Electrical conductivity of molten slag is an important physicochemical property for designing the refming process in electric smelting furnaces. Though conductivities of many slag systems have been measured, the quant...Electrical conductivity of molten slag is an important physicochemical property for designing the refming process in electric smelting furnaces. Though conductivities of many slag systems have been measured, the quantitative relationships of conductivity with slag composition and temperature are still very limited. In this article, the Arrhenius law was used to describe the experimental data of conductivities for CaO-MgO-Al2O3-SiO2, CaO-Al2O3-SiO2, CaO-MnO-AlEO3-SiO2, as well as CaO-MgO-MnO- Al2O3-SiO： systems, and it is found that activation energy can be expressed as a linear function of the content of components, where the optical basicity of slag must be within the range of 0.58 to 0.68.展开更多
A PGSTAT 30 and a BOOSTER 20A were used to measure cell impedance.Electrical conductivity was gained by the Continuously Varying Cell Constant Technique.Electrical conductivity of KCl was measured for comparison.The r...A PGSTAT 30 and a BOOSTER 20A were used to measure cell impedance.Electrical conductivity was gained by the Continuously Varying Cell Constant Technique.Electrical conductivity of KCl was measured for comparison.The results prove that the method is reliable and accurate.The electrical conductivity of Na3AlF6-AlF3-Al2O3-CaF2-LiF(NaCl)system was studied by this method.Activation energy of conductance was obtained based on the experiment results.The experiments show that electrical conductivity is increased greatly with NaCl and LiF added.Increasing 1%LiF(mass fraction)results in corresponding increase of 0.0276 S/cm for superheat condition of 15℃.For NaCl,it is 0.024 S/cm.Electrical conductivity is increased by 0.003 S/cm with 1℃temperature increase.The electrical conductivity is lower than that predicted by the WANG Model and higher than that predicted by the Choudhary Model.展开更多
The effects of contents of AlF3 and Al2O3, and temperature on electrical conductivity of (Na3AlF6-40%K3AlF6)- AlF3-Al2O3 were studied by continuously varying cell constant (CVCC) technique. The results show that the c...The effects of contents of AlF3 and Al2O3, and temperature on electrical conductivity of (Na3AlF6-40%K3AlF6)- AlF3-Al2O3 were studied by continuously varying cell constant (CVCC) technique. The results show that the conductivities of melts increase with the increase of temperature, but by different extents. Every increasing 10 ℃ results in an increase of 1.85×10-2, 1.86×10-2, 1.89×10-2 and 2.20×10-2 S/cm in conductivity for the (Na3AlF6-40%K3AlF6)-AlF3 melts containing 0%, 20%, 24%, and 30% AlF3, respectively. An increase of every 10 ℃ in temperature results an increase about 1.89×10-2, 1.94×10-2, 1.95×10-2, 1.99×10-2 and 2.10×10-2 S/cm for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts containing 0%, 1%, 2%, 3% and 4% Al2O3, respectively. The activation energy of conductance was calculated based on Arrhenius equation. Every increasing 1% of AlF3 results in a decrease of 0.019 and 0.020 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3 melts at 900 and 1 000 ℃, respectively. Every increase of 1% Al2O3 results in a decrease of 0.07 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts. The activation energy of conductance increases with the increase in content of AlF3 and Al2O3.展开更多
Dc/ac transport characteristic of PECVD grown hydrogenated amorphous silicon carbide (a-SiCx:H) thin film was investigated in MIS (metal/insulator/semiconductor) structure by dc current/voltage (I/V) at different temp...Dc/ac transport characteristic of PECVD grown hydrogenated amorphous silicon carbide (a-SiCx:H) thin film was investigated in MIS (metal/insulator/semiconductor) structure by dc current/voltage (I/V) at different temperature (T), ac admittance vs. temperature at constant gate bias voltages and deep level transient spectroscopy (DLTS), respectively. According to I-V-T analysis, two main regimes exhibited. At low electric field, apparent Ohm’s law dominated with Arrhenius type thermal activation energy (EA) around 0.4 eV in both forward and reverse directions. At high field, on the contrary, space charge limited (SCL) current mechanism was eventual. The current transport mechanisms and its temperature/frequency dependence were interpreted by a thermally activated hopping processes across the localized states within a-SiCx:H thin film since 0.4 eV as EA was not high enough for intrinsic band conduction. Instead, transport of charge carriers took place in two steps;first a carrier is thermally excited to an empty energy level from an occupied state then multi-step tunnelling or hopping starts over. Therefore, the two steps mechanisms manifested as single activation energy, differing only through capture cross sections. In turn, two steps in capacitance together with conductance peaks in C-(G)-T while convoluted DLTS signal associated with such events in the measurements.展开更多
Gd2O3∶Tb3+ luminescent nanoparticles were prepared by the thermal decomposition of the nanosized oxlate prepared in the reverse microemulsions based on triton X-100/n-hexyl alcohol, n-octane, and water. From TG-DTA, ...Gd2O3∶Tb3+ luminescent nanoparticles were prepared by the thermal decomposition of the nanosized oxlate prepared in the reverse microemulsions based on triton X-100/n-hexyl alcohol, n-octane, and water. From TG-DTA, XRD and FTIR analyses, the mechanism of thermal decomposition of the nanosized oxalate precursor is suggested as follows: Gd2(C2O4)3·10H2O → Gd2(C2O4)3 + 10H2O, Gd2(C2O4)3 → Gd2O2(CO3) + 3CO +2CO2, Gd2O2(CO3) → Gd2O3 + CO2. The kinetic parameters of thermal decomposition reaction-activation energy E of stage 2 and 3 are 194.6 kJ·mol-1, 110.9 kJ·mol-1, respectively, using Ozawa method. And the reaction order n is 2.9 and 0.43, respectively, according to the TG curves.展开更多
基金supported by the National Natural Science Foundation of China (No.50774004)
文摘Electrical conductivity of molten slag is an important physicochemical property for designing the refming process in electric smelting furnaces. Though conductivities of many slag systems have been measured, the quantitative relationships of conductivity with slag composition and temperature are still very limited. In this article, the Arrhenius law was used to describe the experimental data of conductivities for CaO-MgO-Al2O3-SiO2, CaO-Al2O3-SiO2, CaO-MnO-AlEO3-SiO2, as well as CaO-MgO-MnO- Al2O3-SiO： systems, and it is found that activation energy can be expressed as a linear function of the content of components, where the optical basicity of slag must be within the range of 0.58 to 0.68.
