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Influence of Target Temperature on Cemented Carbides for Dual Ion Implantation
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作者 赵青 李宏福 童洪辉 《Plasma Science and Technology》 SCIE EI CAS CSCD 2006年第6期690-692,共3页
A Cemented Carbide material was implanted with dual nitrogen plus tantalum ions at temperatures of 100℃ and 400℃ and a dose of 8× 10^17 ions cm^-2. The thickness of the implanted layers increased by about an or... A Cemented Carbide material was implanted with dual nitrogen plus tantalum ions at temperatures of 100℃ and 400℃ and a dose of 8× 10^17 ions cm^-2. The thickness of the implanted layers increased by about an order of magnitude when the temperature was elevated from 100℃ to 400℃. Higher surface hardness was also obtained in the high temperature implantation. X-ray diffraction showed the presence of nitrides of tantalum and tungsten in the implanted surface. 展开更多
关键词 cemented carbide Ta+n ion implantation TEMPERATURE
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