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Textured Perovskite/Silicon Tandem Solar Cells Achieving Over 30% Efficiency Promoted by 4-Fluorobenzylamine Hydroiodide
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作者 Jingjing Liu Biao Shi +14 位作者 Qiaojing Xu Yucheng Li Yuxiang Li Pengfei Liu Zetong SunLi Xuejiao Wang Cong Sun Wei Han Diannan Li Sanlong Wang Dekun Zhang Guangwu Li Xiaona Du Ying Zhao Xiaodan Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第9期557-570,共14页
Monolithic textured perovskite/silicon tandem solar cells(TSCs)are expected to achieve maximum light capture at the lowest cost,potentially exhibiting the best power conversion efficiency.However,it is challenging to ... Monolithic textured perovskite/silicon tandem solar cells(TSCs)are expected to achieve maximum light capture at the lowest cost,potentially exhibiting the best power conversion efficiency.However,it is challenging to fabricate high-quality perovskite films and preferred crystal orientation on commercially textured silicon substrates with micrometersize pyramids.Here,we introduced a bulky organic molecule(4-fluorobenzylamine hydroiodide(F-PMAI))as a perovskite additive.It is found that F-PMAI can retard the crystallization process of perovskite film through hydrogen bond interaction between F^(−)and FA^(+)and reduce(111)facet surface energy due to enhanced adsorption energy of F-PMAI on the(111)facet.Besides,the bulky molecular is extruded to the bottom and top of perovskite film after crystal growth,which can passivate interface defects through strong interaction between F-PMA+and undercoordinated Pb^(2+)/I^(−).As a result,the additive facilitates the formation of large perovskite grains and(111)preferred orientation with a reduced trap-state density,thereby promoting charge carrier transportation,and enhancing device performance and stability.The perovskite/silicon TSCs achieved a champion efficiency of 30.05%based on a silicon thin film tunneling junction.In addition,the devices exhibit excellent longterm thermal and light stability without encapsulation.This work provides an effective strategy for achieving efficient and stable TSCs. 展开更多
关键词 Perovskite crystallization (111)preferred orientation Defect passivation Perovskite/silicon tandem solar cells
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Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells
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作者 SUN Haizhi LIU Caichi HAO Qiuyan WANG Lijian 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期141-145,共5页
The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optica... The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrum response and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the Vos and Isc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is not be affected. 展开更多
关键词 silicon oxygen precipitate solar cell ANNEALING
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Improving the UV-light stability of silicon heterojunction solar cells through plasmon-enhanced luminescence downshifting of YVO_(4):Eu^(3+),Bi^(3+)nanophosphors decorated with Ag nanoparticles
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作者 Cheng-Kun Wu Shuai Zou +6 位作者 Chen-Wei Peng Si-Wei Gu Meng-Fei Ni Yu-Lian Zeng Hua Sun Xiao-Hong Zhang Xiao-Dong Su 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第6期212-220,I0007,共10页
The ultraviolet(UV)light stability of silicon heterojunction(SHJ)solar cells should be addressed before large-scale production and applications.Introducing downshifting(DS)nanophosphors on top of solar cells that can ... The ultraviolet(UV)light stability of silicon heterojunction(SHJ)solar cells should be addressed before large-scale production and applications.Introducing downshifting(DS)nanophosphors on top of solar cells that can convert UV light to visible light may reduce UV-induced degradation(UVID)without sacrificing the power conversion efficiency(PCE).Herein,a novel composite DS nanomaterial composed of YVO_(4):Eu^(3+),Bi^(3+)nanoparticles(NPs)and AgNPs was synthesized and introduced onto the incident light side of industrial SHJ solar cells to achieve UV shielding.The YVO_(4):Eu^(3+),Bi^(3+)NPs and Ag NPs were synthesized via a sol-gel method and a wet