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n-type Polycrystalhne Si Thick Films Deposited on SiN_x-coated Metallurgical Grade Si Substrates
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作者 Hongliang Zhang Liqiang Zhu +2 位作者 Liqiang Guo Yanghui Liu Qing Wan 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第1期65-69,共5页
For photovoltaic applications,low-cost SiNx-coated metallurgical grade silicon(MG-Si) wafers were used as substrates for polycrystalline silicon(poly-Si) thick films deposition at temperatures ranging from 640 to8... For photovoltaic applications,low-cost SiNx-coated metallurgical grade silicon(MG-Si) wafers were used as substrates for polycrystalline silicon(poly-Si) thick films deposition at temperatures ranging from 640 to880 ℃ by thermal chemical vapor deposition.X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ℃.To obtain n-type poly-Si,the as-deposited poly-Si films were annealed at 880 ℃ capped with a phosphosilicate glass.Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements.The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 1019cm-3and 68.1 cm2V-1s-1,respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications. 展开更多
关键词 Thermal chemical vapor deposition metallurgical gr
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