A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates

By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.

Synthesis of α-Selenoesters By Reactions of α-Bromoesters With Diselenides Promoted By Metallic Tin

α-Bromoesters can react with diselenides by metallic tin in THF to give α-selenoesters in moderate to good yields.

STUDIES ON THE PROPERTIES OF SCHIFF BASE TYPE ARYLMERCURY COMPOUNDS Ⅲ TRANSMETALLATION REACTION OF SCHIFF BASE TYPE ARYLMERCURY COMPOUNDS WITH METALLIC TIN

The transmetallation reaction of 4 Schiff base type arylmercury compounds with metallic tin has been carried out in refluxing xylene.It was found that the reaction proceeds in the same manner as that of chloro[2-(phenylazo)phenyl]mercury(Ⅱ) to give dichlorobisaryltin(Ⅳ).The ~1H NMR spectra of the products provide evidence for the presence of N→Sn intramolecular coordination.The formation of dichlorobisaryltin(Ⅳ)as a unique product probably arises from the N→Sn intramolecular coordination which results in the increasing of the stability of the molecule.

REGIOSELECTIVE ALLYLATION OF THE TERMINAL EPOXIDES BY ALLYL BROMIDE AND METALLIC ZINC OR TIN

Allylation of terminal epoxides(1)to give the homoallylic alcohols(2)and bishomoallylic alcohols(3)can be carried out successfully by allyl bromide and metallic zinc or tin.The effect of substituents on epoxides was studied.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.

Behavior of Non-metallic Inclusions in Centrifugal Induction Electroslag Castings

In order to know the behavior of non-metallic inclusions in centrifugal induction electroslag castings (CIESC), non-metallic inclusions in 5CrMnMo and 4Cr5MoSiV1 were qualitatively and quantitatively analyzed. The largest size of inclusions in the casting and the thermodynamic possibility of TiN precipitation in steel were also calculated. The results show that sulfide inclusions are evenly distributed and the content is low. The amount of oxide inclusions in CIESC: 4Cr5MoSiV1 steel is close to the ESR steel and lower than that in the EAF steel, and there are some differences along radial direction. Nitride inclusions are fine and the diameter of the largest one is 3-1 mum. With the increase of the centrifugal machine's rotational speed, the ratio of round inclusions increases and the ratio of sharp inclusions decreases. According to the experiment and the calculation results, it is pointed out that the largest diameter of non-metallic inclusions in the CIESC 4Cr5MoSiV1 casting is only 6.6 mum, and [N%][Ti%] in 4Cr5MoSiV1 steel should be controlled less than 4.4x 10(-5) in order to further reduce the amount and size of TiN inclusions.

湖南某锡矿尾矿库周边土壤重金属污染特征及其来源分析

文章采用地质统计分析、污染指数法、地质累积指数法及潜在生态风险指数法对锡矿尾矿库周边表层土壤中Cd、Pb、As、Zn、Cu含量、分布及污染程度进行统计与分析,并采用相关性分析及主成分分析法对重金属来源进行定性描述。结果显示:(1)重金属平均值为Pb 398.70 mg/kg、Cd 5.97 mg/kg、As 1135.68 mg/kg、Cu 77.04 mg/kg、Zn 545.63 mg/kg,所有样品重金属含量均超过背景值;(2)尾矿库周边土壤为重污染,周边区域污染程度为西北>北侧>东侧>南侧>西侧,5种重金属均具有累积性,Igeo均值显示Cd>As>Pb>Zn>Cu;(3)地块综合潜在风险为极强风险,单项生态风险指数为Cd>As>Pb>Cu>Zn;(4)As、Pb、Cu、Zn存在极显著相关性,Cd与Zn极显著相关,与As、Pb显著相关。研究区土壤污染原因主要为干滩扬尘、地表漫流、废水泄露及渗漏,以及周边历史上尾砂及尾砂填埋影响等。

