Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic ...Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic types: one is transition between the same kind of transmission lines on different planes of a common substrate, the other transition between different types of transmission lines. Furthermore, future development of transition structures is discussed.展开更多
In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the develo...In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the development trend of IPD-based multifunctional microwave circuits is predicted further by analyzing the current research hot spots.This paper discusses a distinctive research area for microwave circuits and mobile-terminal radio-frequency integrated chips.展开更多
A bandwidth microwave second harmonic generator is successfully designed using composite right/left-handed non- linear transmission lines （CRLH NLTLs） in a GaAs monolithic microwave integrated circuit （MMIC） techn...A bandwidth microwave second harmonic generator is successfully designed using composite right/left-handed non- linear transmission lines （CRLH NLTLs） in a GaAs monolithic microwave integrated circuit （MMIC） technology. The structure parameters of CRLH NLTLs, e.g. host transmission line, rectangular spiral inductor, and nonlinear capacitor, have a great impact on the second harmonic performance enhancement in terms of second harmonic frequency, output power, and conversion efficiency. It has been experimentally demonstrated that the second harmonic frequency is deter- mined by the anomalous dispersion of CRLH NLTLs and can be significantly improved by effectively adjusting these structure parameters. A good agreement between the measured and simulated second harmonic performances of Ka-band CRLH NLTLs frequency multipliers is successfully achieved, which further validates the design approach of frequency multipliers on CRLH NLTLs and indicates the potentials of CRLH NLTLs in terms of the generation of microwave and millimeter-wave signal source.展开更多
A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz cente...A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.展开更多
基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中...基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。展开更多
基金Supported by the Specialized Research Fund for the Doctoral Program of Higher Education (No.20010614003) and the Key Project of Chinese Ministry of Education(No.104166).
文摘Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic types: one is transition between the same kind of transmission lines on different planes of a common substrate, the other transition between different types of transmission lines. Furthermore, future development of transition structures is discussed.
基金Beijing Natural Science Foundation(No.JQ19018)National Natural Science Foundations of China(No.U20A20203 and No.61971052)National Special Support Program for High-Level Personnel Recruitment(No.2018RA2131)。
文摘In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the development trend of IPD-based multifunctional microwave circuits is predicted further by analyzing the current research hot spots.This paper discusses a distinctive research area for microwave circuits and mobile-terminal radio-frequency integrated chips.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401373)the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)
文摘A bandwidth microwave second harmonic generator is successfully designed using composite right/left-handed non- linear transmission lines （CRLH NLTLs） in a GaAs monolithic microwave integrated circuit （MMIC） technology. The structure parameters of CRLH NLTLs, e.g. host transmission line, rectangular spiral inductor, and nonlinear capacitor, have a great impact on the second harmonic performance enhancement in terms of second harmonic frequency, output power, and conversion efficiency. It has been experimentally demonstrated that the second harmonic frequency is deter- mined by the anomalous dispersion of CRLH NLTLs and can be significantly improved by effectively adjusting these structure parameters. A good agreement between the measured and simulated second harmonic performances of Ka-band CRLH NLTLs frequency multipliers is successfully achieved, which further validates the design approach of frequency multipliers on CRLH NLTLs and indicates the potentials of CRLH NLTLs in terms of the generation of microwave and millimeter-wave signal source.
文摘A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.
文摘基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。
