Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency a...Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.展开更多
With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption...With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption ability and provide extra active sites for Na+adsorption.However,their synchronous engineering is rarely reported.Herein,a hybrid of Co_(0.85)Se/WSe_(2) heterostructure with Se vacancies and N-doped carbon polyhedron(CoWSe/NCP)has been fabricated for the first time via a hydrothermal and subsequent selenization strategy.Spherical aberration-corrected transmission electron microscopy confirms the phase interface of the Co_(0.85)Se/WSe_(2) heterostructure and the existence of Se vacancies.Density functional theory simulations reveal the accelerated charge transfer and enhanced Na+adsorption ability,which are contributed by the Co_(0.85)Se/WSe_(2) heterostructure and Se vacancies,respectively.As expected,the CoWSe/NCP anode in sodium-ion battery achieves outstanding rate capability(339.6 mAh g^(−1) at 20 A g^(−1)),outperforming almost all Co/W-based selenides.展开更多
Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most ...Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.11974379)the National Key Basic Research and Development Program of China (Grant No.2021YFC2203400)Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No.2022-13)。
文摘Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
基金support from the Natural Science Foundation of Jilin Province(Grant No.20200201073JC)the National Natural Science Foundation of China(Grant No.52130101)+1 种基金Interdisciplinary Integration and Innovation Project of JLU(Grant No.JLUXKJC2021ZY01)the Fundamental Research Funds for the Central Universities.
文摘With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption ability and provide extra active sites for Na+adsorption.However,their synchronous engineering is rarely reported.Herein,a hybrid of Co_(0.85)Se/WSe_(2) heterostructure with Se vacancies and N-doped carbon polyhedron(CoWSe/NCP)has been fabricated for the first time via a hydrothermal and subsequent selenization strategy.Spherical aberration-corrected transmission electron microscopy confirms the phase interface of the Co_(0.85)Se/WSe_(2) heterostructure and the existence of Se vacancies.Density functional theory simulations reveal the accelerated charge transfer and enhanced Na+adsorption ability,which are contributed by the Co_(0.85)Se/WSe_(2) heterostructure and Se vacancies,respectively.As expected,the CoWSe/NCP anode in sodium-ion battery achieves outstanding rate capability(339.6 mAh g^(−1) at 20 A g^(−1)),outperforming almost all Co/W-based selenides.
基金This work was supported by the National Natural Science Foundation of China(61704054,92161115,62374099,and 62022047)the Fundamental Research Funds for the Central Universities(JB2020MS042 and JB2019MS051).
文摘Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.