电火花沉积反应合成TiN增强Fe基金属陶瓷涂层

利用自制的电火花沉积充气密闭式保护装置和DZ-1400型电火花沉积/堆焊机,以工业纯钛TA2为电极,以工业纯氮为保护气和反应气,在45#钢基体试样表面制备出了厚度为60～80μm的TiN增强金属基陶瓷涂层。采用扫描电镜(SEM)观测了涂层微观结构和界面行为,分析了涂层形成机理,利用X射线仪(XRD)测定了涂层的物相组成,利用显微硬度仪测试了涂层的显微硬度,利用自制磨损试验机对比了涂层与淬火W18Cr4V高速钢的耐磨性。结果表明:涂层主要由TiN和FeTi两相组成,涂层组织致密、均匀、较连续,涂层与基体形成良好的冶金结合,涂层显微硬度HV高达15.88GPa,约是基体硬度的5倍,涂层具有较好的耐磨性。

SiO_2层晶化对TiN/SiO_2纳米多层膜结构和性能的影响

采用多靶磁控溅射法制备了一系列具有不同SiO2调制层厚的TiN/SiO2纳米多层膜.利用X射线衍射,X射线能量色散谱、扫描电子显微镜、高分辨电子显微镜和微力学探针表征和研究了多层膜的生长结构和力学性能.结果表明,具有适当厚度(0.45-0.9nm)的SiO2调制层,在溅射条件下通常为非晶态,在TiN层的模板作用下晶化并与TiN层共格外延生长,形成具有强烈(111)织构的超晶格柱状晶多层膜;与此相应,纳米多层膜产生了硬度和弹性模量异常增高的超硬效应(最高硬度达45GPa).随着SiO2层厚度的继续增加,SiO2层转变为非晶态,阻断了多层膜的共格外延生长,使纳米多层膜形成非晶SiO2层和纳米晶TiN层的多层结构,多层膜的硬度和弹性模量逐渐下降.

TiC/TiN复合陶瓷刀具材料的力学性能研究

以微米TiC和TiN为主要原料,以微米Cr、Ni以及Co为添加剂,采用真空热压烧结工艺制备了TiC/TiN复合陶瓷刀具材料。测试和分析了烧结样品的相对密度、弯曲强度、断裂韧性以及硬度性能。结果表明,当微米TiC添加量(质量百分数)为48%,TiN为16%、Cr为7.2%、Ni为21.6%以及Co为7.2%时,所制备的复合陶瓷刀具材料性能最佳,相对密度值为95.2%,弯曲强度575 MPa,断裂韧性为9.32 MPa·m1/2,硬度值为1288 kgf/mm2。

TC4合金表面激光熔覆NiCrBSiC+TiN粉末涂层的微观组织研究

采用CO2激光在TC4合金表面进行了NiCrBSiC+TiN粉末的熔覆试验,获得了连续均匀、无气孔和裂纹的熔覆层,利用EPMA、SEM和TEM分析了激光熔覆层的微观组织。结果表明,熔覆层的组织为在Ni基合金基体上均匀分布着TiN颗粒和针状的M23(CB)6相,TiN颗粒与Ni60合金结合紧密,界面干净光滑。熔覆层与TC4合金呈冶金结合,结合区的组织由柱状晶和树枝晶组成,基底热影响区为马氏体组织。

0Cr18Ni10Ti钢中TiN夹杂物的危害及应对措施

浅述了Ti N给0Cr18Ni10Ti等含Ti奥氏体不锈钢使用带来的影响,并对如何降低0Cr18Ni10Ti钢中Ti N数量及评级的措施进行了分析讨论。选择适宜的原辅料、冶炼工艺流程及工艺参数,可有效降低钢中Ti N;推广应用00Cr19Ni10N是解决Ti N危害的最有效手段。

TiN薄膜的循环制备和电学性质

用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了 TiN 薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了 TiN 薄膜的电学性质．结果表明,多次循环会引入界面而增大电阻率, 与薄膜成分和微结构分析的结果一致．得到了单循环的最优厚度以使样品电阻率最低．通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(Via)直径越小,TiN 薄膜对介窗电阻的影响越大．

锡冶炼烟尘中锡、锌、镉的分离回收工艺研究

研究了采用硫酸浸出—氧化水解脱砷—锌粉置换镉工艺分离回收锡冶炼烟尘中的锡、锌、镉,考察了各因素对分离回收效果的影响。结果表明:在初始硫酸浓度15%、液固体积质量比3∶1、浸出时间120min、浸出温度90℃条件下,Zn、Cd浸出率分别为93.25%、89.35%,Sn浸出率小于0.1%;浸出液在双氧水加入量为2%、控制终点pH为5时,除砷后夜中As质量浓度降至0.1mg/L;除砷后液在反应温度60℃、锌粉用量为理论量1.0倍、搅拌速度250r/min、反应时间30min条件下,可得到含镉95%以上的海绵镉。该工艺可实现锡冶炼烟尘中有价金属高效回收利用。

