Fe^(2+)/Mn^(2+)活化亚硫酸盐降解盐酸土霉素的机理研究

盐酸土霉素常被用于治疗畜禽疾病,但是它不能被畜禽完全代谢,残留的盐酸土霉素进入水体危害水环境的健康。铁锰作为常见的过渡金属,通常以二价态活化亚硫酸盐来降解有机污染物,反应条件温和、操作简单,但是单独的二价铁与二价锰氧化还原电势低,活化亚硫酸盐效果较差。本研究采用Fe^(2+)/Mn^(2+)共活化Na_(2)SO_(3)降解水中的盐酸土霉素,考察药剂用量、pH、溶解氧、氯离子、碳酸根及腐殖酸对Fe^(2+)/Mn^(2+)/Na_(2)SO_(3)体系降解盐酸土霉素的影响;通过焦磷酸盐实验、自由基淬灭实验和EPR实验分析Fe^(2+)/Mn^(2+)/Na_(2)SO_(3)体系中的活性物种;利用紫外可见光谱、傅里叶红外光谱、气相色谱-质谱联用仪识别盐酸土霉素的官能团及其降解中间产物的变化,推断盐酸土霉素的降解途径。结果表明:当Fe^(2+)/Mn^(2+)/Na_(2)SO_(3)浓度比为1∶4∶20(浓度分别为0.1、0.4和2 mmol/L)时,在反应45 min、pH为9.0条件下,盐酸土霉素的去除率和矿化率最高,分别达到94%和49%。随着溶解氧从9 mg/L下降至1.89 mg/L,盐酸土霉素去除率从94%下降至17%;氯离子、腐殖酸和碳酸根均对盐酸土霉素的降解产生抑制作用。Mn(Ⅲ)和SO_(4)·^(-)是降解盐酸土霉素的主要活性氧化剂,盐酸土霉素的降解经过电子转移、开环与酰基化等过程。

Mn^(2+)掺杂对YAG∶Ce^(3+)荧光陶瓷发光性能的影响

过渡族金属Mn^(2+)掺杂的石榴石荧光陶瓷被认为是实现高显色激光照明的候选材料。然而,由于Mn^(2+)在不同配位环境下离子半径的多样性,Mn^(2+)掺杂石榴石陶瓷体系设计方案尚不明确。本文采用真空烧结技术制备得到不同浓度Mn^(2+)掺杂的YAG∶Ce^(3+)荧光陶瓷,并将Mn^(2+)分别设计进入八面体(OC)和十二面体(DO)格位。通过表征样品物相和显微结构、光致发光、荧光寿命、量子效率等,并通过LD激光器激发对荧光陶瓷的发光性能进行研究。实验结果表明,在添加电荷与体积补偿剂SiO_(2)的前提下,相比Mn^(2+)进入十二面体格位,Mn^(2+)进入八面体后石榴石的晶体结构更加稳定。因此,当Mn^(2+)的浓度控制在0.5%^(6)%(at)范围内,OC系列样品的量子效率高于DO系列样品。此外,OC系列样品的PL谱中位于588 nm和725 nm处的发射峰分别对应于Mn^(2+)占据八面体和十二面体格位的^(4)T_(1)→^(6)A_(1)电子跃迁,而DO系列样品中位于572 nm处的发射峰则源于Mn^(2+)占据扭曲的十二面体格位产生的电子跃迁。得益于Ce^(3+)→Mn^(2+)间高效的能量传递,将浓度为6%(at)的Mn^(2+)设计进入YAG∶Ce^(3+)中八面体格位制得荧光陶瓷,封装得到的激光白光光源的显色指数为70.8,相对色温为5117 K。本文对于Mn^(2+)掺杂的石榴石发光材料的开发研究是有力补充,也为提升YAG∶Ce^(3+)荧光陶瓷光谱中的红光成分,进而提高医疗、显示等领域的激光光源的显色性能提供借鉴。

