum and minimum distances between the model and the cast crown of three techniques using Scanning Electron Microscopy (SEM). Three technique groups were used for this study: group A (control), traditional manual wax patterns;group B, dipping wax patterns;group C, resin patterns made with CAD/CAM. For each group, 10 samples were made using the same model, and then metal cast. Marginal accuracies of the samples were evaluated by performing gap measurements using SEM with a magnification of 1200× (minimum distance). The data were statistically analyzed using the one-way analysis of variance (ANOVA) at the 0.05 significance level. The average (standard deviation) of the minimum distance [μm] was 22.5 (12.1), 9.9 (4.3), and 14.7 (6.6), in groups A, B, and C, respectively. The average standard deviation of gap area [μm2] was 21667.2 (3476.4), 9906.4 (1512.1), and 16048.8 (8123). In the minimum distance comparison, groups A and B (p = 0.006) showed statistically significant results. In the gap area comparison, there was no statistical significance among groups A, B, and C (p = 0.174). The marginal adaptations of all three techniques were within a reported clinically acceptable range of margin.