反应电火花沉积合成TiN金属基复合涂层

利用自制的反应电火花沉积合成系统,以TA_2为电极,以工业纯氮为保护气,在45#钢基体试件表面上原位反应合成了TiN金属基陶瓷复合涂层。利用X射线仪测定了涂层的物相组成,利用显微镜观察分析了涂层断面形貌及组织,利用硬度仪测试了涂层的显微硬度,利用磨损试验机对比了涂层与淬火W18Cr4V高速钢的耐磨性能。结果表明:涂层的平均维氏硬度为13230 MPa,涂层中TiN物相的平均晶粒大小为50 nm,涂层具有较好的耐磨性。

辐照对聚酰亚胺基板铜薄膜金属化TiN阻挡层的影响

采用物理气相沉积方法在聚酰亚胺基板上沉积Cu薄膜,利用TiN阻挡Cu元素向聚酰亚胺基板内部扩散。研究了在60Co-g射线辐照条件下,TiN阻挡层的阻挡效果,扫描俄歇微探针谱图分析表明:TiN层可以有效地阻挡Cu元素向聚酰亚胺基板内的扩散。当照射剂量大于2105 Gy后,TiN失去阻挡Cu元素扩散的效果。

高纯溅射靶材回收研究现状

高纯溅射靶材在晶圆代工企业和液晶面板企业作为耗材使用。高纯溅射靶材利用率低,一般平面靶利用率低于30%,旋转靶难超过70%,回收溅射后的残靶具有非常高的经济价值和环保意义。本文综述了贵金属、ITO、钛、钽、铝、铜等高纯靶材的回收研究现状,总结了靶材回收过程中面临的共同问题。目前在高纯靶材的残靶回收中还存在金属回收率低、回收的纯度不高、工艺流程长等问题需要攻克和改善,作者展望了开发较短的流程、环境友好的工艺、探索高价值的用途,是未来高纯残靶回收技术改进和发展的方向。

Bi_(2)S_(3)/SnS@PDA负极材料的制备及储钠性能

为解决硫化铋作为钠离子电池的负极材料在应用过程中体积膨胀应力大、导电性差等问题,以Bi/ZIF-8MOF材料作为前驱体,经过碳化、锡离子吸附、硫化和PDA包覆过程制备得到Bi_(2)S_(3)/SnS@PDA复合材料。采用SEM、XRD、XPS对样品的形貌及结构进行表征,通过电池充放电测试仪和电化学工作站测试了样品的电化学性能,并探讨了锡离子添加量对材料电化学性能的影响。结果表明:当Bi/ZIF-8与SnCl_(2)质量比为1∶1时,所制得的样品具有最佳的储钠性能。该样品在0.2 A/g下循环100次后,比容量高达862.3 mAh/g;在1 A/g下循环500次后,其比容量仍可保持723.9 mAh/g。样品良好的电化学性能归因于材料优化的化学成份和合理的结构设计。本研究为高性能钠电负极材料的设计提供了新策略,所制得BiSn双金属硫化物复合材料在储钠领域具有潜在的应用前景。

湖南界牌岭锡多金属矿区北侧地球化学异常特征及找矿潜力

界牌岭锡多金属矿外围研究区位于南岭中段成矿带之瑶岗仙W-Sn-Pb-Zn多金属矿田西南部的瑶岗仙—汝城复式背斜中,成矿地质条件优越。该地区发育有F、Be、Cu、Pb、Zn、Sn、Nb、Ta、Li、Rb等矿化。通过开展1∶10000土壤地球化学测量显示,研究区内Li、Rb、Be、Pb、Sn、F具明显浓集趋势,具备一定成矿潜力,研究区共圈定综合异常4处。通过异常查证及探矿工程揭露,认为界牌岭锡多金属矿外围研究区具良好的F、Sn、Li、Rb等稀有有色金属找矿潜力,为该地区下一步开展综合性地质找矿工作提供了依据。