Up to now,substantial work has been carried out on different materials-based diluted magnetic semiconductors,and great achievements have been made on increasing Curie temperature of these materials.However,the carrier...Up to now,substantial work has been carried out on different materials-based diluted magnetic semiconductors,and great achievements have been made on increasing Curie temperature of these materials.However,the carrier mobility of the magnetic semiconductors is still low due to various scatterings,and rare studies have been performed to effectively enhance the carrier mobility.As we know,both high Curie-temperature ferromagnetism and high carrier mobility are important characteristics for ideal magnetic semiconductors,which are essential for spin polarized current generation and transport in real spintronic semiconducting devices.展开更多
This paper reports that a large amount of Mn-doped ZnO nanorods have been synthesized through thermal evaporation. The morphologies and properties are studied with x-ray diffraction, a scanning electron microscope, tr...This paper reports that a large amount of Mn-doped ZnO nanorods have been synthesized through thermal evaporation. The morphologies and properties are studied with x-ray diffraction, a scanning electron microscope, transmission electron microscope and Raman spectroscope. The results indicate that the manganese atoms occupy the zinc vacancies in the wurtzite lattice of ZnO without forming secondary phases. The exact manganese content has been studied by the x-ray fluorescence spectrum. Meanwhile, the magnetic moment versus temperature result proves that the as-prepared Mn-doped ZnO nanorods show ferromagnetic properties at temperatures as high as 400~K. These studies provide a good understanding of the origin of magnetic properties in diluted magnetic semiconductors.展开更多
A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposi...A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn^2＋ for Zn^2＋ without additional acceptor doping. The substitution of N for O （NO^-） is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn^2＋ and Mn^3＋ via NO^-, The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration.展开更多
This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and ha...This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn2p3/2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mmdoped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt.% and 10 wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.展开更多
In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O...In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400600℃, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope（SEM）. The optical characteristics were analyzed by absorption spectra and photoluminescence（PL） spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.展开更多
文摘Up to now,substantial work has been carried out on different materials-based diluted magnetic semiconductors,and great achievements have been made on increasing Curie temperature of these materials.However,the carrier mobility of the magnetic semiconductors is still low due to various scatterings,and rare studies have been performed to effectively enhance the carrier mobility.As we know,both high Curie-temperature ferromagnetism and high carrier mobility are important characteristics for ideal magnetic semiconductors,which are essential for spin polarized current generation and transport in real spintronic semiconducting devices.
基金supported by "973" Program of Ministry of Science and Technology of China (Grant No. 2006CB932402)National Natural Science Foundation of China (Grant Nos. 50702015, 10574034 and 10774032)
文摘This paper reports that a large amount of Mn-doped ZnO nanorods have been synthesized through thermal evaporation. The morphologies and properties are studied with x-ray diffraction, a scanning electron microscope, transmission electron microscope and Raman spectroscope. The results indicate that the manganese atoms occupy the zinc vacancies in the wurtzite lattice of ZnO without forming secondary phases. The exact manganese content has been studied by the x-ray fluorescence spectrum. Meanwhile, the magnetic moment versus temperature result proves that the as-prepared Mn-doped ZnO nanorods show ferromagnetic properties at temperatures as high as 400~K. These studies provide a good understanding of the origin of magnetic properties in diluted magnetic semiconductors.
基金Project supported by the Shanghai Nanotechnology Promotion Center (Grant No 0452nm071)the National Natural Science Foundation of China (Grant Nos 50702071 and 50772122)
文摘A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn^2＋ for Zn^2＋ without additional acceptor doping. The substitution of N for O （NO^-） is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn^2＋ and Mn^3＋ via NO^-, The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration.
基金Project supported by the State Key Development Program for Basic Research of China (Grant No 2004CB619302)
文摘This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn2p3/2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mmdoped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt.% and 10 wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.
基金supported in parts by the National Natural Science Foundation of China(No.60776004,60976071)the Laboratory for Thin Film Microfabrication of the Ministry of Education
文摘In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400600℃, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope（SEM）. The optical characteristics were analyzed by absorption spectra and photoluminescence（PL） spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.
