In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as ...In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as a function of pulse repetition frequency(PRF) and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.展开更多
A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple...A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple charging and discharging circuitry.Simple transient analysis and design of the circuit are presented along with their operating principle.The pulse generator produces truly balanced monocycle pulse with 500 ps pulse-width and 800 mV peak voltage.The generated monocycle pulse also has very symmetrical positive and negative portions and low ringing level.The presented pulse generator can be used as both a transmitter feeding UWB balanced antennas without broadband baluns and a balanced switching pulse generator that used in UWB receiver.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as a function of pulse repetition frequency(PRF) and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.
文摘A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple charging and discharging circuitry.Simple transient analysis and design of the circuit are presented along with their operating principle.The pulse generator produces truly balanced monocycle pulse with 500 ps pulse-width and 800 mV peak voltage.The generated monocycle pulse also has very symmetrical positive and negative portions and low ringing level.The presented pulse generator can be used as both a transmitter feeding UWB balanced antennas without broadband baluns and a balanced switching pulse generator that used in UWB receiver.