期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition 被引量:1
1
作者 Hengchang Liu Yuanhu Zhu +5 位作者 Qinglong Meng Xiaowei Lu Shuang Kong Zhiwei Huang Peng Jiang Xinhe Bao 《Nano Research》 SCIE EI CAS CSCD 2017年第2期643-651,共9页
Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vap... Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time. 展开更多
关键词 mos2 monolayer carrier gas flow rate modified cvd
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部