Mn^(2+)促进Bacillus altitudinis LZP02生物膜形成

【目的】Bacillus altitudinis LZP02是一株水稻根际促生菌(PGPR),能定殖于水稻根部,形成生物膜,且Mn^(2+)对LZP02菌株生物膜形成具有促进作用,但调控机制尚不明确,旨在探究Mn^(2+)对LZP02菌株生物膜形成的促进机制。【方法】采用结晶紫染色法进行生物膜定量分析、蒽酮-硫酸法测定胞外多糖产量、扫描电镜(SEM)观察LZP02菌株在水稻根际定殖情况、转录组学测序技术分析差异表达基因(DEGs)。【结果】添加4 mmol/L Mn^(2+)和8 mmol/L Mn^(2+)显著提高了LZP02菌株的成膜能力和胞外多糖产量,扫描电镜发现4 mmol/L Mn^(2+)和8 mmol/L Mn^(2+)提高了LZP02菌株在水稻根际的定殖能力,随着Mn^(2+)浓度的增加,DEGs数量显著增多,其主要富集在芽孢形成、毒素代谢途径和双组分系统中。1 mmol/L Mn^(2+)和4 mmol/L Mn^(2+)处理组发现skf操纵子中基因的表达均上调。扫描电镜观察发现在1 mmol/L Mn^(2+)和4 mmol/L Mn^(2+)处理组中LZP02菌体存在损伤。4 mmol/L Mn^(2+)处理组双组分系统中KinE和Spo0A基因均显著上调。【结论】Mn^(2+)通过“嗜食同类”和双组分系统中KinE基因激活Spo0A~P提高了菌株LZP02的成膜能力。

Mn^(2+)掺杂Cs_(3)Cu_(2)I_(5)微晶的温和、快速溶液法合成

在铜基金属卤化物Cs_(3)Cu_(2)I_(5)中掺杂Mn^(2+)是拓宽发光范围的重要途径,但是已报道的掺杂方法大多需要高温、惰性气氛、较长时间和专用设备等。本工作将CsI固体粉末直接投加至CuI和MnCl_(2)的氢碘酸溶液中,在较低温度(60℃)、空气条件下快速(3 min)合成Mn^(2+)掺杂Cs_(3)Cu_(2)I_(5)微晶,并测试了其结构和发光性能。通过系列对比实验,提出一种由反应物溶解度控制的“缓释生长-掺杂”机制,证实CsI固体粉末在高浓度氢碘酸中的缓慢溶解能够降低Cs_(3)Cu_(2)I_(5)晶体的生长速率,为Mn^(2+)的低温、可控掺杂提供有利的动力学条件。该方法为全无机金属卤化物体系的掺杂发光和掺杂动力学研究提供了新的思路。

羟基磷灰石的优化制备及其对Mn^(2+)的吸附性能

使用共沉淀法,在不同pH、Ca/P摩尔比、陈化时间条件下制备羟基磷灰石(HAP),并根据其对Mn^(2+)的吸附性能获得制备HAP的优化条件。在此基础上,通过静态试验,研究了优化制备的HAP在溶液pH、投加量、反应时间以及Mn^(2+)初始浓度的影响下对Mn^(2+)的吸附性能,并结合吸附动力学模型和吸附等温模型分析其吸附机理。结果表明,HAP的最佳制备条件为pH=10、摩尔比Ca/P=1.67、陈化时间24 h。当锰初始浓度5 mg/L、pH=7、HAP投加量1 g/L、反应时间360 min时,HAP对Mn^(2+)的吸附效果最好,其吸附量与去除率分别为4.97 mg/g和98.4%。HAP对Mn^(2+)的吸附更符合Freundlich等温线模型和准二级动力学模型,为多层化学吸附。

