Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification

This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.

Effective technology for processing industrial volatile organic compounds by the atmospheric pressure microwave plasma torch

In this study,we investigated the abatement of volatile organic compounds(VOCs)by the atmospheric pressure microwave plasma torch(AMPT).To study the treatment efficiency of AMPT,we used the toluene and water-based varnish to simulate VOCs,respectively.By measuring the compounds and contents of the mixture gas before/after the microwave plasma process,we have calculated the treatment efficiency of AMPT.The experimental results show that the treatment efficiency of AMPT for toluene with a concentration of 17.32×10^(4) ppm is up to 60 g/kWh with the removal rate of 86%.For the volatile compounds of water-based varnish,the removal efficiency is up to 97.99%.We have demonstrated the higher potential for VOCs removal of the AMPT process.

Use of a Microwave Plasma Process at Atmospheric Pressure for Bacterial Inactivation without Thermal Effects

An atmospheric microwave plasma argon was used for the inactivation of bacteria E. coli. The employed device, called Axial Injection Torch (or TIA for Torche à Injection Axiale), consisted of a microwave power source, a waveguide and a gas supply system. Using this argon plasma source, we studied the effects of the exposure time, the exposure distance, the input power, and the gas flow rate on the reduction rate of Escherichia coli cells. The first part of the study was carried out with a static sample exposed to the plasma and then in the second part the sample was set in motion relative to the plasma jet. A log reduction number of E. coli of 4 (10-4 CFU/mL) was obtained with UV and active species, for UV only a log of 1 (10-1 CFU/mL) was obtained.

DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD

Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.

A New Atmospheric Pressure Microwave Plasma Source (APMPS)

An atmospheric pressure microwave plasma source （APMPS） that can generate a large volume of plasma at an atmospheric pressure has been developed at Tsinghua University. This paper presents the design of this APMPS, the theoretical consideration of microwave plasma ignition and the simulation results, including the distributions of the electric field and power density inside the cavity as well as the accuracy of the simulation results. In addition, a method of producing an atmospheric pressure microwave plasma and some relevant observations of the plasma are also provided. It is expected that this research would be useful for further developing atmospheric pressure microwave plasma sources and expanding the scope of their applications.

Studies on Excitation and Rotational Temperatures of an Oxygen-shielded Argon Microwave Plasma Torch Source

Excitation（ Texc ） and rotation（ Trot ） temperatures were determined under different conditions for an oxygen-shielded argon microwave plasmsa torch source（OS-Ar-MPT）. The Texc value, which was shown to be between 4300 and 5250 K under different operating conditions, was calculated from the slope of the Boltzmann plot with Fe as the thermometric species. The Trot value, which was in the range of 2100-2500 K, was measured with OH molecular spectra. The influences of microwave power, flow rates of the support gas, cartier gas, and shielding gas, as well as the observation height on Texc and Trot were investigated and discussed. The detailed results of Texc and Trot provided a better understanding of the performance of an OS-ArMPT as a source for atomic emission spectrometry.

Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition （MPCVD） in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope （FESEM） and Raman spectroscopy. These nano^carbon films are possessed of good field emission （FE） characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim （F-N） model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current （SCLC） effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

Study of Spectral Character of Alkali Metals Using Microwave Plasma Torch Simultaneous Spectrometer

A microwave plasma torch （MPT） simultaneous spectrometer was used to study the spectral character and the matrix effect on alkali metal ions in solution. The main parameters were optimized. The microwave forward power was 100 W. The argon flow rate that was used to sustain the Ar-MPT included the flow rate of carrier gas and the flow rate of support gas, which were 0. 8 and 1.0 L/min, respectively. The HC1 concentration in the solution was 0.02 mol/L. The observation height was 9. 0 ram. The detection limits of Li, Na, K, Rb, and Cs were 0. 0003, 0. 0004, 0. 009, 0.07 and 2.4 mg/L, respectively, and the resuhs obtained by the Ar-MPT were compared with those obtained by argon inductively coupled plasma（Ar-ICP） and argon microwave induced plasma（Ar-MIP）. The interference effects of several matrix elements were also studied.

