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The Analysis of Frequency Reuse Irregular Patterns in Mobile Telephone Network
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作者 LI HUA 《电信工程技术与标准化》 1999年第2期11-15,共5页
Some frequency reuse irregular patterns in radionetwork design are proposed,the characteristic and applica-tion measures of these patterns are analyzed.Then this paperaccounts that frequency reuse irregular patterns i... Some frequency reuse irregular patterns in radionetwork design are proposed,the characteristic and applica-tion measures of these patterns are analyzed.Then this paperaccounts that frequency reuse irregular patterns is a usefulway to impove spectrum efficiency and it is significative forartificial intelligence to be applied in this field. 展开更多
关键词 mobile communication network design frequency reuse irregular patterns artificial intelligence
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0.15-μm T-gate In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As InP-based HEMT with fmax of 390 GHz
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作者 钟英辉 张玉明 +4 位作者 张义门 王显泰 吕红亮 刘新宇 金智 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第12期522-526,共5页
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF c... In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance (gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BVGD) defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency (fT) of 164 GHz and a maximum oscillation frequency (fmax) of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications. 展开更多
关键词 breakdown voltage cut-off frequency high electron mobility transistors maximum oscillation frequency
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A VHF RFPGA with adaptive phase-correction technique
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作者 程序 郭桂良 +2 位作者 阎跃鹏 刘荣江 姜宇 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期183-187,共5页
This paper presents a VHF(30-300 MHz) RF programmable gain amplifier(PGA) with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a ... This paper presents a VHF(30-300 MHz) RF programmable gain amplifier(PGA) with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a whole satisfies all the specifications of the China mobile multimedia broadcasting VHF band applications.The RFPGA is implemented with a TSMC 0.25μm CMOS process.Measurement results reveal a gain range of around 61 dB,an ⅡP3 of-7 dBm at maximum gain,a power consumption of 10.2 mA at maximum gain,and a phase imbalance of less than 0.3 degrees. 展开更多
关键词 programmable gain amplifier very high frequency adaptive phase correction technique phase imbalance china mobile multimedia broadcasting
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