Amorphous MnxGe1-x：H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron co- sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature...Amorphous MnxGe1-x：H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron co- sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x：H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6：H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.展开更多
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11204164)the National Natural Science Foundation of China (Grant No. 11174184)+1 种基金the National Basic Research Program of China (Grants Nos. 2013CB922303 and 2009CB929202)the National Funds for Distinguished Young Scholars of China (Grant No. 51125004)
文摘Amorphous MnxGe1-x：H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron co- sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x：H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6：H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.