Preparation of Iron Nanoparticles from Iron Pentacarbonyl Using an Atmospheric Microwave Plasma

A novel method is introduced for preparing iron nanoparticles from iron pentacar- bonyl using an atmospheric microwave plasma. The prepared iron nanoparticles were characterized by transmission electron microscopy and X-ray diffraction. The results show that the size of the particles can be controlled by adjusting the microwave power and the flow rate of the carrier gas. The magnetic properties of the synthesized iron particles were studied and a saturation magnetiza- tion of ~95 emu/g was obtained. The convenient preparation process and considerable production rate were also found to be satisfactory for industrial applications.

Growth of 4＂ diameter polycrystailine diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition

Polycrystalline diamond（PCD） films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition（MPCVD） at different process parameters,and their thermal conductivity（TC） is evaluated by a laser flash technique（LFT） in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon（a-C） presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m-1 K-1 at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established.

Effect of N2 and O2 on OH radical production in an atmospheric helium microwave plasma jet

UV-pulsed laser cavity ringdown spectroscopy of the hydroxyl radical OH(A–X)(0–0)band in the wavelength range of 306–310 nm was employed to determine absolute number densities of OH in the atmospheric helium plasma jets generated by a 2.45 GHz microwave plasma source.The effect of the addition of molecular gases N2 and O2 to He plasma jets on OH generation was studied.Optical emission spectroscopy was simultaneously employed to monitor reactive plasma species.Stark broadening of the hydrogen Balmer emission line(Hβ)was used to estimate the electron density ne in the jets.For both He/N2 and He/O2 jets,ne was estimated to be on the order of 10^15 cm^?3.The effects of plasma power and gas flow rate were also studied.With increase in N2 and O2 flow rates,ne tended to decrease.Gas temperature in the He/O2 plasma jets was elevated compared to the temperatures in the pure He and He/N2 plasma jets.The highest OH densities in the He/N2 and He/O2 plasma jets were determined to be 1.0×10^16 molecules/cm^3 at x=4 mm(from the jet orifice)and 1.8×10^16 molecules/cm^3 at x=3 mm,respectively.Electron impact dissociation of water and water ion dissociative recombination were the dominant reaction pathways,respectively,for OH formation within the jet column and in the downstream and far downstream regions.The presence of strong emissions of the N2^+ bands in both He/N2 and He/O2 plasma jets,as against the absence of the N2^+ emissions in the Ar plasma jets,suggests that the Penning ionization process is a key reaction channel leading to the formation of N2^+ in these He plasma jets.

An investigation on improving the homogeneity of plasma generated by linear microwave plasma source with a length of 1550 mm

To develop a larger in-line plasma enhanced chemical vapor deposition(PECVD)device,the length of the linear microwave plasma source needs to be increased to 1550 mm.This paper proposes a solution to the problem of plasma inhomogeneity caused by increasing device length.Based on the COMSOL Multiphysics,a multi-physics field coupling model for in-line PECVD device is developed and validated.The effects of microwave power,chamber pressure,and magnetic flux density on the plasma distribution are investigated,respectively,and their corresponding optimized values are obtained.This paper also presents a new strategy to optimize the wafer position to achieve the balance between deposition rate and film quality.Numerical results have indicated that increasing microwave power and magnetic flux density or decreasing chamber pressure all play positive roles in improving plasma homogeneity,and among them,the microwave power is the most decisive influencing factor.It is found that the plasma homogeneity is optimal under the condition of microwave power at 2000 W,chamber pressure at 15 Pa,and magnetic field strength at 45 mT.The relative deviation is within−3.7%to 3.9%,which fully satisfies the process requirements of the equipment.The best position for the wafer is 88 mm from the copper antenna.The results are very valuable for improving the quality of the in-line PECVD device.

