磁性MoS_2/CuO/Fe_3O_4复合材料的合成及光催化性能研究

采用催化剂负载到助催化剂上制得一种可以磁分离的光催化复合材料。采用湿化学法制备纳米级二硫化钼,用化学沉淀法制备球状纳米级氧化铜,通过磁力搅拌将其分散在溶有二硫化钼的去离子水中,形成含二硫化钼/氧化铜复合微粒的微乳液,经水热反应、烘干得其复合材料。采用简单的溶剂热法制备球状Fe_(3)O_(4),将所得复合材料超声处理,使其均匀分散在含四氧化三铁的悬浊液中,再经水热反应、烘干煅烧后得到纳米级磁性MoS_(2)/CuO/Fe_(3)O_(4)复合材料。通过扫描电镜、红外等手段对该磁性复合材料进行表征,复合材料具有良好的吸附性能和光催化性能,并可通过磁场进行分离和回收。

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Optimal parameter space for stabilizing the ferroelectric phase of Hf_(0.5)Zr_(0.5)O_(2) thin films under strain and electric fields

Hafnia-based ferroelectric materials, like Hf_(0.5)Zr_(0.5)O_(2)(HZO), have received tremendous attention owing to their potentials for building ultra-thin ferroelectric devices. The orthorhombic(O)-phase of HZO is ferroelectric but metastable in its bulk form under ambient conditions, which poses a considerable challenge to maintaining the operation performance of HZO-based ferroelectric devices. Here, we theoretically addressed this issue that provides parameter spaces for stabilizing the O-phase of HZO thin-films under various conditions. Three mechanisms were found to be capable of lowering the relative energy of the O-phase, namely, more significant surface-bulk portion of(111) surfaces, compressive c-axis strain,and positive electric fields. Considering these mechanisms, we plotted two ternary phase diagrams for HZO thin-films where the strain was applied along the in-plane uniaxial and biaxial, respectively. These diagrams indicate the O-phase could be stabilized by solely shrinking the film-thickness below 12.26 nm, ascribed to its lower surface energies. All these results shed considerable light on designing more robust and higher-performance ferroelectric devices.

Enhanced Electrical Properties of Bi_(2−x)Sb_(x)Te_(3)Nanoflake Thin Films Through Interface Engineering

The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3)thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3)nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3)thin film.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Influence of Negative Bias Voltage on the Mechanical and Tribological Properties of MoS_2/Zr Composite Films

MoS2/Zr composite films were deposited on the cemented carbide YT14 （WC＋14%TiC＋6%Co） by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques.The influence of negative bias voltage on the composite film properties,including adhesion strength,micro-hardness,thickness and tribological properties were investigated.The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films.The effects of negative bias voltage on film properties were also put forward.The optimal negative bias voltage was -200 V under this experiment conditions.The obtained composite films were dense,the adhesion strength was about 60 N,the thickness was about 2.4 μm,and the micro-hardness was about 9.0 GPa.The friction coefficient and wear rate was 0.12 and 2.1×10-7 cm3/N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev·min-1.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Transparent Thermally Tunable Microwave Absorber Prototype Based on Patterned VO2 Film

Transparent microwave absorbers that exhibit high optical transmittance and microwave absorption capability are ideal,although having a fixed absorption performance limits their applicability.Here,a simple,transparent,and thermally tunable microwave absorber is proposed,based on a patterned vanadium dioxide(VO_(2))film.Numerical calculations and experiments demonstrate that the proposed VO_(2)absorber has a high optical transmittance of 84.9%at 620 nm;its reflection loss at 15.06 GHz can be thermally tuned from–4.257 to–60.179 dB,and near-unity absorption is achieved at 523.750 K.Adjusting only the patterned VO_(2)film duty cycle can change the temperature of near-unity absorption.Our VO_(2)absorber has a simple composition,a high optical transmittance,a thermally tunable microwave absorption performance,a large modulation depth,and an adjustable temperature tuning range,making it promising for application in tunable sensors,thermal emitters,modulators,thermal imaging,bolometers,and photovoltaic devices.

