钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量...钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量高被认为是较好的钠离子电池负极材料。本文使用简单水热法将Sb_(2)S_(3)与石墨烯复合,制备Sb_(2)S_(3)/石墨烯复合材料(Sb_(2)S_(3)/Gr)。结果表明:Sb_(2)S_(3)/Gr作为钠离子电池负极时,不仅表现出良好的电导率(3.5×10~(-3)S/cm)和钠离子扩散速率(4.853×10~(-13)cm~2/s),而且在0.5 A/g的电流密度下,首圈库伦效率为76.27%,经150次循环后的比容量稳定在488 m A·h/g,表现出较高的比容量。Sb_(2)S_(3)/Gr复合材料表现出了极大的应用潜力,为高性能钠离子电池负极材料的研发提供了一定的参考价值。展开更多
Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of f...Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.展开更多
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle...Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.展开更多
Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg...Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg_(3)Sb_(2)remains lower than 1,which is mainly attributed to its inferior electrical properties.Herein,we synergistically optimize the thermoelectric properties of p-type Mg_(3)Sb_(2)materials via codoping of Cd and Ag,which were synthesized by high-energy ball milling combined with hot pressing.It is found that Cd doping not only increases the carrier mobility of p-type Mg_(3)Sb_(2),but also diminishes its thermal conductivity(κ_(tot)),with Mg_(2.85)Cd_(0.5)Sb_(2)achieving a lowκtot value of∼0.67 W m^(−1)K^(−1)at room temperature.Further Ag doping elevates the carrier concentration,so that the power factor is optimized over the entire temperature range.Eventually,a peak zT of∼0.75 at 773 K and an excellent average zT of∼0.41 over 300−773 K are obtained in Mg_(2.82)Ag_(0.03)Cd_(0.5)Sb_(2),which are∼240%and∼490%higher than those of pristine Mg_(3.4)Sb_(2),respectively.This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg_(3)Sb_(2)by codoping Cd and Ag,which is beneficial to the future applications of Mg_(3)Sb_(2)-based thermoelectric materials.展开更多
通过探索一系列静电纺丝-硫化-煅烧等工艺参数,制备了N-掺杂碳纤维复合Sb_(2)S_(3)柔性电极材料(Sb_(2)S_(3)/NC),并采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X-射线光电子能谱(XPS)等对样品的晶体结构、微观...通过探索一系列静电纺丝-硫化-煅烧等工艺参数,制备了N-掺杂碳纤维复合Sb_(2)S_(3)柔性电极材料(Sb_(2)S_(3)/NC),并采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X-射线光电子能谱(XPS)等对样品的晶体结构、微观形貌及化学组成等进行了表征.制备的Sb_(2)S_(3)/NC纳米纤维具有优异的机械柔性和独特的复合结构.30 nm大小的Sb_(2)S_(3)纳米粒子相互连接成串珠状形貌,均匀地分散在N-掺杂碳纳米纤维中,有利于提高电子/离子的传输速率和电极材料的循环稳定性.Sb_(2)S_(3)/NC作为负极材料直接组装成的钠离子电池显示出优异的电化学性能,电流密度0.1和2.0 A g^(-1)下,比容量分别达到476.5和266.2 mAh g^(-1),0.1 A g^(-1)下循环280次后比容量保持为466.3 mAh g^(-1).展开更多
文摘钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量高被认为是较好的钠离子电池负极材料。本文使用简单水热法将Sb_(2)S_(3)与石墨烯复合,制备Sb_(2)S_(3)/石墨烯复合材料(Sb_(2)S_(3)/Gr)。结果表明:Sb_(2)S_(3)/Gr作为钠离子电池负极时,不仅表现出良好的电导率(3.5×10~(-3)S/cm)和钠离子扩散速率(4.853×10~(-13)cm~2/s),而且在0.5 A/g的电流密度下,首圈库伦效率为76.27%,经150次循环后的比容量稳定在488 m A·h/g,表现出较高的比容量。Sb_(2)S_(3)/Gr复合材料表现出了极大的应用潜力,为高性能钠离子电池负极材料的研发提供了一定的参考价值。
基金supported by the National Natural Science Foundation of China(Grant Nos.62104156,62074102)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515011256,2022A1515010979)China+1 种基金Science and Technology plan project of Shenzhen(Grant Nos.20220808165025003,20200812000347001)Chinasupported by the open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures,Guangxi University(Grant No.2022GXYSOF13)。
文摘Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。
文摘Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.
基金financially supported by the National Natural Science Foundation of China (Grant No. 52071041, 11874356, 51802034)supported by the Key Research Program of Frontier Sciences, CAS (Grant No.QYZDB-SSW-SLH016)
文摘Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg_(3)Sb_(2)remains lower than 1,which is mainly attributed to its inferior electrical properties.Herein,we synergistically optimize the thermoelectric properties of p-type Mg_(3)Sb_(2)materials via codoping of Cd and Ag,which were synthesized by high-energy ball milling combined with hot pressing.It is found that Cd doping not only increases the carrier mobility of p-type Mg_(3)Sb_(2),but also diminishes its thermal conductivity(κ_(tot)),with Mg_(2.85)Cd_(0.5)Sb_(2)achieving a lowκtot value of∼0.67 W m^(−1)K^(−1)at room temperature.Further Ag doping elevates the carrier concentration,so that the power factor is optimized over the entire temperature range.Eventually,a peak zT of∼0.75 at 773 K and an excellent average zT of∼0.41 over 300−773 K are obtained in Mg_(2.82)Ag_(0.03)Cd_(0.5)Sb_(2),which are∼240%and∼490%higher than those of pristine Mg_(3.4)Sb_(2),respectively.This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg_(3)Sb_(2)by codoping Cd and Ag,which is beneficial to the future applications of Mg_(3)Sb_(2)-based thermoelectric materials.
文摘通过探索一系列静电纺丝-硫化-煅烧等工艺参数,制备了N-掺杂碳纤维复合Sb_(2)S_(3)柔性电极材料(Sb_(2)S_(3)/NC),并采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X-射线光电子能谱(XPS)等对样品的晶体结构、微观形貌及化学组成等进行了表征.制备的Sb_(2)S_(3)/NC纳米纤维具有优异的机械柔性和独特的复合结构.30 nm大小的Sb_(2)S_(3)纳米粒子相互连接成串珠状形貌,均匀地分散在N-掺杂碳纳米纤维中,有利于提高电子/离子的传输速率和电极材料的循环稳定性.Sb_(2)S_(3)/NC作为负极材料直接组装成的钠离子电池显示出优异的电化学性能,电流密度0.1和2.0 A g^(-1)下,比容量分别达到476.5和266.2 mAh g^(-1),0.1 A g^(-1)下循环280次后比容量保持为466.3 mAh g^(-1).
