As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is t...The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.展开更多
We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopa...We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o...The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.展开更多
Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate th...Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate the MoS2 field-effect transistors(FETs)with a dual-gated(DG)architecture,which consists of symmetrical thickness for back gate(BG)and top gate(TG)dielectric.The thickness-dependent charge transport in our DG-MoS2 device is revealed by a four-terminal electrical measurement which excludes the contact influence,and the TCAD simulation is also applied to explain the experimental data.Our results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS2 channel,as it confines charge carriers in the center of the channel,which reduces the scattering and boosts the mobility compared to the single gating case.Furthermore,temperature-dependent transfer curves reveal that multi-layer MoS2 DG-FET is in the phonon-limited transport regime,while single layer MoS2 shows typical Coulomb impurity limited regime.展开更多
An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C sensor.Therefore,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to ...An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C sensor.Therefore,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to measure the different concentrations of the vitamin C solution in an optimum measurement environment.In order to find the best measurement conditions of the biosensor,we studied the vitamin C sensor in different pH values of the phosphate buffer solution (PBS).Additionally,we used experimental results to discuss the response time and response voltage to compare vitamin C with orange juice for the vitamin C sensor.展开更多
Negative Bias Temperature Instability （NBTI） has become one of the most serious reliability problems of metaloxide-semiconductor field-effect transistors （MOSFETs）. The degradation mechanism and model of NBTI are ...Negative Bias Temperature Instability （NBTI） has become one of the most serious reliability problems of metaloxide-semiconductor field-effect transistors （MOSFETs）. The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H^＋ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H^＋ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H^＋ generated during NBTI stress.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into o...Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices.展开更多
Bladder cancer is one of the commonest malignant tumors of urinary system with high recurrence. However, currently developed bladder cancer urine diagnosis methods are hindered by the low detection sensitivity and acc...Bladder cancer is one of the commonest malignant tumors of urinary system with high recurrence. However, currently developed bladder cancer urine diagnosis methods are hindered by the low detection sensitivity and accuracy. Herein, a molybdenum disulfide(MoS2) nanosheets-based field effect transistor(FET) sensor array was constructed for simultaneous detection of multiple bladder cancer biomarkers in human urine. With the excellent electronic property of MoS2 and the high specific identification capability of recognition molecules, the proposed biosensor array could simultaneously detect nuclear matrix protein 22(NMP22) and cytokeratin 8(CK8) with a wide linear range of 10-6–10-1 pg mL-1 and an ultra-low detection limit of 0.027 and 0.019 aM, respectively. Furthermore, this highly sensitive and specific MoS2 FET sensor array could be used to identify bladder cancer biomarkers from human urine samples. This designed high-performance biosensor array shows great potential in the future diagnosis of bladder cancer.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
文摘The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.
基金Supported by the National Natural Science Foundation of China under Grant No 61674161the Open Project of State Key Laboratory of Functional Materials for Informatics
文摘We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen)+1 种基金support from the Elemental Strategy Initiative conducted by the MEXT,Japana Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS
文摘The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.
基金supported by the National Key Research and Development Program of China(2016YFA0203900,2018YFA0306101)the National Natural Science Foundation of China(Grant No.91964202)Shanghai Municipal Science and Technology Commission(18JC1410300)。
文摘Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate the MoS2 field-effect transistors(FETs)with a dual-gated(DG)architecture,which consists of symmetrical thickness for back gate(BG)and top gate(TG)dielectric.The thickness-dependent charge transport in our DG-MoS2 device is revealed by a four-terminal electrical measurement which excludes the contact influence,and the TCAD simulation is also applied to explain the experimental data.Our results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS2 channel,as it confines charge carriers in the center of the channel,which reduces the scattering and boosts the mobility compared to the single gating case.Furthermore,temperature-dependent transfer curves reveal that multi-layer MoS2 DG-FET is in the phonon-limited transport regime,while single layer MoS2 shows typical Coulomb impurity limited regime.
文摘An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C sensor.Therefore,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to measure the different concentrations of the vitamin C solution in an optimum measurement environment.In order to find the best measurement conditions of the biosensor,we studied the vitamin C sensor in different pH values of the phosphate buffer solution (PBS).Additionally,we used experimental results to discuss the response time and response voltage to compare vitamin C with orange juice for the vitamin C sensor.
基金supported by the Fundamental Research Funds in Xidian Universities (Grant No.JY10000904009)the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No.2007BAK25B03)
文摘Negative Bias Temperature Instability （NBTI） has become one of the most serious reliability problems of metaloxide-semiconductor field-effect transistors （MOSFETs）. The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H^＋ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H^＋ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H^＋ generated during NBTI stress.
基金L.J.acknowledges the National Natural Science Foundation of China(No.21925504)Tsinghua Toyota Joint Research Fund.Z.H.C.acknowledges the National Natural Science Foundation of China(Nos.61674045,61911540074)Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China(Nos.21XNLG27,22XNH097).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices.
基金supported by the National Key Research and Development Program of China (2017YFA0208000)the National Natural Science Foundation of China (21925401, 21904033, 21675120)Changsha Municipal Science and Technology Projects, China (kq1901030)。
文摘Bladder cancer is one of the commonest malignant tumors of urinary system with high recurrence. However, currently developed bladder cancer urine diagnosis methods are hindered by the low detection sensitivity and accuracy. Herein, a molybdenum disulfide(MoS2) nanosheets-based field effect transistor(FET) sensor array was constructed for simultaneous detection of multiple bladder cancer biomarkers in human urine. With the excellent electronic property of MoS2 and the high specific identification capability of recognition molecules, the proposed biosensor array could simultaneously detect nuclear matrix protein 22(NMP22) and cytokeratin 8(CK8) with a wide linear range of 10-6–10-1 pg mL-1 and an ultra-low detection limit of 0.027 and 0.019 aM, respectively. Furthermore, this highly sensitive and specific MoS2 FET sensor array could be used to identify bladder cancer biomarkers from human urine samples. This designed high-performance biosensor array shows great potential in the future diagnosis of bladder cancer.