chemical reduction method,respectively.Then,a composite structure of the YVO_(4):Eu^(3+),Bi^(3+)NPs decorated with Ag NPs was synthesized by an ultrasonic method.The emission intensities of the YVO_(4):Eu^(3+),Bi^(3+)nanophosphors were significantly enhanced upon decoration with an appropriate amount of~20 nm Ag NPs due to the localized surface plasmon resonance(LSPR)effect.Upon the introduction of LSPR-enhanced downshifting,the SHJ solar cells exhibited an~0.54%relative decrease in PCE degradation under UV irradiation with a cumulative dose of 45 k W h compared to their counterparts,suggesting excellent potential for application in UV-light stability enhancement of solar cells or modules. 展开更多
关键词 Downshifting Silver nanoparticles Localized surface plasmon resonance UV-light stability silicon heterojunction solar cells
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Efficiency-loss analysis of monolithic perovskite/silicon tandem solar cells by identifying the patterns of a dual two-diode model’s current-voltage curves 被引量:1
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作者 Yuheng Zeng Zetao Ding +11 位作者 Zunke Liu Wei Liu Mingdun Liao Xi Yang Zhiqin Ying Jingsong Sun Jiang Sheng Baojie Yan Haiyan He Chunhui Shou Zhenhai Yang Jichun Ye 《Journal of Semiconductors》 EI CAS CSCD 2023年第8期68-77,共10页
In this work,we developed a simple and direct circuit model with a dual two-diode model that can be solved by a SPICE numerical simulation to comprehensively describe the monolithic perovskite/crystalline silicon(PVS/... In this work,we developed a simple and direct circuit model with a dual two-diode model that can be solved by a SPICE numerical simulation to comprehensively describe the monolithic perovskite/crystalline silicon(PVS/c-Si)tandem solar cells.We are able to reveal the effects of different efficiency-loss mechanisms based on the illuminated current density-voltage(J-V),semi-log dark J-V,and local ideality factor(m-V)curves.The effects of the individual efficiency-loss mechanism on the tandem cell’s efficiency are discussed,including the exp(V/VT)and exp(V/2VT)recombination,the whole cell’s and subcell’s shunts,and the Ohmic-contact or Schottky-contact of the intermediate junction.We can also fit a practical J-V curve and find a specific group of parameters by the trial-and-error method.Although the fitted parameters are not a unique solution,they are valuable clues for identifying the efficiency loss with the aid of the cell’s structure and experimental processes.This method can also serve as an open platform for analyzing other tandem solar cells by substituting the corresponding circuit models.In summary,we developed a simple and effective methodology to diagnose the efficiency-loss source of a monolithic PVS/c-Si tandem cell,which is helpful to researchers who wish to adopt the proper approaches to improve their solar cells. 展开更多
关键词 monolithic perovskite/silicon tandem solar cell efficiency-loss analysis dual two-diode model SPICE numerical simula-tion
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Analyzing the ZnO and CH_(3)NH_(3)PbI_(3) as Emitter Layer for Silicon Based Heterojunction Solar Cells
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作者 Jasurbek Gulomov Oussama Accouche +2 位作者 Rayimjon Aliev Marc AZAB Irodakhon Gulomova 《Computers, Materials & Continua》 SCIE EI 2023年第1期575-590,共16页
Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper... Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper is to analyze CH_(3)NH_(3)PbI_(3) and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells.CH_(3)NH_(3)PbI_(3) and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor.We propose to combine these two materials since CH_(3)NH_(3)PbI_(3) is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material.The photoelectric parameters of n-CH_(3)NH_(3)PbI_(3)/p-Si,n-ZnO/p-Si,and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness.It has been found that the short circuit current for CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm.Additionally,when the emitter layer thickness is greater than 100 nm,the short circuit current of CH_(3)NH_(3)PbI_(3)/p-Si exceeds that of n-ZnO/p-Si.The optimal emitter layer thickness for n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si was found equal to 80 nm.Using this value,the short-circuit current and the fill factor were estimated around 18.27 mA/cm^(2) and 0.77 for n-CH_(3)NH_(3)PbI_(3)/p-Si and 18.06 mA/cm^(2) and 0.73 for n-ZnO/p-Si.Results show that the efficiency of n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes.These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector. 展开更多