EVALUATON OF MICROWAVE PLASMA TORCH FOR ATOMIC FLUORESCENCE SPECTROMETRY WITH AN ULTRASONIC NEBULIZATION SAMPLE INTRODUCTION SYSTEM

In this paper, a new MPT(microwave plasma torch) device has been used as a atomizer for atomic fluorescence spectrometry. Spme elements, such as Zn, Cd, Hg, Pb, As, Co, Mg, Cu, Ag, Mn, Fe have been investigated in detail.

Reduction of Ilmenite Through Microwave Plasma

Ilmenite was reduced through microwave plasma-assisted chemical vapor deposition with continuously flowing hydrogen and methane gas. The reduction products were analyzed by XRD and SEM technology, and the component products were TiO 2 -Carbon Nanotubes （CNTs） composite powders. The reduction process was in good agreement with the Jander equation. Compared with other reduction process by kinetics analysis, microwave plasma could significantly facilitate the reduction process at low temperature.

Decomposition reaction of phosphate rock under the action of microwave plasma

The decomposition reaction of phosphate rock under the action of microwave plasma was investigated.Phosphate rock and its decomposition products were characterized by x-ray diffraction(XRD),energy disperse spectroscopy(EDS),and chemical analysis.The measurements of electron temperature(T_(e)) and electron density(N_(e)) of plasma plume under atmospheric pressure were carried out using optical emission spectroscopy(OES).The electron temperature(T_(e)) was determined based on the calculation of the relative intensity of the O Ⅱ(301.91 nm) and O Ⅱ(347.49 nm) spectral lines.Correspondingly,electron densities were obtained using the Saha ionization equation which was based on the C Ⅰ(247.86 nm) line and the C Ⅱ(296.62 nm) line under the assumption of local thermodynamic equilibrium(LTE).The relationship between the relative intensity of the active components and the gas output was studied by the spectrometer.Finally the reaction mechanism of the decomposition of the phosphate rock under the action of the atmospheric pressure microwave plasma was proposed.The results showed that with the increase of CO flow and microwave power,the electron temperature and electron density in the plasma show a decreasing and increasing trend.The CO is dissociated into gaseous carbon ions under the action of microwave plasma,and the presence of gaseous carbon ions promotes the decomposition of the phosphate rock.

Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

Boron-doped nanocrystalline diamond（NCD） exhibits extraordinary mechanical properties and chemical stability,making it highly suitable for biomedical applications.For implant materials,the impact of boron-doped NCD films on the character of cell growth（i.e.,adhesion,proliferation） is very important.Boron-doped NCD films with resistivity of 10-2Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition（MPCVD） process with H2 bubbled B2O3.The crystal structure,diamond character,surface morphology,and surface roughness of the boron-doped NCD films were analyzed using different characterization methods,such as X-ray diffraction（XRD）,Raman spectroscopy,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope（SKFM）.The cytotoxicity of films was studied by in vitro tests,including fluorescence microscopy,SEM and MTT assay.Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates.MG-63 cells adhered well and exhibited a significant growth on the surface of films,suggesting that the boron-doped NCD films were non-toxic to cells.

Evaluation of Improved Ultrasonic Nebulizer for Miniature Simultaneous Microwave Plasma Torch Spectrometer

A new automatic sample solution introduction system for miniature simultaneous microwave plasma torch（MPT） atomic emission spectrometer was developed. The operating parameters were optimized. The detection limits of the spectrometer with an ultrasonic nebulizer for Ag, Al, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Sr, and V are 5-10 times lower than those obtained with a pneumatic nebulizer and are also lower than those obtained by a Model JX-lOlO MPT spectrometer. Two practical samples were analyzed to test the reliability and sensitivity of the system.

Characteristics of Analyte Ionization in Low Power Microwave Plasma Torch

The ionization characteristics of the analytes in a low power Ar microwave plasma torch (MPT) was studied. The influence of forward microwave power, the flow rate of carrier gas and matrix element on the degree of ionization were observed. The axial profiles of the degree of the ionization of some elements were determined. The experimental results are very important for developing the new analytical source——microwave plasma torch (MPT).