The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is t...The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.展开更多
In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS- HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process...In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS- HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.展开更多
Organic semiconductors have gradually become the super stars on the stage of optoelectronic materials, due to their low cost, flexibility and solution processability. Numerous organic semiconductors, including small m...Organic semiconductors have gradually become the super stars on the stage of optoelectronic materials, due to their low cost, flexibility and solution processability. Numerous organic semiconductors, including small molecules and conjugated polymers, have been designed and synthesized to explore the potential of organic materials in optoelectronic industry. One-dimensional micro/nanostructures of organic semiconductors generally have more ordered packing structure with fewer defects compared with thin films, and are thus thought to show intrinsic carrier mobility of organic materials. Moreover, the packing structure in micro/nanostructures is clear and relatively easy to analyze, which makes these micro/nanostructures a good platform to study structure-property relationship. Therefore, design of suitable organic molecules to form micro-/nanostructures and methods to obtain ideal micro/nanostructures for functional devices will be fully discussed in this mini review. Finally, the perspective and opportunity of 1D micro/nanostructured organic materials based OFETs in the near future are also addressed.展开更多
Organic single crystals hold great promise for the development of organic semiconductor materials,because they could reveal the intrinsic electronic properties of these materials,providing high-performance electronic ...Organic single crystals hold great promise for the development of organic semiconductor materials,because they could reveal the intrinsic electronic properties of these materials,providing high-performance electronic devices and probing the structureproperty relationships.This article reviews the preparation methods for organic single crystals or crystalline micro/nanostructures,including vapor phase growth methods and solution-processed methods,and summarizes a few methods employed in the fabrication of field-effect transistors along with dozens of examples concerning both small molecules and polymers with high field-effect performance.展开更多
二维半导体过渡金属二硫属化物(transition metal dichalcogenide,TMD)具有独特的电学、光学和力学性能,在数字电路、光伏器件和能量存储等多个领域中具有巨大的应用潜力。通过表面掺杂控制TMD的电学性能为实现灵敏传感提供了有效的方...二维半导体过渡金属二硫属化物(transition metal dichalcogenide,TMD)具有独特的电学、光学和力学性能,在数字电路、光伏器件和能量存储等多个领域中具有巨大的应用潜力。通过表面掺杂控制TMD的电学性能为实现灵敏传感提供了有效的方法。本文开展了氧等离子体对二硫化钼(MoS_(2))掺杂特性的研究。首先,测试了MoS_(2)场效应晶体管(field-effect transistor,FET)的输运特性,发现氧等离子体处理对FET具有p型掺杂作用。随后,通过拉曼光谱研究了掺杂机制的成因,并证实了沟道表面类MoO_(3)缺陷的形成。最后,研究了经等离子体处理的晶体管的湿度传感特性,由于氧等离子体处理使得沟道对水分子的吸收中心增加,在潮湿环境下晶体管具有十分灵敏的响应特性,源漏电流值变化了约54%。这项工作不仅提供了一种调控TMD电学性能的简单方法,也展示了低维材料化学传感器的发展潜力。展开更多
We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons ...We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons and electron exchange-correlation. We find that, while the elec- tron scattering, the wave number along y direction and the electron exchange-correlation suppress the radiation power, but the thermal motion of electrons and the quantum effects can amplify the radiation power. The radiation frequency decreases with electron exchange-correlation con- tributions, but increases with quantum effects, motion of electrons. It is worth mentioning that radiation frequency. These properties could be plasma oscillations in nanometer FET. the wave number along y direction and thermal the electron scattering has scarce influence on the of great help to the realization of practical THz展开更多
In this paper,the Dyakonov-Shur instability of terahertz(THz)plasma waves has been analyzed in gated cylindrical field effect transistor(FET).In the cylindrical FET,the hydrodynamic equations in cylindrical coordinate...In this paper,the Dyakonov-Shur instability of terahertz(THz)plasma waves has been analyzed in gated cylindrical field effect transistor(FET).In the cylindrical FET,the hydrodynamic equations in cylindrical coordinates are used to describe the THz plasma wave in twodimensional electronic gas.The research results show that the oscillation frequency of the THz plasma wave is increased by increasing the component of wave in the circumferential direction,but in stability increment of the THz plasma wave are in creased by increasing the radius of channel.展开更多
The instability of terahertz(THz)plasma waves in two-dimensional(2D)quantum electron gas in a nanometer field effect transistor(FET)with asymmetrical boundary conditions has been investigated.We analyze THz plas...The instability of terahertz(THz)plasma waves in two-dimensional(2D)quantum electron gas in a nanometer field effect transistor(FET)with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas:gated and ungated regions.The results show that the radiation frequency and the increment(radiation power)in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.展开更多
After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, I...After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe suhstrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.展开更多
In this stud high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type cont...In this stud high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 〈 3, - 4, and 〉 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and oDtoelectronic alpplications.展开更多
回顾了半导体生化传感器 (ISFET 和 LA PS)在医学监测、免疫检测、免疫分析、D N A 杂交以及细胞培养等方面应用的进展。为使半导体器件适用于生化检测,对其中所采用的检测手段和取得的研究结果进行了分析。展望了通过与微流体网络相结...回顾了半导体生化传感器 (ISFET 和 LA PS)在医学监测、免疫检测、免疫分析、D N A 杂交以及细胞培养等方面应用的进展。为使半导体器件适用于生化检测,对其中所采用的检测手段和取得的研究结果进行了分析。展望了通过与微流体网络相结合,基于半导体传感器的实验室芯片化的可行性。展开更多
文摘The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.
