Al改性MgB_(2)材料与金属界面特性及其超导性能研究

针对MgB_(2)超导材料用于液氢液位传感器的临界转变温度与液氢液化温度差异大和原始粉末与金属护套界面反应导致测量控制难的问题,研究了降低MgB_(2)临界转变温度的改性技术,以及改性后粉末与金属护套Fe、Monel反应产物及退火温度对其超导转变宽度的影响。结果表明,当掺杂量x=0.15时,Mg_(1-x)Al_xB_(2)多晶样品的临界转变温度为30 K左右,满足液氢液位传感器使用环境。金属护套Fe、Monel与前驱体粉末Mg、Al之间都有不同程度的扩散界面发生,Fe金属护套样品扩散层厚度较小,大约为25μm,更适合于Al掺杂MgB2超导线材的制备护套材料。不同退火温度下的带金属护套的Fe、Monel改性MgB_(2)样品仍具有明显的超导转变,且超导转变温度满足液氢液位计使用环境。

Superconducting joints using reacted multifilament MgB_(2)wires:A technology toward cryogen-free MRI magnets

The development of superconducting joining technology for reacted magnesium diboride(MgB_(2))conductors remains a critical challenge for the advancement of cryogen-free MgB_(2)-based magnets for magnetic resonance imaging(MRI).Herein,the fabrication of superconducting joints using reacted carbon-doped multifilament MgB_(2)wires for MRI magnets is reported.To achieve successful superconducting joints,the powder-in-mold method was employed,which involved tuning the filament protection mechanism,the powder compaction pressure,and the heat treatment condition.The fabricated joints demonstrated clear superconducting-to-normal transitions in self-field,with effective magnetic field screening up to 0.5 T at 20 K.To evaluate the interface between one of the MgB_(2)filaments and the MgB_(2)bulk within the joint,serial sectioning was conducted for the first time in this type of superconducting joint.The serial sectioning revealed space formation at the interface,potentially caused by the volume shrinkage associated with the MgB_(2)formation or the combined effect of the volume shrinkage and the different thermal expansion coefficients of the MgB_(2)bulk,the filament,the mold,and the sealing material.These findings are expected to be pivotal in developing MgB_(2)superconducting joining technology for MRI magnet applications through interface engineering.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Effects of irradiation on superconducting properties of small-grained MgB_(2) thin films

We investigate the effect of ion irradiation on MgB_(2) thin films with small grains of approximately 122 nm and 140 nm.The flux pinning by grain boundaries is insignificant in the pristine MgB_(2) films due to good inter-grain connectivity,but is significantly improved after 120-keV Mn-ion irradiation.The scaling behavior of the flux pinning force density for the ion-irradiated MgB_(2) thin films with nanoscale grains demonstrates the predominance of pinning by grain boundaries,in contrast to the single-crystalline MgB_(2) films where normal point pinning was dominant after low-energy ion irradiation.These results suggest that irradiation-induced defects can accumulate near the grain boundaries in metallic MgB_(2) superconductors.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

溶胶-凝胶SiO_(2)减反膜的制备与光学性能研究

碱催化溶胶-凝胶多孔SiO_(2)减反膜具有优异的光学性能及抗激光损伤性能,是高功率激光装置中的重要组成部分,但其与光学元件之间的结合强度低,使得膜层易发生接触破坏。本研究以“神光II”高功率激光装置溶胶-凝胶多孔SiO_(2)减反膜为基础,通过提拉法在其表层涂覆致密的SiO_(2)薄层后得到机械强度提升的双层SiO_(2)减反膜(SiO_(2)-MTES),并与常用的单层氨固化SiO_(2)减反膜(SiO_(2)-HMDS)进行相关应用性能的综合比较。结果表明,涂覆SiO_(2)-MTES的熔石英在约800 nm处的峰值透过率大于99.6%,运用1-on-1激光损伤阈值测试方法测得该双层SiO_(2)减反膜的零几率激光损伤阈值为51.9 J/cm^(2)(1064 nm,9.1 ns),与涂覆SiO_(2)-HMDS的性能相当。同时,SiO_(2)-MTES膜层与水的接触角达到117.3°,且在相对湿度大于90%的高湿环境中膜层的透过率较稳定。多次擦拭实验结果表明SiO_(2)-MTES的耐摩擦机械强度明显优于SiO_(2)-HMDS,有效提升了膜层与光学元件之间的结合强度。