关键词 solar cell CH_(3)NH_(3)PbI_(3) ZNO silicon heterojunction simulation
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Maskless fabrication of quasi-omnidirectional V-groove solar cells using an alkaline solution-based method
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作者 陈兴谦 王燕 +6 位作者 陈伟 刘尧平 邢国光 冯博文 李昊臻 孙纵横 杜小龙 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期236-242,共7页
Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid text... Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells. 展开更多
关键词 V-groove alkaline etching quasi omnidirectionality silicon solar cell
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Emitter layer optimization in heterojunction bifacial silicon solar cells
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作者 Adnan Shariah Feda Mahasneh 《Journal of Semiconductors》 EI CAS CSCD 2022年第12期65-71,共7页
Silicon solar cells continue to dominate the market,due to the abundance of silicon and their acceptable efficiency.The heterojunction with intrinsic thin layer(HIT)structure is now the dominant technology.Increasing ... Silicon solar cells continue to dominate the market,due to the abundance of silicon and their acceptable efficiency.The heterojunction with intrinsic thin layer(HIT)structure is now the dominant technology.Increasing the efficiency of these cells could expand the development choices for HIT solar cells.We presented a detailed investigation of the emitter a-Si:H(n)lay-er of a p-type bifacial HIT solar cell in terms of characteristic parameters which include layer doping concentration,thickness,band gap width,electron affinity,hole mobility,and so on.Solar cell composition:(ZnO/nc-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/nc-Si:H(p)/ZnO).The results reveal optimal values for the investigated parameters,for which the highest computed efficiency is 26.45%when lighted from the top only and 21.21%when illuminated from the back only. 展开更多
关键词 HIT solar cells bifacial solar cells nano-crystalline silicon films gradient doping parameter optimization
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Analysis of an SME using Silicon and Flexible Organic Solar Cells as Replacements for Fossil Fuel Sources of Electricity in UK and Iraq
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作者 Azad Azabany Ari Azabanee +2 位作者 Khalid Khan Mahmood Shah Waqar Ahmed 《Journal of Environmental Science and Engineering(B)》 2016年第4期173-178,共6页
Currently, 86% of the energy originates from fossil fuelsforelectricity. These are expected to run out, causing severe environmental damage threatening future generations. The total impact of Small and Medium Enterpri... Currently, 86% of the energy originates from fossil fuelsforelectricity. These are expected to run out, causing severe environmental damage threatening future generations. The total impact of Small and Medium Enterprises (SMEs) on the economy is significant. Solar cells harness the sun's energy to generate electricity in an environmentally friendly manner. This study compares silicon solar cells to flexible Organic Photovoltaic solar cells (OPV) for electricity energy for a micro-business in the UK and Iraq. It shows that it is feasible to replace existing fossil fuel sources with solar cells in Iraq due to a greater amount of solar radiation striking the earth's surface. Flexible solar cells can replace a proportion of the energy requirements in the UK and a larger proportion in Iraq. Using existing 20% efficient solar cells, 28% and 83% of the energy requirements of the microbusiness can be replaced in UK and Iraq respectively. Assuming 20% efficiency for solar cells placed on windows, 74% and 220% of the energy requirements of UK and Kurdistan can be replaced respectively and the surplus stored. 展开更多
关键词 Energy management silicon solar cells flexible organic solar cells CO2 emissions Iraq United Kingdom.
