We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复...钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复性差、效率低等问题。针对n-i-p型平板结构PSCs的制备进行了系统的研究,包括导电基底的选择、钙钛矿制备工艺参数的优化以及电池存储环境。结果证明,上述参数对于电池均具有重要影响,并结合扫描电子显微镜、X射线衍射、吸收光谱分析了原因。在最优工艺条件下(掺锡氧化铟基底,PbI_(2)退火温度70℃(1 min),胺盐溶液滴加后静置时间不超过5 s,存储湿度4.5%),器件平均效率达到21.85%,最高效率达到23.47%,迟滞可忽略,具有良好的可重复性。研究结果可为制备重复性好、光电转换效率高的PSCs提供科学支撑。展开更多
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
文摘钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复性差、效率低等问题。针对n-i-p型平板结构PSCs的制备进行了系统的研究,包括导电基底的选择、钙钛矿制备工艺参数的优化以及电池存储环境。结果证明,上述参数对于电池均具有重要影响,并结合扫描电子显微镜、X射线衍射、吸收光谱分析了原因。在最优工艺条件下(掺锡氧化铟基底,PbI_(2)退火温度70℃(1 min),胺盐溶液滴加后静置时间不超过5 s,存储湿度4.5%),器件平均效率达到21.85%,最高效率达到23.47%,迟滞可忽略,具有良好的可重复性。研究结果可为制备重复性好、光电转换效率高的PSCs提供科学支撑。