溶胶-凝胶法制备SiO_(2)减反射薄膜及其耐久性

目的增加太阳光在太阳能电池玻璃盖板的透过率,以期提高太阳能电池的转换效率。方法以正硅酸乙酯为原料、乙醇为溶剂、氨水为催化剂,采用碱催化溶胶-凝胶浸渍提拉法,在玻璃表面制备了SiO_(2)减反射薄膜,研究了溶胶中正硅酸乙酯与乙醇物质的量比和提拉镀膜速度对SiO_(2)薄膜光学性质的影响,分析了减反射薄膜的耐久性。结果碱性溶胶制备的SiO_(2)为非晶相,采用浸渍提拉法在玻璃表面制备的薄膜结构疏松,且存在微裂纹。采用正硅酸乙酯与乙醇物质的量比为1∶20、提拉速度为500μm/s及正硅酸乙酯与乙醇物质的量比为1∶30、提拉速度为1000μm/s制备的SiO_(2)薄膜,折射率分别为1.35和1.33,厚度分别为101.11、102.63nm,最大透过率分别高于未镀膜玻璃6.57%和6.94%,在400~1100nm波长范围内的平均透过率分别高于未镀膜玻璃5.01%和5.34%,表明该薄膜具有优异的减反射性能。玻璃表面制备SiO_(2)薄膜后,水接触角约为5°,具有超亲水性。将未镀膜玻璃及镀膜样品在实验室放置5个月后,采用正硅酸乙酯与乙醇物质的量比为1∶20、提拉速度为500μm/s及正硅酸乙酯与乙醇物质的量比为1∶30、提拉速度为1000μm/s的制备SiO_(2)薄膜的最大透过率分别高于未镀膜玻璃7.50%和6.71%,在400~1100 nm波长范围内的平均透过率分别高于未镀膜玻璃5.94%和5.59%,表明SiO_(2)薄膜的减反射性能具有较好的耐久性。结论采用碱催化溶胶-凝胶法在玻璃上制备的SiO_(2)减反射薄膜具有超亲水性及优异的减反射耐久性,在太阳能电池玻璃盖板上具有潜在的应用价值。

退火温度对Ta_(2)O_(5)薄膜光学和表面特性的影响

针对退火温度影响Ta_(2)O_(5)薄膜的光学和表面特性的问题,采用电子束蒸发技术在石英基底上制备了该薄膜,并将薄膜样品分别在200℃、400℃和600℃下进行退火。利用光谱仪测试了薄膜的透射率并反演计算得到薄膜的折射率和消光系数的变化规律,采用X射线衍射仪和原子力显微镜表征了薄膜的表面性能。研究表明,薄膜透射率曲线的峰值随退火温度升高而显著提升。随着退火温度升高,薄膜的折射率和消光系数均逐渐变大,表面粗糙度呈现下降的趋势,表面变得致密。退火前后薄膜均为非晶态。该研究为进一步提高Ta_(2)O_(5)薄膜的性能提供了试验数据。

5Cr油套管钢在含Cl^(-)的CO_(2)环境中的腐蚀特性研究

目的掌握油气井生产中CO_(2)腐蚀对油套管的影响规律,研究兼顾耐蚀性和经济性的5Cr油套管材料在含Cl^(-)的CO_(2)环境中不同时间下的腐蚀演变规律。方法采用XRD、XPS、SEM和EDS等技术分析5Cr油套管钢在不同时间下腐蚀产物膜的演变情况,利用丝束电极(WBE)和阻抗测试(EIS)技术对其腐蚀电化学行为进行研究。结果5Cr油套管钢腐蚀后期的平均腐蚀速率约为初期的1/2,在腐蚀14 d后,腐蚀产物膜中的Cr富集大于30%,Cr、Fe质量比达到较高水平,约为基体的15倍。随着腐蚀的进行,电荷传递电阻和产物膜覆盖引起的电阻增大,电化学反应阻力增大。在腐蚀前期具有局部不均匀性,随着腐蚀的进行,电极腐蚀电位有负移现象,最终分布区间为−0.59~−0.61 V,电极表面阳极电流区域大幅减少。结论在腐蚀时间延长的条件下,5Cr油套管钢腐蚀产物膜的致密性增加,电荷传递电阻呈变大趋势。在产物膜下的5Cr油套管钢区域,电流发生由阴极向阳极极性转变的现象,产物膜存在的孔隙使5Cr油套管钢基体金属被腐蚀,从而导致阳极电流的出现。表面局部腐蚀电位阳极区的形成和扩展使其有产生点蚀的倾向,但腐蚀产物逐渐沉积在点蚀坑内壁,形成了Cr富集的保护性表面层,原发生点蚀区域由原阳极活性点位转变为阴极区,对其发展起到了抑制作用。

