In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of su...In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.展开更多
We report Q-switched and mode-locked erbium-doped all-fiber lasers using ternary ReS_(2(1-x))Se_(2x) as saturable absorbers(SAs). The modulation depth and saturable intensity of the film SA are 1.8% and 0.046 MW∕cm2....We report Q-switched and mode-locked erbium-doped all-fiber lasers using ternary ReS_(2(1-x))Se_(2x) as saturable absorbers(SAs). The modulation depth and saturable intensity of the film SA are 1.8% and 0.046 MW∕cm2.In Q-switched mechanism output, the pulse was centered at 1531.1 nm with maximum pulse energy and minimum pulse width of 28.29 nJ and 1.07 μs, respectively. In mode-locked operation, the pulse was centered at1561.15 nm with pulse width of 888 fs, repetition rate of 2.95 MHz, and maximum pulse energy of 0.275 nJ. To the best of our knowledge, this is the first report on the mode-locked Er^(3+)-doped fiber laser using ternary transition metal dichalcogenides. This work suggests prospective 2 D-material SAs can be widely used in versatile fields due to their attractive optoelectronic and tunable energy bandgap properties.展开更多
Transition metal dichalcogenide(TMD)alloys and heterostructures are attracting increasing attention thanks to their unique electronic,optical,and interfacial properties.However,the growth fundamental of TMD alloys and...Transition metal dichalcogenide(TMD)alloys and heterostructures are attracting increasing attention thanks to their unique electronic,optical,and interfacial properties.However,the growth fundamental of TMD alloys and heterostructures during one-step growth is still beyond understanding.Here,thermogravimetric(TG/DTG)technology is introduced to predict the evolution of the precursor(MoO_(3)and WO_(3))concentration in the vapor during growth.We establish the correlation between precursor concentration and the corresponding growth behavior.TG/DTG predication suggests that tuning precursor temperature and powder ratio can alter their concentration in the vapor,well explaining the formation of Mo_(x)W_(1-x)Se_(2) alloy or MoSe_(2)-WSe_(2) heterostructure at different growth conditions.Based on the TG/DTG analysis,we further design and grow a complex MoSe_(2)-Mo_(x)W_(1-x)Se_(2)-WSe_(2) heterostructure and Mo_(x)W_(1-x)Se_(2) monolayer alloys,confirming the validity of TG/DTG prediction in TMD crystal synthesis.Thus,employing TG/DTG to predict the synthesis of two-dimensional materials is of importance to understand the TMD growth behavior and provide guidance to the desired TMD heterostructure formation for future photoelectric devices.展开更多
基金the DFG research training group GRK 1896 at Erlangen University and from the Joint Project Helmholtz-Institute Erlangen-Nürnberg(HI-ERN)for Renewable Energy Production under Project DBF01253,respectivelyfinancial support through the“Aufbruch Bayern”initiative of the state of Bavaria(EnCN and Solar Factory of the Future)and the“Solar Factory of the Future”with the Energy Campus Nürnberg(EnCN).
文摘In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.
基金National Key R&D Program of China(2018YFB1107200)National Natural Science Foundation of China(NSFC)(61675158,21673058)+1 种基金Chinese Academy of Sciences Key Project(CAS Key Project)(QYZDBSSW-SYS031)Chinese Academy of Sciences(CAS)(XDB30000000)
文摘We report Q-switched and mode-locked erbium-doped all-fiber lasers using ternary ReS_(2(1-x))Se_(2x) as saturable absorbers(SAs). The modulation depth and saturable intensity of the film SA are 1.8% and 0.046 MW∕cm2.In Q-switched mechanism output, the pulse was centered at 1531.1 nm with maximum pulse energy and minimum pulse width of 28.29 nJ and 1.07 μs, respectively. In mode-locked operation, the pulse was centered at1561.15 nm with pulse width of 888 fs, repetition rate of 2.95 MHz, and maximum pulse energy of 0.275 nJ. To the best of our knowledge, this is the first report on the mode-locked Er^(3+)-doped fiber laser using ternary transition metal dichalcogenides. This work suggests prospective 2 D-material SAs can be widely used in versatile fields due to their attractive optoelectronic and tunable energy bandgap properties.
基金The National Natural Science Foundation of Giina(Nos.51702368,61974166,and 11674401)the Natural Science Foundation of Hunan Province(Nos.2018JJ3684 and 2019JJ40358)+1 种基金Innovation-Driven Project of Central South University(No.2018CX045)the Mechanism Research Funds for the Central South University(No.1053320181264)are acknowledged for financial support.
文摘Transition metal dichalcogenide(TMD)alloys and heterostructures are attracting increasing attention thanks to their unique electronic,optical,and interfacial properties.However,the growth fundamental of TMD alloys and heterostructures during one-step growth is still beyond understanding.Here,thermogravimetric(TG/DTG)technology is introduced to predict the evolution of the precursor(MoO_(3)and WO_(3))concentration in the vapor during growth.We establish the correlation between precursor concentration and the corresponding growth behavior.TG/DTG predication suggests that tuning precursor temperature and powder ratio can alter their concentration in the vapor,well explaining the formation of Mo_(x)W_(1-x)Se_(2) alloy or MoSe_(2)-WSe_(2) heterostructure at different growth conditions.Based on the TG/DTG analysis,we further design and grow a complex MoSe_(2)-Mo_(x)W_(1-x)Se_(2)-WSe_(2) heterostructure and Mo_(x)W_(1-x)Se_(2) monolayer alloys,confirming the validity of TG/DTG prediction in TMD crystal synthesis.Thus,employing TG/DTG to predict the synthesis of two-dimensional materials is of importance to understand the TMD growth behavior and provide guidance to the desired TMD heterostructure formation for future photoelectric devices.
