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The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
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作者 王玉冰 尹伟红 +5 位作者 韩勤 杨晓红 叶焓 王帅 吕倩倩 尹冬冬 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第6期84-86,共3页
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP). By fabricating a multilayer-gra... We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP). By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger's mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene. 展开更多
关键词 The Nonlinear Electronic Transport in multilayer Graphene on Silicon-on-Insulator substrates
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