基金Project(50334030)supported by the National Natural Science Foundation of China
文摘A PGSTAT 30 and a BOOSTER 20A were used to measure cell impedance.Electrical conductivity was gained by the Continuously Varying Cell Constant Technique.Electrical conductivity of KCl was measured for comparison.The results prove that the method is reliable and accurate.The electrical conductivity of Na3AlF6-AlF3-Al2O3-CaF2-LiF(NaCl)system was studied by this method.Activation energy of conductance was obtained based on the experiment results.The experiments show that electrical conductivity is increased greatly with NaCl and LiF added.Increasing 1%LiF(mass fraction)results in corresponding increase of 0.0276 S/cm for superheat condition of 15℃.For NaCl,it is 0.024 S/cm.Electrical conductivity is increased by 0.003 S/cm with 1℃temperature increase.The electrical conductivity is lower than that predicted by the WANG Model and higher than that predicted by the Choudhary Model.
基金Project(2005CB623703) supported by the Major State Basic Research and Development Program of ChinaProject(2008AA030503) supported by the National High-Tech Research and Development Program of ChinaProject(GUIKEJI 0639032) supported by Applied Basic Research in Guangxi Province, China
文摘The effects of contents of AlF3 and Al2O3, and temperature on electrical conductivity of (Na3AlF6-40%K3AlF6)- AlF3-Al2O3 were studied by continuously varying cell constant (CVCC) technique. The results show that the conductivities of melts increase with the increase of temperature, but by different extents. Every increasing 10 ℃ results in an increase of 1.85×10-2, 1.86×10-2, 1.89×10-2 and 2.20×10-2 S/cm in conductivity for the (Na3AlF6-40%K3AlF6)-AlF3 melts containing 0%, 20%, 24%, and 30% AlF3, respectively. An increase of every 10 ℃ in temperature results an increase about 1.89×10-2, 1.94×10-2, 1.95×10-2, 1.99×10-2 and 2.10×10-2 S/cm for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts containing 0%, 1%, 2%, 3% and 4% Al2O3, respectively. The activation energy of conductance was calculated based on Arrhenius equation. Every increasing 1% of AlF3 results in a decrease of 0.019 and 0.020 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3 melts at 900 and 1 000 ℃, respectively. Every increase of 1% Al2O3 results in a decrease of 0.07 S/cm in conductivity for (Na3AlF6-40%K3AlF6)-AlF3-Al2O3 melts. The activation energy of conductance increases with the increase in content of AlF3 and Al2O3.
文摘Dc/ac transport characteristic of PECVD grown hydrogenated amorphous silicon carbide (a-SiCx:H) thin film was investigated in MIS (metal/insulator/semiconductor) structure by dc current/voltage (I/V) at different temperature (T), ac admittance vs. temperature at constant gate bias voltages and deep level transient spectroscopy (DLTS), respectively. According to I-V-T analysis, two main regimes exhibited. At low electric field, apparent Ohm’s law dominated with Arrhenius type thermal activation energy (EA) around 0.4 eV in both forward and reverse directions. At high field, on the contrary, space charge limited (SCL) current mechanism was eventual. The current transport mechanisms and its temperature/frequency dependence were interpreted by a thermally activated hopping processes across the localized states within a-SiCx:H thin film since 0.4 eV as EA was not high enough for intrinsic band conduction. Instead, transport of charge carriers took place in two steps;first a carrier is thermally excited to an empty energy level from an occupied state then multi-step tunnelling or hopping starts over. Therefore, the two steps mechanisms manifested as single activation energy, differing only through capture cross sections. In turn, two steps in capacitance together with conductance peaks in C-(G)-T while convoluted DLTS signal associated with such events in the measurements.
文摘Gd2O3∶Tb3+ luminescent nanoparticles were prepared by the thermal decomposition of the nanosized oxlate prepared in the reverse microemulsions based on triton X-100/n-hexyl alcohol, n-octane, and water. From TG-DTA, XRD and FTIR analyses, the mechanism of thermal decomposition of the nanosized oxalate precursor is suggested as follows: Gd2(C2O4)3·10H2O → Gd2(C2O4)3 + 10H2O, Gd2(C2O4)3 → Gd2O2(CO3) + 3CO +2CO2, Gd2O2(CO3) → Gd2O3 + CO2. The kinetic parameters of thermal decomposition reaction-activation energy E of stage 2 and 3 are 194.6 kJ·mol-1, 110.9 kJ·mol-1, respectively, using Ozawa method. And the reaction order n is 2.9 and 0.43, respectively, according to the TG curves.