基于共溅射ZnO/SnO_(2)异质结薄膜的气体传感器研究

采用射频磁控共溅射法在叉指电极上制备了ZnO/SnO_(2)n-n异质结复合薄膜,系统测试了其气敏特性,并分析了其气敏机理。结果表明,与ZnO薄膜和SnO_(2)薄膜气体传感器相比,ZnO/SnO_(2)异质结薄膜气体传感器具有更低的工作温度、更高的灵敏度以及更快的响应和恢复速度。ZnO/SnO_(2)异质结薄膜气体传感器对乙醇具有较好的选择性,最低检测体积分数为1×10^(-6),最佳工作温度为250℃;对1×10^(-4)乙醇气体的灵敏度可达18.4,响应时间和恢复时间分别为10 s和19 s。

纳米MoS_(2)固体薄膜制备及在钢领上的应用研究

为了减小纺织机械及器材专件的摩擦磨损,对比分析普通MoS_(2)油和脂与纳米MoS_(2)固体薄膜的润滑机理和特性,提出一种在钢领上采用真空化学气相沉积法合成纳米MoS_(2)固体薄膜的制备工艺;通过X射线衍射谱图和原子力显微镜,分析纳米MoS_(2)固体薄膜的组织结构及表面形貌,并对纳米MoS_(2)钢领进行镀铬镀氟渗杂复合膜处理。通过对比纳米MoS_(2)固体薄膜钢领与普通钢领纺纱质量,指出:纳米MoS_(2)固体薄膜具有优异的润滑性能,可以代替普通润滑油,达到纺织设备及器材专件少用油、不用油及无油自润滑的目的;纳米MoS_(2)的制备方法是制约其应用和发展的瓶颈;镀铬镀氟渗杂复合膜纳米MoS_(2)钢领在潮湿环境中不易生锈,较普通钢领的成纱质量好,值车工劳动强度小,钢领使用寿命延长。

二维MgB_(2)材料嵌钠/钾性质的理论研究

开发具有良好导电性、超快离子扩散能力和大存储容量的负极材料对于可充电离子电池来说具有重要意义,但仍具有挑战性。利用第一性原理计算,探讨了二维MgB_(2)作为碱金属(Na和K)离子电池负极材料的潜力。结果表明,MgB_(2)具有良好的结构稳定性和电化学性能。Na和K离子可以稳定地吸附在二维MgB 2上,且扩散势垒较低,分别为0.302和0.172 eV,表明其在超快充放电过程中具有较高的性能。更重要的是,二维MgB_(2)作为负极材料应用于钠离子和钾离子电池的最大存储容量分别为1167和584 mA·h/g。结果证明了二维MgB_(2)可以作为一种很有前途的负极材料应用于钠离子和钾离子电池。

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Mn^(2+)促进Bacillus altitudinis LZP02生物膜形成

