微控制单元(Micro Control Unit,MCU)集成电路技术具有强大的处理能力和可配置性,能有效支持复杂的数据处理和控制任务。智能仪器仪表对高精度、高可靠性及良好用户交互性的高标准需求,正驱动着相关人员探索先进的硬件电路设计方案,以...微控制单元(Micro Control Unit,MCU)集成电路技术具有强大的处理能力和可配置性,能有效支持复杂的数据处理和控制任务。智能仪器仪表对高精度、高可靠性及良好用户交互性的高标准需求,正驱动着相关人员探索先进的硬件电路设计方案,以适应日益严苛的工业应用标准。介绍基于MCU集成电路技术的智能仪器仪表的硬件电路设计与实现,阐述关键组件的选择与设计、印制电路板(Printed Circuit Board,PCB)布局设计等,并探讨硬件电路的实现,旨在为智能仪器仪表的设计提供一套完整的解决方案。展开更多
A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 1...A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.展开更多
文摘微控制单元(Micro Control Unit,MCU)集成电路技术具有强大的处理能力和可配置性,能有效支持复杂的数据处理和控制任务。智能仪器仪表对高精度、高可靠性及良好用户交互性的高标准需求,正驱动着相关人员探索先进的硬件电路设计方案,以适应日益严苛的工业应用标准。介绍基于MCU集成电路技术的智能仪器仪表的硬件电路设计与实现,阐述关键组件的选择与设计、印制电路板(Printed Circuit Board,PCB)布局设计等,并探讨硬件电路的实现,旨在为智能仪器仪表的设计提供一套完整的解决方案。
基金Project supported by the Second Stage of Brain Korea 21 Projects,Korea
文摘A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.
