Application of response surface method for optimal transfer conditions of multi-layer ceramic capacitor alignment system

The multi-layer ceramic capacitor (MLCC) alignment system aims at the inter-process automation between the first and the second plastic processes.As a result of testing performance verification of MLCC alignment system,the average alignment rates are 95% for 3216 chip,88.5% for 2012 chip and 90.8% for 3818 chip.The MLCC alignment system can be accepted for practical use because the average manual alignment is just 80%.In other words,the developed MLCC alignment system has been upgraded to a great extent,compared with manual alignment.Based on the successfully developed MLCC alignment system,the optimal transfer conditions have been explored by using RSM.The simulations using ADAMS has been performed according to the cube model of CCD.By using MiniTAB,the model of response surface has been established based on the simulation results.The optimal conditions resulted from the response optimization tool of MiniTAB has been verified by being assigned to the prototype of MLCC alignment system.

Fabrication and modeling of multi-layer metal–insulator-metal capacitors

This paper presents the fabrication and modeling for capacitance-voltage characteristics of multi-layer metal-insulator-metal capacitors. It is observed that, due the applied electric field, the effective dielectric constant of the stack was increased due to the accumulation of charges at the interface of high-to-low conductance materials. It is observed that the Maxwell-Wagner polarization is dominant at low frequencies （〈10 kHz）. By introducing carrier tunneling probability of the dielectric stack, the model presented in this paper shows a good agreement with experimental results. The presented model indicates that the nonlinearity can be suppressed by choosing the similar permittivity dielectric materials for fabrication of multilayer metal insulator metal capacitors.

Effect of Au film pre-deposited at different durations as inner electrode on the electrical properties and interface microstructures of Na_2O-PbO-Nb_2O_5-SiO_2 multi-layer glass-ceramic capacitors

To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na20-PbO-Nb2O5-SiO2 multilayer glass-ceramic capacitors, Au films pre-deposited at different time were prepared by DC magnetron sputtering. Compared with the single paste electrode structure, samples with Au films pre-deposited from 6 to 18 min have the consistent perfor- mance to effectively improve the electrical properties of the capacitors, resulting in the doubled breakdown strength, an increase of equivalent capacitance by 22% and a decrease of leakage current by an order of magnitude. SEM observations indicate that the Au films with deposition time from 6 to 18 min would all help the formation of a dense electrode/dielectric interface and inhibit the diffusion of Ag. The results reveal that Au film pre-deposited for 6 min as inner electrode was sufficient to improve the interface microstructure and therefore to inhibit the Ag diffusion and enhance the overall performance of the multi-layer glass-ceramic capacitors.

基于电容法的原油高含水测试仿真研究

针对原油高含水率难于测量的问题,设计了一种新型多层筒式结构电容传感器。通过对被测介质的介电特性进行研究,分析了多层筒式电容传感器的各结构参数对系统灵敏度的影响和测量原理,推导出高含水率与电容的计算模型,并用Comsol Multiphysics软件对模型进行静电场仿真。从二维角度,对电容传感器的几何参数进行研究。分析了泡径对传感器响应以及油泡接触方式的影响,证明了多层筒式电容传感器对高含水率有较好的响应特性。当油泡内径小于0. 5 mm时,传感器响应特性较低。当油泡同时与两极板接触时,相比其他三种接触方式有较为明显的变化。该研究验证了多层筒式电容传感器在90%～100%高含水率测量中的有效性和可行性。

Experimental analysis of high temperature capacitance variance of MLCC

High temperature capacitance variance of multi-layer ceramic capacitor （MLCC） is researched.Combined with the characteristics of MLCC,the application of MLCC in fuze is proposed,and the temperature stability of MLCC is also discussed.The experimental results indicate that the capacitance of low frequency MLCC is largely affected by temperature.

TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al_2O_3 and multi layers of TiN film structure

A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact of the deposition process and post treatment condition on the MIS capacitor＇s time-dependent dielectric breakdown （TDDB） performance is also studied. With an optimized process, it is confirmed by Auger electron spectroscopy and secondary ion mass spectrometry analysis that the Al（CH3）3/O3-based ALD Al2O3 dielectric film is carbon free and the hydrogen content is as low as 9 × 1019 cm-3. The top electrode TiN is obtained by multi-layered TiCl4/NH3 CVD deposited TiN followed by 120 s post NH3 treatment after each layer. This has higher diffusion barrier in preventing impurity diffusion through TiN into the Al2O3 dielectric due to its smaller grain size. As shown in energy dispersive X-ray analysis, there is no chlorine residue in the MIS capacitor structure. The leakage current of the capacitor is lower than 1 × 10-12 A/cm2. No early failures under stress conditions are found in its TDDB test. The novel MIS capacitor is proven to have excellent reliability for advanced DRAM technology.