NaZH复合材料的制备及其对Mn^(2+)的吸附性能

制备3%NaCl改性沸石负载羟基磷灰石复合材料(NaZH),采用摇瓶试验研究pH、材料投加量、Mn^(2+)初始浓度和反应时间对NaZH吸附Mn^(2+)效果的影响,并通过吸附动力学模型和吸附等温模型初步分析吸附机理。此外,应用SEM-EDS、BET、FTIR和XPS等表征手段进一步探究NaZH的材料性质及反应机理。结果表明,Mn^(2+)溶液pH=7、初始浓度5 mg/L、NaZH投加量2 g/L和反应时间240 min为最佳吸附条件,此时Mn^(2+)去除率和吸附量分别为99.25%和2.58 mg/g。吸附过程符合Freundlich模型和准二级动力学模型,为多层化学吸附。表征结果显示,NaZH是羟基磷灰石包裹在沸石表面的复合材料,粗糙多孔,官能团丰富。NaZH主要以溶解-沉淀、离子交换和表面络合三种形式吸附Mn^(2+)。

Neutral and metallic vs.charged and semiconducting surface layer in acceptor doped CeO_(2)

The monomolecular surface layer of acceptor doped CeO_(2) may become neutral and metallic or charged and semiconducting.This is revealed in the theoretical analysis of the oxygen pressure dependence of the surface defects concentration in acceptor doped ceria with two different dopant types and operated under different oxygen pressures.Recently published experimental data for highly reduced Sm0.2Ce0.8O1.9-x(SDC)containing a fixed valence dopant Sm3+are very different from those published for Pr0.1Ce0.9O_(2)-x(PCO) with the variable valence dopant Pr4+/Pr3+being reduced under milder conditions.The theoretical analysis of these experimental results fits very well the experimental results of SDC and PCO.It leads to the following predictions:the highly reduced surface of SDC is metallic and neutral,the metallic surface electron density of state is gs=0.9×10^(38)J-1·m^(-2)(1.4×1015eV^(-1)·cm^(-2)),the electron effective mass is meff,s=3.3me,and the phase diagram of the reduced surface has theα(fcc)structure as in the bulk.In PCO a double layer is predicted to be formed between the surface and the bulk with the surface being negatively charged and semiconducting.The surface of PCO maintains high Pr^(3+) defect concentration as well as relative high oxygen vacancy concentration at oxygen pressures higher than in the bulk.The reasons for the difference between a metallic and semiconducting surface layer of acceptor doped CeO_(2) are reviewed,as well as the key theoretical considerations applied in coping with this problem.For that we make use of the experimental data and theoretical analysis available for acceptor doped ceria.

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS_(2) device(on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS_(2)(about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2×10^(4) s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

Selective core-shell doping enabling high performance 4.6 V-LiCoO_(2)

Constructing robust surface and bulk structure is the prerequisite for realizing high performance high voltage LiCoO_(2)(LCO).Herein,we manage to synthesize a surface Mg-doping and bulk Al-doping coreshell structured LCO,which demonstrates excellent cycling performance.Half-cell shows 94.2%capacity retention after 100 cycles at 3.0-4.6 V(vs.Li/Li^(+))cycling,and no capacity decay after 300 cycles for fullcell test(3.0-4.55 V).Based on comprehensive microanalysis and theoretical calculations,the degradation mechanisms and doping effects are systematically revealed.For the undoped LCO,high voltage cycling induces severe interfacial and bulk degradations,where cracks,stripe defects,fatigue H2 phase,and spinel phase are identified in grain bulk.For the doped LCO,Mg-doped surface shell can suppress the interfacial degradations,which not only stabilizes the surface structure by forming a thin rock-salt layer but also significantly improves the electronic conductivity,thus enabling superior rate performance.Bulk Al-doping can suppress the lattice"breathing"effect and the detrimental H3 to H1-3 phase transition,which minimizes the internal strain and defects growth,maintaining the layered structure after prolonged cycling.Combining theoretical calculations,this work deepens our understanding of the doping effects of Mg and Al,which is valuable in guiding the future material design of high voltage LCO.

