In this paper the operation principle of the GaAs switch of the type of substrate-edge excitation is set forward, and the configuration parameters of the microstrip switch are designed. In the meantime, a method of pr...In this paper the operation principle of the GaAs switch of the type of substrate-edge excitation is set forward, and the configuration parameters of the microstrip switch are designed. In the meantime, a method of producing short pulses laser with high peak power is presented. The experimental results show that the insertion loss of the microwave switching is less than 1dB and the isolation is up to 30dB.展开更多
A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in de...A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.展开更多
We investigate the distribution of the switching current of a current-biased Josephson junction （CBJJ） and its dependence on the microwave frequency using two theoretical methods, one of which is the quantum traject...We investigate the distribution of the switching current of a current-biased Josephson junction （CBJJ） and its dependence on the microwave frequency using two theoretical methods, one of which is the quantum trajectory method and the other is the master equation method. Both the methods show that the distribution of the switching current of CBJJ will exhibit double peaks in a certain range of microwave frequency if proper microwave power is given, and the gap between the two peaks will increase with the microwave frequency. The obtained results can be used to identify the energy difference of the ground and first excited states in a Josephson junction for any bias current.展开更多
基金the Pre-research Fund of the Commission of Science,Technology and Industry for National Defence.
文摘In this paper the operation principle of the GaAs switch of the type of substrate-edge excitation is set forward, and the configuration parameters of the microstrip switch are designed. In the meantime, a method of producing short pulses laser with high peak power is presented. The experimental results show that the insertion loss of the microwave switching is less than 1dB and the isolation is up to 30dB.
文摘A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CBA00107,2011CB922104 and2011CBA00202the National Natural Science Foundation of China under Grant Nos 61371036,11234006,11227904 and 11474154+3 种基金the Natural Science Foundation of Jiangsu Province under Grant No BK2012013the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20120091110030the Dengfeng Project B of Nanjing University,Jiangsu Key Laboratory of Advanced Manipulating Techniques of Electromagnetic Wavesthe Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘We investigate the distribution of the switching current of a current-biased Josephson junction （CBJJ） and its dependence on the microwave frequency using two theoretical methods, one of which is the quantum trajectory method and the other is the master equation method. Both the methods show that the distribution of the switching current of CBJJ will exhibit double peaks in a certain range of microwave frequency if proper microwave power is given, and the gap between the two peaks will increase with the microwave frequency. The obtained results can be used to identify the energy difference of the ground and first excited states in a Josephson junction for any bias current.
