CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent gr...CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.展开更多
通过改变处理衬底表面的方法,制备出不同的微米金刚石薄膜。具体的方法是利用磁控溅射在陶瓷衬底上面镀上一层厚金属钛,对金属钛层进行不同的表面处理后,放在微波等离子体化学气相沉积腔中制备微米金刚石薄膜。对不同的薄膜用二极管型...通过改变处理衬底表面的方法,制备出不同的微米金刚石薄膜。具体的方法是利用磁控溅射在陶瓷衬底上面镀上一层厚金属钛,对金属钛层进行不同的表面处理后,放在微波等离子体化学气相沉积腔中制备微米金刚石薄膜。对不同的薄膜用二极管型结构测试了它们的场致发射电子的性能,良好的表面处理能达到在电场2.1 V/μm下,9.2 m A/cm^2优秀的发射效果。并对发射机理和场发射特性进行了深入的研究。展开更多
文摘CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.
文摘通过改变处理衬底表面的方法,制备出不同的微米金刚石薄膜。具体的方法是利用磁控溅射在陶瓷衬底上面镀上一层厚金属钛,对金属钛层进行不同的表面处理后,放在微波等离子体化学气相沉积腔中制备微米金刚石薄膜。对不同的薄膜用二极管型结构测试了它们的场致发射电子的性能,良好的表面处理能达到在电场2.1 V/μm下,9.2 m A/cm^2优秀的发射效果。并对发射机理和场发射特性进行了深入的研究。