Durable hierarchical phosphorus‐doped biphase MoS_(2)electrocatalysts with enhanced H^(*)adsorption

Phase engineering is an efficient strategy for enhancing the kinetics of electrocatalytic reactions.Herein,phase engineering was employed to prepare high‐performance phosphorous‐doped biphase(1T/2H)MoS_(2)(P‐BMS)nanoflakes for hydrogen evolution reaction(HER).The doping of MoS_(2)with P atoms modifies its electronic structure and optimizes its electrocatalytic reaction kinetics,which significantly enhances its electrical conductivity and structural stability,which are verified by various characterization tools,including X‐ray photoelectron spectroscopy,high‐resolution transmission electron microscopy,X‐ray absorption near‐edge spectroscopy,and extended X‐ray absorption fine structure.Moreover,the hierarchically formed flakes of P‐BMS provide numerous catalytic surface‐active sites,which remarkably enhance its HER activity.The optimized P‐BMS electrocatalysts exhibit low overpotentials(60 and 72 mV at 10 mA cm^(−2))in H_(2)SO_(4)(0.5 M)and KOH(1.0 M),respectively.The mechanism of improving the HER activity of the material was systematically studied using density functional theory calculations and various electrochemical characterization techniques.This study has shown that phase engineering is a promising strategy for enhancing the H*adsorption of metal sulfides.

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS_(2)

Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Enhanced stability of FA-based perovskite:Rare-earth metal compound EuBr_(2) doping

It is highly desirable to enhance the long-term stability of perovskite solar cells(PSCs)so that this class of photovoltaic cells can be effectively used for the commercialization purposes.In this contribution,attempts have been made to use the two-step sequential method to dope EuBr_(2)into FAMAPbI_(3)perovskite to promote the stability.It is shown that the device durability at 85℃in air with RH of 20%-40%is improved substantially,and simultaneously the champion device efficiency of 23.04%is achieved.The enhancement in stability is attributed to two points:(ⅰ)EuBr_(2)doping effectively inhibits the decomposition andα-δphase transition of perovskite under ambient environment,and(ⅱ)EuBr_(2)aggregates in the oxidized format of Eu(BrO_(3))_(3)at perovskite grain boundaries and surface,hampering humidity erosion and mitigates degradation through coordination with H_(2)O.

Small but mighty:Empowering sodium/potassium-ion battery performance with S-doped SnO_(2) quantum dots embedded in N,S codoped carbon fiber network

SnO_(2) has been extensively investigated as an anode material for sodium-ion batteries(SIBs)and potassium-ion batteries(PIBs)due to its high Na/K storage capacity,high abundance,and low toxicity.However,the sluggish reaction kinetics,low electronic conductivity,and large volume changes during charge and discharge hinder the practical applications of SnO_(2)-based electrodes for SIBs and PIBs.Engineering rational structures with fast charge/ion transfer and robust stability is important to overcoming these challenges.Herein,S-doped SnO_(2)(S-SnO_(2))quantum dots(QDs)(≈3 nm)encapsulated in an N,S codoped carbon fiber networks(S-SnO_(2)-CFN)are rationally fabricated using a sequential freeze-drying,calcination,and S-doping strategy.Experimental analysis and density functional theory calculations reveal that the integration of S-SnO_(2) QDs with N,S codoped carbon fiber network remarkably decreases the adsorption energies of Na/K atoms in the interlayer of SnO_(2)-CFN,and the S doping can increase the conductivity of SnO_(2),thereby enhancing the ion transfer kinetics.The synergistic interaction between S-SnO_(2) QDs and N,S codoped carbon fiber network results in a composite with fast Na+/K+storage and extraordinary long-term cyclability.Specifically,the S-SnO_(2)-CFN delivers high rate capacities of 141.0 mAh g^(−1) at 20 A g^(−1) in SIBs and 102.8 mAh g^(−1) at 10 A g^(−1) in PIBs.Impressively,it delivers ultra-stable sodium storage up to 10,000 cycles at 5 A g^(−1) and potassium storage up to 5000 cycles at 2 A g^(−1).This study provides insights into constructing metal oxide-based carbon fiber network structures for high-performance electrochemical energy storage and conversion devices.