基金Project supported by the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)
文摘In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS- HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.
基金supported by the National Basic Research Program of China(2013CB933501)the National Natural Science Foundation of China
文摘Organic semiconductors have gradually become the super stars on the stage of optoelectronic materials, due to their low cost, flexibility and solution processability. Numerous organic semiconductors, including small molecules and conjugated polymers, have been designed and synthesized to explore the potential of organic materials in optoelectronic industry. One-dimensional micro/nanostructures of organic semiconductors generally have more ordered packing structure with fewer defects compared with thin films, and are thus thought to show intrinsic carrier mobility of organic materials. Moreover, the packing structure in micro/nanostructures is clear and relatively easy to analyze, which makes these micro/nanostructures a good platform to study structure-property relationship. Therefore, design of suitable organic molecules to form micro-/nanostructures and methods to obtain ideal micro/nanostructures for functional devices will be fully discussed in this mini review. Finally, the perspective and opportunity of 1D micro/nanostructured organic materials based OFETs in the near future are also addressed.
基金support of the National Natural Science Foundation of China (60771031, 60736004, 20571079, 20721061 and 50725311)Ministry of Science and Technology of China (2006CB806200, 2006CB932100) and Chinese Academy of Sciences
文摘Organic single crystals hold great promise for the development of organic semiconductor materials,because they could reveal the intrinsic electronic properties of these materials,providing high-performance electronic devices and probing the structureproperty relationships.This article reviews the preparation methods for organic single crystals or crystalline micro/nanostructures,including vapor phase growth methods and solution-processed methods,and summarizes a few methods employed in the fabrication of field-effect transistors along with dozens of examples concerning both small molecules and polymers with high field-effect performance.
基金National Natural Science Foundation of China(No.62005042)。
文摘二维半导体过渡金属二硫属化物(transition metal dichalcogenide,TMD)具有独特的电学、光学和力学性能,在数字电路、光伏器件和能量存储等多个领域中具有巨大的应用潜力。通过表面掺杂控制TMD的电学性能为实现灵敏传感提供了有效的方法。本文开展了氧等离子体对二硫化钼(MoS_(2))掺杂特性的研究。首先,测试了MoS_(2)场效应晶体管(field-effect transistor,FET)的输运特性,发现氧等离子体处理对FET具有p型掺杂作用。随后,通过拉曼光谱研究了掺杂机制的成因,并证实了沟道表面类MoO_(3)缺陷的形成。最后,研究了经等离子体处理的晶体管的湿度传感特性,由于氧等离子体处理使得沟道对水分子的吸收中心增加,在潮湿环境下晶体管具有十分灵敏的响应特性,源漏电流值变化了约54%。这项工作不仅提供了一种调控TMD电学性能的简单方法,也展示了低维材料化学传感器的发展潜力。
基金supported by National Natural Science Foundation of China(No.10975114)
文摘We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons and electron exchange-correlation. We find that, while the elec- tron scattering, the wave number along y direction and the electron exchange-correlation suppress the radiation power, but the thermal motion of electrons and the quantum effects can amplify the radiation power. The radiation frequency decreases with electron exchange-correlation con- tributions, but increases with quantum effects, motion of electrons. It is worth mentioning that radiation frequency. These properties could be plasma oscillations in nanometer FET. the wave number along y direction and thermal the electron scattering has scarce influence on the of great help to the realization of practical THz
文摘In this paper,the Dyakonov-Shur instability of terahertz(THz)plasma waves has been analyzed in gated cylindrical field effect transistor(FET).In the cylindrical FET,the hydrodynamic equations in cylindrical coordinates are used to describe the THz plasma wave in twodimensional electronic gas.The research results show that the oscillation frequency of the THz plasma wave is increased by increasing the component of wave in the circumferential direction,but in stability increment of the THz plasma wave are in creased by increasing the radius of channel.
基金supported by National Natural Science Foundation of China(No.10975114)
文摘The instability of terahertz(THz)plasma waves in two-dimensional(2D)quantum electron gas in a nanometer field effect transistor(FET)with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas:gated and ungated regions.The results show that the radiation frequency and the increment(radiation power)in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61176101)the "Zijing Program Foundation"of Zhejiang Universitythe Natural Science Foundation of Zhejiang Province for Oversea Returners
文摘After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe suhstrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.
文摘In this stud high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 〈 3, - 4, and 〉 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and oDtoelectronic alpplications.