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Partial P-Type Metal Ions Doping Induced Variation of Both Crystal Structure and Oxygen Vacancy Within Cu/SnO_(2) Metastable Solid Solution Nanofibers for Highly Sensitive C_(2)H_(2) Sensor 被引量:1
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作者 WANG Ruifang YU Xi +2 位作者 LI Zhenyu CHEN Jingyu JIANG Tingting 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2021年第3期584-588,共5页
Partial P-type metal ions doping(PPMID)is an alternative method to further enhance the gas sensing performance of N-type metal oxides(NMOs)in contrast to that of P-N metal oxides heterojunctions,but the influences of ... Partial P-type metal ions doping(PPMID)is an alternative method to further enhance the gas sensing performance of N-type metal oxides(NMOs)in contrast to that of P-N metal oxides heterojunctions,but the influences of the introduction of PPMID on the grain size and oxygen vacancies of NMOs have been rarely investigated.Herein,a simple and effective route has been demonstrated to address this problem with Cu^(2+)-doped SnO_(2) metastable solid solution nanofibers(CSMSSNs)as model and C_(2)H_(2) as target molecule by combining electrospinning and calcination technique.It seems that the introduction of PPMID can also affect crystal structure and oxygen vacancies of NMOs,proven by combining X-ray diffraction(XRD)and X-ray photoelectron spectra(XPS).Thus,PPD,crystal structure and oxygen vacancies have been combined to clarify the enhanced sensing performance of Cu-doped SnO_(2) metastable solid solution nanofibers angainst C_(2)H_(2). 展开更多
关键词 P-Type doping P-N heterojunction Electrospinning metastable solid solution nanofiber C_(2)H_(2)sensor
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