Zn Se nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photoluminescence and surface photovoltage(SPV) techniques were used to study the optoelectronic properties of th...Zn Se nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photoluminescence and surface photovoltage(SPV) techniques were used to study the optoelectronic properties of the as-grown Zn Se nanoribbons. Three deep defect(DD)-related emission bands, respectively, centered at 623 nm(DD1), 563 nm(DD2)and 525 nm(DD3), emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV.展开更多
Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diam...Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2. 71 e V and a deep level emission band peaked at around 2.00 eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.展开更多
基金This work was supported by the National Natural Science Foundation of China （No.20671027）, and the Natural Science Foundation of Anhui province, China （No.050440904）.
基金supported by the National Natural Science Foundation of China(11374092,61474040,11204073)the National Basic Research Program of China(2012CB933703)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province and the Hunan Provincial Science and Technology Department(2014FJ2001,2014GK3015,2014TT1004)
文摘Zn Se nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photoluminescence and surface photovoltage(SPV) techniques were used to study the optoelectronic properties of the as-grown Zn Se nanoribbons. Three deep defect(DD)-related emission bands, respectively, centered at 623 nm(DD1), 563 nm(DD2)and 525 nm(DD3), emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10374004, 90201037, and 50172001, the State Key Lab on Integrated 0ptoelectronics, and the National Center for Nanoscience and Technology, China.
文摘Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2. 71 e V and a deep level emission band peaked at around 2.00 eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.
