Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to ...Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).展开更多
1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for ox...1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve展开更多
General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crysta...General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crystal growth process in batches.展开更多
We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system ...We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.展开更多
Carbon-coated SiC@C nanocapsules （NCs） with a hexagonal platelet-like morphology were fabricated by a simple direct current （DC） arc-discharge plasma method. The SiC@C NCs were monocrystalline, 120-150 nm in size,...Carbon-coated SiC@C nanocapsules （NCs） with a hexagonal platelet-like morphology were fabricated by a simple direct current （DC） arc-discharge plasma method. The SiC@C NCs were monocrystalline, 120-150 nm in size, and approximately 50 nm thick. The formation of the as-prepared SiC@C NCs included nucleation of truncated octahedral SiC seeds and subsequent anisotropic growth of the seeds into hexagonal nanoplatelets in a carbon-rich atmosphere. The disordered carbon layers on the SiC@C NCs were converted into SiO2 shells of SiC@SiO2 NCs by heat treatment at 650 ℃ in air, during which the shape and inherent characteristics of the crystalline SiC core were obtained. The interface evolution from carbon to SiO2 shells endowed the SiC@SiO2 NCs with enhanced photocatalytic activity due to the hydrophilic and transparent nature of the SiO2 shell, as well as to the photosensitive SiC nanocrystals. The band gap of the nanostructured SiC core was determined to be 2.70 eV. The SiC@SiO2 NCs degraded approximately 95% of methylene blue in 160 min under visible light irradiation.展开更多
Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and ato...Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.展开更多
This theoretical work provides with results of characteristics calculation of the ultrasonic surface Zakharenko waves (USZWs) existing in piezomagnetic cubic monocrystals of class m3m that can be readily used for non-...This theoretical work provides with results of characteristics calculation of the ultrasonic surface Zakharenko waves (USZWs) existing in piezomagnetic cubic monocrystals of class m3m that can be readily used for non-destructive testing. The piezomagnetic waves propagate in direction [101] corresponding to relatively easy magnetization for the following piezomagnetics: Galfenol, Terfenol-D, and CoFe2O4 with cubic structures. The phase velocities of the USZW-waves and the coefficient of magnetomechanical coupling (CMMC) K2 were calculated for the crystals. It was found that the coefficient K2 for piezomagnetics with Km2 > 1/3 and Km2 >> 1/3 is about 8% to 9%, where K2 = 2 (VUSZW,o – VUSZW,c)/VUSZW,o and Km2 = h2/(Cμ). Knowledge of piezomagnetic properties of cubic crystals makes possible the use of them in new products utilizing the phenomenon called the magnetoelectric effect. Also, this study is useful for possible application of cubic piezomagnetics in composite structures consisting of piezoelectric and (or) piezomagnetic materials and in the microwave technology. This broadens choice of possible piezomagnetic materials for utilization in various technical devices.展开更多
文摘Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).
文摘1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
文摘General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crystal growth process in batches.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2015AA042602
文摘We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.
基金This work was financially supported from National Natural Science Foundations of China （Nos. 51331006 and 51271044）.
文摘Carbon-coated SiC@C nanocapsules （NCs） with a hexagonal platelet-like morphology were fabricated by a simple direct current （DC） arc-discharge plasma method. The SiC@C NCs were monocrystalline, 120-150 nm in size, and approximately 50 nm thick. The formation of the as-prepared SiC@C NCs included nucleation of truncated octahedral SiC seeds and subsequent anisotropic growth of the seeds into hexagonal nanoplatelets in a carbon-rich atmosphere. The disordered carbon layers on the SiC@C NCs were converted into SiO2 shells of SiC@SiO2 NCs by heat treatment at 650 ℃ in air, during which the shape and inherent characteristics of the crystalline SiC core were obtained. The interface evolution from carbon to SiO2 shells endowed the SiC@SiO2 NCs with enhanced photocatalytic activity due to the hydrophilic and transparent nature of the SiO2 shell, as well as to the photosensitive SiC nanocrystals. The band gap of the nanostructured SiC core was determined to be 2.70 eV. The SiC@SiO2 NCs degraded approximately 95% of methylene blue in 160 min under visible light irradiation.
基金This work is financially supported by the Russian Foundation for Basic Research (No 04-02-9700and 06-02-9600)by the Presidium of the Far Eastern Branch of the Russian Academy of Sciences(No 06-III-A-02-034)
文摘Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.
文摘This theoretical work provides with results of characteristics calculation of the ultrasonic surface Zakharenko waves (USZWs) existing in piezomagnetic cubic monocrystals of class m3m that can be readily used for non-destructive testing. The piezomagnetic waves propagate in direction [101] corresponding to relatively easy magnetization for the following piezomagnetics: Galfenol, Terfenol-D, and CoFe2O4 with cubic structures. The phase velocities of the USZW-waves and the coefficient of magnetomechanical coupling (CMMC) K2 were calculated for the crystals. It was found that the coefficient K2 for piezomagnetics with Km2 > 1/3 and Km2 >> 1/3 is about 8% to 9%, where K2 = 2 (VUSZW,o – VUSZW,c)/VUSZW,o and Km2 = h2/(Cμ). Knowledge of piezomagnetic properties of cubic crystals makes possible the use of them in new products utilizing the phenomenon called the magnetoelectric effect. Also, this study is useful for possible application of cubic piezomagnetics in composite structures consisting of piezoelectric and (or) piezomagnetic materials and in the microwave technology. This broadens choice of possible piezomagnetic materials for utilization in various technical devices.
