The high-temperature β-phase NaMnO2 is a promising material for Na-ion batteries（NIBs） due to its high capacity and abundant resources. However, the synthesis of phase-pure -NaMnO2 is burdensome and costineffective...The high-temperature β-phase NaMnO2 is a promising material for Na-ion batteries（NIBs） due to its high capacity and abundant resources. However, the synthesis of phase-pure -NaMnO2 is burdensome and costineffective because it needs to be sintered under oxygen atmosphere at high temperature and followed by a quenching procedure. Here we first report that the pure β phase can be stabilized by Cu-doping and easily synthesized by replacing a proportion of Mn with Cu via a simplified process including sintering in air and cooling to room temperature naturally. Based on the first-principle calculations, the band gap decreases from 0.7 eV to 0.3 eV, which indicates that the electronic conductivity can be improved by Cu-doping. The designed -NaCu（0.1）Mn（0.9）O2 is applied as cathode in NIBs, exhibiting an energy density of 419 Wh/kg and better performance in terms of rate capability and cycling stability than those in the undoped case.展开更多
The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epi...The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epitaxy,during which the single crystal phase can be obtained with Mn concentration less than 2%.Shubnikov-de Haas oscillation and quantum Hall effect are observed at low temperatures,and electrons are found to be the dominant carrier in the whole temperature range.Higher Mn content results in smaller lattice constant,lower electron mobility and larger effective band gap,while the carrier density seems to be unaffected by Mn-doping.Gating experiments show that Shubnikov-de Haas oscillation and quantum Hall effect are slightly modulated by electric field,which can be explained by the variation of electron density.Our results provide useful information for understanding the magnetic element doping effects on the transport properties of Cd3As2 films.展开更多
基金Supported by the National Key Technologies R&D Program of China under Grant No 2016YFB0901500the National Nature Science Foundation of China under Grant Nos 51725206 and 51421002
文摘The high-temperature β-phase NaMnO2 is a promising material for Na-ion batteries（NIBs） due to its high capacity and abundant resources. However, the synthesis of phase-pure -NaMnO2 is burdensome and costineffective because it needs to be sintered under oxygen atmosphere at high temperature and followed by a quenching procedure. Here we first report that the pure β phase can be stabilized by Cu-doping and easily synthesized by replacing a proportion of Mn with Cu via a simplified process including sintering in air and cooling to room temperature naturally. Based on the first-principle calculations, the band gap decreases from 0.7 eV to 0.3 eV, which indicates that the electronic conductivity can be improved by Cu-doping. The designed -NaCu（0.1）Mn（0.9）O2 is applied as cathode in NIBs, exhibiting an energy density of 419 Wh/kg and better performance in terms of rate capability and cycling stability than those in the undoped case.
基金supported by NSFC(Grants Nos.U1632264 and 11704374)the the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB44000000 and QYZDY-SSW-JSC015)。
文摘The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epitaxy,during which the single crystal phase can be obtained with Mn concentration less than 2%.Shubnikov-de Haas oscillation and quantum Hall effect are observed at low temperatures,and electrons are found to be the dominant carrier in the whole temperature range.Higher Mn content results in smaller lattice constant,lower electron mobility and larger effective band gap,while the carrier density seems to be unaffected by Mn-doping.Gating experiments show that Shubnikov-de Haas oscillation and quantum Hall effect are slightly modulated by electric field,which can be explained by the variation of electron density.Our results provide useful information for understanding the magnetic element doping effects on the transport properties of Cd3As2 films.
基金supported by the National Natural Science Foundation of China(20972015)the Natural Science Foundation of Beijing(Grant2082016)a joint project of Beijing Municipal Education Commission(China)