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

MoS_(2)/ZnO异质结纳米材料降解亚甲基蓝的光催化性能研究

为了提高ZnO的光转换效率,选用带隙较低的MoS_(2)形成异质结提高ZnO的光催化性能。通过水热法制备ZnO纳米棒,并进一步制备MoS_(2)/ZnO异质结构的纳米复合材料。通过扫描电镜(SEM)、X射线粉末衍射仪(XRD)、固体紫外可见漫反射测试仪(UV-Vis)和紫外可见分光光度计(UV-245)等分析方法对样品的形貌、结构及光学性能等进行表征。结果表明,MoS_(2)/ZnO异质结复合材料呈棒状结构,并由于内建电场存在可有效增强光生载流子的分离效率,进而提高了可见光区的吸收,提高了光催化性能。在模拟太阳光(包含紫外波段)下,60 min时MoS_(2)-15/ZnO纳米复合材料对亚甲基蓝的降解率可达99%,比纯ZnO的降解率提高了10%。

不同摩擦副条件下二硫化钼薄膜的摩擦学性能研究

为了研究MoS_(2)-Ti薄膜与9Cr18钢、W-DLC和DLC薄膜的摩擦学行为,分别采用磁控溅射技术和等离子体增强化学气相沉积技术在9Cr18钢表面沉积了MoS_(2)-Ti薄膜、W-DLC和DLC薄膜。用扫描电子显微镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。利用纳米压痕仪和球-盘摩擦试验机对不同薄膜的纳米硬度和摩擦学性能进行了分析。研究结果表明,MoS_(2)-Ti薄膜与DLC薄膜的摩擦因数和磨损率最小。相比MoS_(2)-Ti薄膜与不镀膜的9Cr18钢球摩擦副,MoS_(2)-Ti薄膜与W-DLC薄膜摩擦副的摩擦因数和磨损率没有减小。MoS_(2)-Ti薄膜与W-DLC薄膜摩擦副的磨损机制为磨粒磨损和黏着磨损,与DLC薄膜摩擦副的磨损机制为黏着磨损。摩擦副表面沉积DLC薄膜有助于降低MoS_(2)-Ti薄膜的摩擦因数和磨损率。

Growth behaviors and emission properties of Co-deposited MAPbI_(3) ultrathin films on MoS_(2)

Hybrid organic–inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide(MAPbI_(3)) ultrathin films via co-deposition of PbI_2 and CH_3NH_3I(MAI) on chemical-vapor-deposition-grown monolayer MoS_(2) as well as the corresponding photoluminescence(PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS_(2) tuned growth of MAPbI_(3) in a Stranski–Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI_(3) /MoS_(2) heterostructures have a type-Ⅱ energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI_(3) (at the initial stage) and on MAPbI_(3) crystals in averaged size of 500 nm(at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI_(3) /transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.

Effects of irradiation on superconducting properties of small-grained MgB_(2) thin films

We investigate the effect of ion irradiation on MgB_(2) thin films with small grains of approximately 122 nm and 140 nm.The flux pinning by grain boundaries is insignificant in the pristine MgB_(2) films due to good inter-grain connectivity,but is significantly improved after 120-keV Mn-ion irradiation.The scaling behavior of the flux pinning force density for the ion-irradiated MgB_(2) thin films with nanoscale grains demonstrates the predominance of pinning by grain boundaries,in contrast to the single-crystalline MgB_(2) films where normal point pinning was dominant after low-energy ion irradiation.These results suggest that irradiation-induced defects can accumulate near the grain boundaries in metallic MgB_(2) superconductors.

XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

The effects of radio frequency atmospheric pressure plasma and thermal treatment on the hydrogenation of TiO_(2) thin film