【目的】Bacillus altitudinis LZP02是一株水稻根际促生菌(PGPR),能定殖于水稻根部,形成生物膜,且Mn^(2+)对LZP02菌株生物膜形成具有促进作用,但调控机制尚不明确,旨在探究Mn^(2+)对LZP02菌株生物膜形成的促进机制。【方法】采用结晶紫染色法进行生物膜定量分析、蒽酮-硫酸法测定胞外多糖产量、扫描电镜(SEM)观察LZP02菌株在水稻根际定殖情况、转录组学测序技术分析差异表达基因(DEGs)。【结果】添加4 mmol/L Mn^(2+)和8 mmol/L Mn^(2+)显著提高了LZP02菌株的成膜能力和胞外多糖产量,扫描电镜发现4 mmol/L Mn^(2+)和8 mmol/L Mn^(2+)提高了LZP02菌株在水稻根际的定殖能力,随着Mn^(2+)浓度的增加,DEGs数量显著增多,其主要富集在芽孢形成、毒素代谢途径和双组分系统中。1 mmol/L Mn^(2+)和4 mmol/L Mn^(2+)处理组发现skf操纵子中基因的表达均上调。扫描电镜观察发现在1 mmol/L Mn^(2+)和4 mmol/L Mn^(2+)处理组中LZP02菌体存在损伤。4 mmol/L Mn^(2+)处理组双组分系统中KinE和Spo0A基因均显著上调。【结论】Mn^(2+)通过“嗜食同类”和双组分系统中KinE基因激活Spo0A~P提高了菌株LZP02的成膜能力。

Recent progress in MgB_(2)superconducting joint technology

Magnesium diboride(MgB_(2))magnets have the potential to be the next-generation liquid-helium-free magnet for magnetic resonance imaging(MRI)application due to their relatively high superconducting transition temperature,high current density and low raw material cost compared with current commercial niobium-titanium(Nb-Ti)magnets.A typical superconducting magnet includes several coils.To produce an ultra-stable magnetic field for imaging in MRI,a superconducting electromagnet operating in a persistent mode is crucial.Superconducting coils of the electromagnet in MRI are short-circuited to operate in the persistent mode by connecting coils with superconducting joints.Per-sistent joints have been demonstrated for in-situ and ex-situ wires of both mono-and multi-filamentary structures,made predominantly by PIT techniques similar to those used in wire production.To realise further engagement of MgB_(2)in MRI applications,enhancing the performance of MgB_(2)superconducting joints is essential.This literature review summarises research and development on MgB_(2)superconducting joining technology.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

PBST/TiO_(2)/MgO复合薄膜的制备及性能

采用硅烷偶联剂γ-甲基丙烯酰氧基丙基三甲氧基硅烷(KH-570)对TiO_(2)/MgO NPs改性,采用溶液共混法制备了聚丁二酸-共-对苯二甲酸丁二醇酯(PBST)/TiO_(2)/MgO NPs纳米复合薄膜,并探讨了其在食品包装方面的应用。研究了改性TiO_(2)/MgO NPs对PBST基体机械、阻隔、抗菌和保鲜性能的影响。结果表明:复合膜的抗拉强度和水蒸汽透过率分别为29.39MPa和2.43×10^(-11) g·m/(m^(2)·s·Pa),相较PBST基体抗拉强度提高了24.32%,水蒸汽透过率降低了32.37%,且对金黄色葡萄球菌(S.aures)和大肠杆菌(E.coli)抑菌效果显著,分别达到98.7%和97.2%,并对圣女果有良好的保鲜性能,当改性后的TiO_(2)/MgO NPs质量含量为5%时,复合薄膜的性能最佳。

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

MoSi_(2)涂层高温富氧火焰冲刷失效机理研究

MoSi_(2)高温氧化时表面可生成保护性SiO_(2),有望用于推力室喷管内表面抗高温氧化涂层材料。然而,在1800℃及以上超高温火焰冲刷考核条件下,MoSi_(2)涂层发生快速损伤失效。为揭示MoSi_(2)涂层超高温冲刷失效机理,系统研究了推力室喷管不同位置涂层的氧化行为和损伤规律。结果表明:涂层损伤分为5个特征区域,分别为前缘、喉部、过渡段、中部和尾部,其中喉部发生整个涂层剥落,尾部涂层仍保持完整。MoSi_(2)涂层的主要失效形式为:超高温下MoSi_(2)涂层晶界快速氧化和氧化膜快速挥发,产生晶界裂纹,晶界裂纹合并形成网状、贯穿性、大尺度的纵向裂纹,将MoSi_(2)涂层分割成岛状区域。在热冲击载荷作用下,岛状区域MoSi_(2)涂层发生剥落失效。指出了MoSi_(2)涂层超高温冲刷腐蚀机理,为发展推力室喷管用长寿命MoSi_(2)超高温抗氧化涂层提供了理论方向。