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Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells 被引量:1
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作者 孙福河 张晓丹 +9 位作者 赵颖 王世峰 韩晓艳 李贵军 魏长春 孙建 侯国付 张德坤 耿新华 熊绍珍 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期855-858,共4页
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber. Through analysis of the... A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a (220) preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD (p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber), respectively. 展开更多
关键词 VHF-PECVD intrinsic microcrystalline silicon solar cells
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Enhanced Photovoltaic Properties for Rear Passivated Crystalline Silicon Solar Cells by Fabricating Boron Doped Local Back Surface Field 被引量:1
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作者 陈楠 SHEN Shuiliang 杜国平 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2017年第6期1323-1328,共6页
In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron dopin... In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF. 展开更多
关键词 crystalline silicon solar cells rear passivation local back surface field dopingconcentration
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Beyond Lambertian light trapping for large-area silicon solar cells:fabrication methods 被引量:1
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作者 Jovan Maksimovic Jingwen Hu +7 位作者 Soon Hock Ng Tomas Katkus Gediminas Seniutinas Tatiana Pinedo Rivera Michael Stuiber Yoshiaki Nishijima Sajeev John Saulius Juodkazis 《Opto-Electronic Advances》 SCIE EI CAS 2022年第9期14-25,共12页
Light trapping photonic crystal(PhC)patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%,for light-to-electrical power conversion with a single j... Light trapping photonic crystal(PhC)patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%,for light-to-electrical power conversion with a single junction cell.This is beyond the efficiency limit implied by the Lambertian limit of ray trapping~29%.The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap.We compare two different methods for surface patterning,that can be extended to large area surface patterning:1)laser direct write and 2)step-&-repeat 5×reduction projection lithography.Large area throughput limitations of these methods are compared with the established elec-tron beam lithography(EBL)route,which is conventionally utilised but much slower than the presented methods.Spec-tral characterisation of the PhC light trapping is compared for samples fabricated by different methods.Reflectance of Si etched via laser patterned mask was~7%at visible wavelengths and was comparable with Si patterned via EBL made mask.The later pattern showed a stronger absorbance than the Lambertian limit6. 展开更多
关键词 silicon solar cells laser ablation light trapping Lambertian limit
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Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells 被引量:2
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作者 李涛 王文静 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第2期166-169,共4页
The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-ph... The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15 Ω/. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters. 展开更多
关键词 Calculated and Experimental Research of Sheet Resistances of Laser-Doped silicon solar cells
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Detection of finger interruptions in silicon solar cells using photoluminescence imaging
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作者 Lei Zhang Peng Liang +1 位作者 Hui-Shi Zhu Pei-De Han 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期554-559,共6页
Finger interruptions are common problems in screen printed solar cells, resulting in poor performance in efficiency because of high effective series resistance. Electroluminescence(EL) imaging is typically used to i... Finger interruptions are common problems in screen printed solar cells, resulting in poor performance in efficiency because of high effective series resistance. Electroluminescence(EL) imaging is typically used to identify interrupted fingers. In this paper, we demonstrate an alternative method based on photoluminescence(PL) imaging to identify local series resistance defects, with a particular focus on finger interruptions. Ability to detect finger interruptions by using PL imaging under current extraction is analyzed and verified. The influences of external bias control and illumination intensity on PL images are then studied in detail. Finally, in comparison with EL imaging, the using of PL imaging to identify finger interruptions possesses the prominent advantages: in PL images, regions affected by interrupted fingers show higher luminescence intensity, while regions affected by recombination defects show lower luminescence intensity. This inverse signal contrast allows PL imaging to more accurately identify the defect types. 展开更多
