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Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering
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作者 Xianwu XIU Zhiyong PANG +3 位作者 Maoshui LV Ying DAI Li'na YE Shenghao HAN 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2007年第4期509-512,共4页
Transparent conducting oxide film of molybdenum-doped zinc oxide (MZO) with high transparency and relatively low resistivity was prepared by RF (radio frequency) magnetron sputtering at room temperature. The struc... Transparent conducting oxide film of molybdenum-doped zinc oxide (MZO) with high transparency and relatively low resistivity was prepared by RF (radio frequency) magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD (X-ray diffraction) patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa. 展开更多
关键词 Zinc oxide Magnetron sputtering Ar pressure molybdenum-doped ZnO Films
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