Al_(2)O_(3)表面包覆增强K_(2)SiF_(6)∶Mn^(4+)荧光粉发光性能和湿热稳定性

研究了粉末原子层沉积技术(ALD)在白光LED用K_(2)SiF_(6)∶Mn^(4+)(KSFM)红色荧光粉包覆和表面改性中的应用,以及对其结构特性、发光性能和湿热环境中稳定性的影响。结果表明,采用ALD技术以三甲基铝作为前驱体、臭氧作为氧化剂,可以在KSFM表面形成氧化铝包覆层。X射线衍射、表面形貌分析表明,ALD处理过程不会影响KSFM荧光粉的晶相和形貌特征。发光光谱分析表明,由于氧化铝钝化特性还会增强KSFM荧光粉的发光强度,并且不改变其发光波长。相较于未经包覆的KSFM荧光粉,包覆层可以显著改善KSFM粉末的湿热环境稳定性,ALD包覆后样品的相对发光强度在85%湿度/85℃环境中老化处理24 h后仍能保持初始值的84%。

新生成Ti(OH)_(4)沉淀物对水中Mn^(2+)的吸附机理研究

采用氧化Ti^(3+)方法得到水合Ti(OH)_(4)絮体沉淀物,研究了以新生成Ti(OH)_(4)絮体作为吸附剂吸附去除水中Mn^(2+)的效率,分析了吸附热力学、动力学及吸附前后Ti(OH)_(4)絮体的ζ电位变化,研究了pH值和几种常见离子对该吸附的影响。结果表明:Ti(OH)_(4)絮体对Mn2+的吸附可以较好地符合拟二级动力学模型;热力学结果显示,吉布斯自由能变化值ΔGΘ为负值,吸附反应可自发进行;吸附可以较好地用Langmuir等温式描述,pH值为7.0和8.5时,计算的Qmax分别为58.8 mg/g、92.6 mg/g,但pH值为8.5时不能排除Mn2+通过形成沉淀而去除的途径。在试验的条件下,吸附反应进行较快,吸附很快达到准平衡,而且平衡吸附容量与最大吸附容量在数值上较为接近,吸附性质属于单分子层化学吸附。吸附容量还与Ti(OH)4絮体表面的ζ电位值有一定的相关性,ζ电位值越低其对Mn^(2+)的吸附容量越大,并且吸附前后体系pH值的变化值(△pH)和Mn^(2+)的去除率(%)呈正向相关。水中NO_(3)^(-)、SO_(4)^(2-)、H_(2)PO_(4)^(2-)和HCO_(3)^(-)等离子可以促进Ti(OH)4对Mn2+的吸附,Ca^(2+)则表现出较强的抑制作用,而Na^(+)、K^(+)、Mg^(2+)、Cl^(-)等离子对吸附影响较小。Mn^(2+)的吸附机制实际上是静电吸引、表面配位、化学沉淀(高pH值时)的共同作用。

降香黄檀幼苗在重度Mn^(2+)胁迫下不同时期的光响应

研究降香黄檀幼苗在重度Mn^(2+)(50 mg/kg)胁迫下不同时期的光响应特性,阐明其在逆境下光合特性的适应和生理响应,为降香黄檀幼苗栽培技术、珍贵园林植物资源的引种和保护提供理论依据。利用YX1102便携式光合仪分别在胁迫初期(14 d)和后期(28 d)测定净光合速率(Pn)、蒸腾速率(Tr)、气孔导度(Gs)、胞间CO_(2)浓度(Ci)、叶片光合有效辐射(PAR)、空气相对湿度(RH)以及大气CO_(2)浓度(Ca)光合日变化参数。结果表明,在重度Mn^(2+)胁迫下,降香黄檀幼苗Tr、Gs、Pn日均值较CK均有所下降,而Ci日均值均高于CK组;在胁迫初期和后期Ci日均值分别比CK组高0.4%和10.8%;随着胁迫时间的推移,实验组Pn值从早上正值变化至基本处于负值。可见,重度Mn^(2+)胁迫会抑制降香黄檀幼苗光合作用。