The effects of radio frequency(RF)atmospheric pressure(AP)He/H_(2)plasma and thermal treatment on the hydrogenation of TiO_(2)thin films were investigated and compared in this work.The color of the original TiO_(2)film changes from white to black after being hydrogenated in He/H_(2)plasma at160 W(gas temperature~381℃)within 5 min,while the color of the thermally treated TiO_(2)film did not change significantly even in pure H_(2)or He/H_(2)atmosphere with higher temperature(470℃)and longer time(30 min).This indicated that a more effective hydrogenation reaction happened through RF AP He/H_(2)plasma treatment than through pure H_(2)or He/H_(2)thermal treatment.The color change of TiO_(2)film was measured based on the Commission Internationale d’Eclairage L*a*b*color space system.Hydrogenated TiO_(2)film displayed improved visible light absorption with increased plasma power.The morphology of the cauliflower-like nanoparticles of the TiO_(2)film surface remained unchanged after plasma processing.X-ray photoelectron spectroscopy results showed that the contents of Ti3+species and Ti-OH bonds in the plasma-hydrogenated black TiO_(2)increased compared with those in the thermally treated TiO_(2).X-ray diffraction(XRD)patterns and Raman spectra indicated that plasma would destroy the crystal structure of the TiO_(2)surface layer,while thermal annealing would increase the overall crystallinity.The different trends of XRD and Raman spectra results suggested that plasma modification on the TiO_(2)surface layer is more drastic than on its inner layer,which was also consistent with transmission electron microscopy results.Optical emission spectra results suggest that numerous active species were generated during RF AP He/H_(2)plasma processing,while there were no peaks detected from thermal processing.A possible mechanism for the TiO_(2)hydrogenation process by plasma has been proposed.Numerous active species were generated in the bulk plasma region,accelerated in the sheath region,and bumped toward the TiO_(2)film,which will react with the TiO_(2)surface to form OVs and disordered layers.This leads to the tailoring of the band gap of black TiO_(2)and causes its light absorption to extend into the visible region.

Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed

Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

MoS_(2)/F-TiO_(2)异质结的制备及光降解罗丹明B性能研究

构建异质结型光催化剂是提高半导体光催化性能的有效方法之一,同时也是光催化处理有机废水的重要技术策略.采用沉淀胶溶法制备出F-TiO_(2),并与MoS_(2)复合构建兼具吸附-光催化性能的MoS_(2)/FTiO_(2)异质结.采用扫描电子显微镜(SEM)、比表面积分析仪(BET)、X射线衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)、紫可见吸收光谱(UV-Vis-Abs)、X射线光电子能谱仪(XPS)等技术分别对MoS_(2)/FTiO_(2)复合材料进行表征,研究了MoS_(2)/F-TiO_(2)的光催化性能.结果表明,1.0%MoS_(2)/F-TiO_(2)在降解有机污染物罗丹明B(RhB)溶液过程中表现出优异的光催化活性和稳定性.MoS_(2)和F-TiO_(2)形成异质结催化剂有效抑制光生载流子复合,提高光生电子和空穴分离率和寿命,从而产生更多羟基自由基和超氧自由基以提高光催化效率;并且1.0%MoS_(2)/F-TiO_(2)异质结具有较大的比表面积,可增加催化反应的活性位点和有机物在材料表面的吸附,使其35 min后降解率高达95.73%,显著高于纯TiO_(2)和F-TiO_(2).此外,MoS_(2)/FTiO_(2)复合材料具有良好的循环稳定性,经过5次重复降解测试,其对RhB的降解率仍保持在90%以上.

Fe、Ir掺杂MoS_(2)表面对N_(2)气敏吸附与解离反应性能提升的第一性原理研究

基于第一性原理方法,采用周期性平板模型,研究了N_(2)分子在掺杂体系TM-MoS_(2)(TM=Fe、Ir)表面的吸附和解离行为.研究表明:N_(2)分子在TM-MoS_(2)(TM=Fe、Ir)表面吸附能依次为0.62和0.47 eV,而完整MoS_(2)表面的吸附能只有0.08 eV,说明掺杂之后对N_(2)表现出略好的吸附性能.差分电荷密度分析表明,N_(2)吸附后,掺杂Fe、Ir原子与两个N原子之间电荷有所增加,N-N键之间的区域电荷密度减少,N-N键的强度减弱.态密度计算结果发现,N_(2)在吸附过程中,主要是N原子的2p_(y)、2p_(z)轨道与Ir的5d_(xy)和5d_(z^(2))以及Fe的3d_(xy)和3d_(z^(2))发生杂化作用.通过分析解离活化能,N_(2)在掺杂体系TM-MoS_(2)(TM=Fe、Ir)表面解离需要活化能均较高,且远大于在相应掺杂表面的吸附能,说明N_(2)在掺杂体系TM-MoS_(2)(TM=Fe、Ir)表面解离应该表现为分子吸附或脱附.