In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer...In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.展开更多
In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2....In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.展开更多
A novel widely tunable dual-wavelength mid-IR difference frequency generation （DFG） scheme with uniform grating periodically poled lithium niobate （PPLN） is presented in this paper. By using the temperature-depend...A novel widely tunable dual-wavelength mid-IR difference frequency generation （DFG） scheme with uniform grating periodically poled lithium niobate （PPLN） is presented in this paper. By using the temperature-dependent dispersion property of PPLN, the quasi-phase matching （QPM） peak for the pump may evolve into two separate ones and the wavelength spacing between them increases with the decrease of the crystal temperature. Such two pump QPM peaks may allow simultaneous dual-wavelength mid-IR laser radiations while properly setting the two fundamental pump wavelengths. With this scheme, mid-IR dual-wavelength laser radiations at around 3.228 and 3.548, 3.114 and 3.661, and 3.019 and 3.76 μm, are experimentally achieved for the crystal temperatures of 90, 65, and 30 ℃, respectively, based on the fiber laser fundamental lights.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2014CB643903,2013CB932904,2012CB932701,and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+2 种基金the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,61306013,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)China Postdoctoral Science Foundation(Grant No.2014M561029)
文摘In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.
基金Project supported by the National Basic Research Program of China(Grant Nos.2016YFB0402403 and 2013CB932904)the National Natural Science Foundation of China(Grant Nos.61290303 and 61306013)China Postdoctoral Science Foundation(Grant No.2016M601100)
文摘In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.
基金Project supported by the National Natural Science Foundation of China(Grant No.11374161)the Open Research Project of Jiangsu Provincial Key Labo-ratory of Meteorological Observation and Information Processing,China(Grant No.KDXS1206)the Project Funded by the Priority Academic Program Development of Jiangsu Provincial Higher Education Institutions,China
文摘A novel widely tunable dual-wavelength mid-IR difference frequency generation （DFG） scheme with uniform grating periodically poled lithium niobate （PPLN） is presented in this paper. By using the temperature-dependent dispersion property of PPLN, the quasi-phase matching （QPM） peak for the pump may evolve into two separate ones and the wavelength spacing between them increases with the decrease of the crystal temperature. Such two pump QPM peaks may allow simultaneous dual-wavelength mid-IR laser radiations while properly setting the two fundamental pump wavelengths. With this scheme, mid-IR dual-wavelength laser radiations at around 3.228 and 3.548, 3.114 and 3.661, and 3.019 and 3.76 μm, are experimentally achieved for the crystal temperatures of 90, 65, and 30 ℃, respectively, based on the fiber laser fundamental lights.
