Uniform nanoparticles of molybdenum nitride were synthesized by temperature-programmed reaction(TPR) using MoO3 and ammonia as reactants. This material was characterized by X-ray diffractometry(XRD), transmission elec...Uniform nanoparticles of molybdenum nitride were synthesized by temperature-programmed reaction(TPR) using MoO3 and ammonia as reactants. This material was characterized by X-ray diffractometry(XRD), transmission electron microscopy(TEM), scanning electron microcopy(SEM) and cyclic voltammetry(CV). Results show that the material consists of a pure phase of γ-Mo2N nanoparticles with average diameter of about 16 nm. The material presents a specific capacitance of 172 F/g in 1 mol/L H2SO4 electrolyte at a scan rate of 1 mV/s and the potential window is broadened to 1.1 V (-0.6 to 0.5 V). At the 6 000th cycle, the material remains 94.9% and 94.7% of the initial capacitance in 1 mol/L H2SO4 and KCl solution, respectively. A possible mechanism comprising surface control and diffusion control is proposed to explain the effect of scan rates on specific capacitance.展开更多
基金Projects(08020203005, 07020203003) supported by the Annual Key Projects of Anhui Province, China
文摘Uniform nanoparticles of molybdenum nitride were synthesized by temperature-programmed reaction(TPR) using MoO3 and ammonia as reactants. This material was characterized by X-ray diffractometry(XRD), transmission electron microscopy(TEM), scanning electron microcopy(SEM) and cyclic voltammetry(CV). Results show that the material consists of a pure phase of γ-Mo2N nanoparticles with average diameter of about 16 nm. The material presents a specific capacitance of 172 F/g in 1 mol/L H2SO4 electrolyte at a scan rate of 1 mV/s and the potential window is broadened to 1.1 V (-0.6 to 0.5 V). At the 6 000th cycle, the material remains 94.9% and 94.7% of the initial capacitance in 1 mol/L H2SO4 and KCl solution, respectively. A possible mechanism comprising surface control and diffusion control is proposed to explain the effect of scan rates on specific capacitance.