关键词 silicon solar cells LUMINESCENCE DEFECTS series resistance
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Review on Metallization Approaches for High-Efficiency Silicon Heterojunction Solar Cells
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作者 Yulian Zeng Chen-Wei Peng +4 位作者 Wei Hong Shan Wang Cao Yu Shuai Zou Xiaodong Su 《Transactions of Tianjin University》 EI CAS 2022年第5期358-373,共16页
Crystalline silicon(c-Si)heterojunction(HJT)solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells,and many efforts in transferring this technology to high... Crystalline silicon(c-Si)heterojunction(HJT)solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells,and many efforts in transferring this technology to high-volume manufacturing in the photovoltaic(PV)industry are currently ongoing.Metallization is of vital importance to the PV performance and long-term reliability of HJT solar cells.In this review,we summarize the development status of metallization approaches for highefficiency HJT solar cells.For conventional screen printing technology,to avoid the degradation of the passivation properties of the amorphous silicon layer,a low-temperature-cured(<250℃)paste and process are needed.This process,in turn,leads to high line/contact resistances and high paste costs.To improve the conductivity of electrodes and reduce the metallization cost,multi-busbar,fine-line printing,and low-temperature-cured silver-coated copper pastes have been developed.In addition,several potential metallization technologies for HJT solar cells,such as the Smart Wire Contacting Technology,pattern transfer printing,inkjet/FlexTrailprinting,and copper electroplating,are discussed in detail.B ased on the summary,the potential and challenges of these metallization technologies for HJT solar cells are analyzed. 展开更多
关键词 silicon solar cells Passivating-contact HETEROJUNCTION METALLIZATION ELECTRODE
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The 18.3% Silicon Solar Cells with Nano-Structured Surface and Rear Emitter
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作者 Jun-Na Zhang Lei Wang +3 位作者 Zhun Dai Xun Tang You-Bo Liu De-Ren Yang 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第2期122-125,共4页
A nano-structured surface is formed on the pyramid structure of n-type silicon solar cells by size-controlled silver nano-particle assisted etching. Such a nano-structure creates a front average weighted reflectance o... A nano-structured surface is formed on the pyramid structure of n-type silicon solar cells by size-controlled silver nano-particle assisted etching. Such a nano-structure creates a front average weighted reflectance of less than 2.5% in the 300-1200nm range due to the broadband reflection suppression. The sodium hydroxide is used to obtain the low-area surface by post-etching the nano-structure, thus the severe carrier recombination associated with the nano-structured surface could be reduced. After emitter forming, screen printing and firing by means of the industrial fabrication protocol, an 18.3%-efficient nano-structured silicon solar cell with rear emitter is fabricated. The process of fabricating the solar cells matches well with industrial manufacture and shows promising prospects. 展开更多
关键词 The 18.3 silicon solar cells with Nano-Structured Surface and Rear Emitter
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Simulations of Heterojunction and Tandem Solar Cells Based on 3C Silicon Carbide
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作者 Kabe Moyème Lare Yendoubé +2 位作者 Ottaviani Laurent Pasquinelli Marcel Toure Moussa 《Journal of Applied Mathematics and Physics》 2020年第11期2402-2415,共14页
In order to improve the efficiency of solar cells based on cubic silicon carbide (3C-SiC), one heterojunction solar cell and two tandem structures were simulated under AM1.5 illumination using SCAPS software. The cell... In order to improve the efficiency of solar cells based on cubic silicon carbide (3C-SiC), one heterojunction solar cell and two tandem structures were simulated under AM1.5 illumination using SCAPS software. The cells’ performances were studied according to the thickness of the silicon carbide layers. Simulation results allowed to achieve an efficiency of 22.03% with a tandem junction structure using an optimal thickness of 3C-SiC layer. 展开更多
关键词 Crystalline silicon Carbide 3C-SiC SIMULATION Tandem solar cells
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One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution 被引量:2
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作者 汤叶华 周春兰 +4 位作者 周肃 赵彦 王文静 费建明 曹红彬 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2013年第1期102-108,I0004,共8页
