This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission wit...This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling （LVDS） technique. A multiplexer （MUX） and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 ： 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560μm2, demonstrating low power consumption and adjustable driving capability.展开更多
基金supported by the National Science and Technology Support Program of China(No.2012BAI13B07)the National High-Tech Research and Development Program of China(No.2013AA014101)
文摘This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling （LVDS） technique. A multiplexer （MUX） and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 ： 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560μm2, demonstrating low power consumption and adjustable driving capability.