CaTiF_(6)·2H_(2)O:Mn^(4+)窄带红色荧光粉的发光性能及其高显指暖白光LED应用

报道了一种新型的Mn^(4+)掺杂水合六氟钛酸钙CaTiF_(6)·2H_(2)O:Mn^(4+)红色荧光粉,详细研究了基质的结构转变和荧光粉的发光性能及高显色指数(显指)暖白光LED应用。CaTiF_(6)·2H_(2)O:Mn^(4+)在130~200℃间脱水转化为CaTiF_(6):Mn^(4+),荧光光谱发生改变,重新吸附水分子可恢复到CaTiF_(6)·2H_(2)O:Mn^(4+),发光性能不可逆。重要的是,该荧光粉在较长波626 nm和635 nm处分别发射锐线极强的零声子线(ZPL)和ν6振动峰,色坐标为(0.701,0.299),更接近人眼敏感的红光边界650 nm(色坐标x~0.72,y~0.28),有助于提高暖白光LED的显色指数、拓宽背光源的色域。晶体结构和晶体场强度计算指出,Mn^(4+)在CaTiF_(6)·2H_(2)O:Mn^(4+)中占据低对称性的格位,所受到的晶体场强度较弱,Mn—F键的共价性较强。另外,通过表面疏水化显著提升了荧光粉耐湿性能,共掺小离子半径的Si^(4+)增强了荧光粉发光热稳定性。以CaTiF_(6)·2H_(2)O:Mn^(4+)作为红光成分,获得了高显色指数(R_(a)=90,R_(9)=68)的暖白光LED,在高品质的暖白光照明中具有潜在的应用。

Mn^(2+)掺杂CsCdCl_(3)微米晶发光性能及其LED应用

全无机镉基金属卤化物CsCdCl_(3)因其独特的三维晶体结构而具有优异的稳定性、宽带自陷激子(Selftrapped excitons,STEs)发射和丰富的离子掺杂格位,在固态照明领域引起了广泛关注。然而,基于八面体畸变的STEs辐射复合的发光效率较低。本文采用简单的室温溶液法制备了一系列Mn^(2+)离子掺杂的六方相CsCdCl_(3)∶x%Mn微米晶。在254 nm紫外光激发下,Mn^(2+)掺杂的样品发出明亮的橙黄光,发射峰位于598 nm处,半峰宽为75 nm,荧光量子产率最高达99.1%。稳态和瞬态荧光光谱测试结果表明,Mn^(2+)掺杂CsCdCl_(3)微米晶的宽光谱发射源自基质的STEs和Mn^(2+)离子的d-d跃迁。同时,该材料还具备优异的空气、热、水稳定性。我们进一步将CsCdCl_(3)∶5%Mn^(2+)荧光粉、商用荧光粉、深紫外或蓝光LED芯片封装成两种白光发光二极管器件,色度坐标分别为(0.36,0.35)和(0.40,0.36),显色指数分别高达91和83,有望成为新一代发光材料用于照明领域。

Mn^(2+)催化亚硝酸氧化破坏H_(2)C_(2)O_(4)机理研究

为明确硝酸溶液中以Mn^(2+)作催化剂时,亚硝酸氧化破坏H_(2)C_(2)O_(4)的具体化学行为和反应机理,本文考察了在硝酸和硫酸体系中以Mn^(2+)作催化剂时亚硝酸氧化H_(2)C_(2)O_(4)的差异、Mn^(2+)与草酸络合对亚硝酸氧化Mn(Ⅱ)到Mn(Ⅲ)的作用以及Mn(Ⅲ)破坏H_(2)C_(2)O_(4)过程中产生的自由基,获得了具体的催化反应历程,推测了反应机理。结果表明,亚硝酸在催化反应过程中起主导作用,加入亚硝酸可有效消除反应初期存在的诱导期;反应过程中,溶液中游离的Mn^(2+)与H_(2)C_(2)O_(4)络合生成了MnC_(2)O_(4),而作为配体的草酸降低了Mn(Ⅱ)被氧化到Mn(Ⅲ)的反应活化能,使得亚硝酸能氧化MnC_(2)O_(4)并生成[Mn(C_(2)O_(4))_(3)]^(3-),Mn(Ⅲ)会将所络合的草酸氧化生成·OOC—COOH并被还原成Mn(Ⅱ),·OOC—COOH在酸性溶液中稳定性差,会迅速分解并释放出还原性物质,最终实现了H_(2)C_(2)O_(4)的氧化分解。