Currently, a conventional two-step method has been used to generate black silicon (BS) surfaces on silicon substrates for solar cell manufacturing. However, the performances of the solar cell made with such surface ... Currently, a conventional two-step method has been used to generate black silicon (BS) surfaces on silicon substrates for solar cell manufacturing. However, the performances of the solar cell made with such surface generation method are poor, because of the high surface recombination caused by deep etching in the conventional surface generation method for BS. In this work, a modified wet chemical etching solution with additives was developed. A homogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature. The BS layer had low reflectivity and shallow etching depth. The additive in the etch solution performs the function of pH-modulation. After 16-min etching, the etching depth in the samples was approximately 200 nm, and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%. BS solar cells were fabricated in the production line. The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination. An efficiency of 15.63% for the modified etching BS solar cells was achieved on a large area, p- type single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88% fill factor. 展开更多
关键词 Modified etching solution Black silicon surface Shallower etching depth Blacksilicon solar cell
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Electrical conductivity and viscosity of cryolite electrolytes for solar grade silicon(Si-SoG) electrowinning 被引量:3
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作者 Michal KORENKO Zuzana VASKOV +3 位作者 Frantiek IMKO Michal IMURDA Marta AMBROV 石忠宁 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2014年第12期3944-3948,共5页
Electrical conductivity of molten binary and ternary mixtures based on the system NaF-AlF3-SiO2 was investigated by means of a tube–cell (made of pyrolytic boron nitride) with stationary electrodes. Viscosity of th... Electrical conductivity of molten binary and ternary mixtures based on the system NaF-AlF3-SiO2 was investigated by means of a tube–cell (made of pyrolytic boron nitride) with stationary electrodes. Viscosity of the binary system Na3AlF6-SiO2 was measured by computerized torsion pendulum method. It was found that conductivity and viscosity varied linearly with temperature in all investigated mixtures. Obtained content dependence of electrical conductivity (isotherms) was divided into two parts. First, one represented the content region up to 10%(mole fraction) of SiO2;second, the region was with a higher content of SiO2 (from 10%up to 40%). While the conductivity considerably decreased with content of SiO2 in the second part; it surprisingly rose in the low content range. A small addition of SiO2 to the molten cryolite (up to 10%) could slightly increase viscosity, but had no influence on the slope of this dependence since it is responsible for a glassy-networks formation in the melt. Further addition of SiO2 to the molten cryolite had a huge effect on the viscosity. 展开更多
关键词 electrical conductivity VISCOSITY solar grade silicon molten salts molten cryolite-silica melts
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Influence of texture feature size on spherical silicon solar cells 被引量:3
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作者 HAYASHI Shota MINEMOTO Takashi +1 位作者 TAKAKURA Hideyuki HAMAKAWA Yoshihiro 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期115-120,共6页
The effects of surface texturing on spherical silicon solar cells were investigated. Surface texturing for spherical Si solar cells was prepared by immersing p-type spherical Si crystals in KOH solution with stirring.... The effects of surface texturing on spherical silicon solar cells were investigated. Surface texturing for spherical Si solar cells was prepared by immersing p-type spherical Si crystals in KOH solution with stirring. Two kinds of texture feature sizes (1 and 5 μm pyramids) were prepared by changing stirring speed. After fabrication through our baseline processes, these cells were evaluated by solar cell performance and external quantum efficiency. The cell with 1 and 5 μm pyramids shows the short circuit current density (Jsc) value of 31.9 and 33.2 mA·cm-2, which is 9% and 13% relative increase compared to the cell without texturing. Furthermore, the cell with 5 μm pyramids has a higher open-circuit voltage (0.589 V) than the cell with 1 μm pyramids (0.577 V). As a result, the conversion efficiency was improved from 11.4% for the cell without texturing to 12.1% for the cell with 5 μm pyramids. 展开更多
关键词 solar cell spherical silicon TEXTURING alkali etching
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Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations 被引量:1
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作者 姜帅 贾锐 +4 位作者 陶科 侯彩霞 孙恒超 于志泳 李勇滔 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第8期481-490,共10页
Interdigitated back contact(IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrys... Interdigitated back contact(IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance. 展开更多
关键词 polycrystalline silicon SIO2 solar cell PASSIVATION simulation IBC
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