A 2-yr field experiment was conducted on a calcareous alluvial soil with four summer maize intercropping systems at Shangzhuang Experiment Station （116.3°E, 39.9°N） in the North China Plain. The objective ...A 2-yr field experiment was conducted on a calcareous alluvial soil with four summer maize intercropping systems at Shangzhuang Experiment Station （116.3°E, 39.9°N） in the North China Plain. The objective was to determine nitrate leaching from intercropping systems involving maize （Zea mays L.）： sole maize （CK）, maize ＋ soybean （CST）, maize ＋ groundnut （CGT）, maize ＋ ryegrass （CHM）, and maize ＋ alfalfa （CMX）. Intercropping greatly reduced nitrate accumulation in the 100-200 cm soil layers compared with maize monoculture. Nitrate accumulation under intercropping systems decreased significantly at the 140-200 cm soil depth; the accumulation varied in the order CK〉CST〉CMX〉CHM〉CGT. However, compared to the CK treatment, nitrate leaching losses during the maize growing period were reduced by 20.9- 174.8 （CGT）, 35.2-130.8 （CHM）, 60.4-122.0 （CMX）, and 30.6-82.4 kg ha-1 （CST）. The results also suggested that intereropping is an effective way to reduce nitrogen leaching in fields with N fertilizer over-dose.展开更多
AIM: To investigate dose-dependent effects of N-methylD-aspartate(NMDA) on retinal and optic nerve morphology in rats.METHODS: Sprague Dawley rats, 180-250 g in weight were divided into four groups. Groups 1, 2, 3 and...AIM: To investigate dose-dependent effects of N-methylD-aspartate(NMDA) on retinal and optic nerve morphology in rats.METHODS: Sprague Dawley rats, 180-250 g in weight were divided into four groups. Groups 1, 2, 3 and 4 were intravitreally administered with vehicle and NMDA at the doses 80, 160 and 320 nmol respectively. Seven days after injection, rats were euthanized, and their eyes were taken for optic nerve toluidine blue and retinal hematoxylin and eosin stainings. The TUNEL assay was done for detecting apoptotic cells.RESULTS: All groups treated with NMDA showed significantly reduced ganglion cell layer(GCL) thickness within inner retina, as compared to control group. Group NMDA 160 nmol showed a significantly greater GCL thickness than the group NMDA 320 nmol. Administration of NMDA also resulted in a dose-dependent decrease in the number of nuclei both per 100 μm GCL length and per 100 μm2 of GCL. Intravitreal NMDA injection caused dosedependent damage to the optic nerve. The degeneration of nerve fibres with increased clearing of cytoplasm was observed more prominently as the NMDA dose increased. In accordance with the results of retinal morphometry analysis and optic nerve grading, TUNEL staining demonstrated NMDA-induced excitotoxic retinal injury in a dose-dependent manner.CONCLUSION: Our results demonstrate dose-dependent effects of NMDA on retinal and optic nerve morphology in rats that may be attributed to differences in the severity of excitotoxicity and oxidative stress. Our results also suggest that care should be taken while making dose selections experimentally so that the choice might best uphold study objectives.展开更多
we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsi...we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.展开更多
基金the Key Technologies R&D Program of China during the 11th Five-Year Plan period (2007BAD89B01)the Key Technologies R&D Program of China during the 12th Five-Year Plan period(2011BAD16B15)the Project of Collaboration between Henan Province and Chinese Academy of Agricultural Sciences Program (102106000034)
文摘A 2-yr field experiment was conducted on a calcareous alluvial soil with four summer maize intercropping systems at Shangzhuang Experiment Station （116.3°E, 39.9°N） in the North China Plain. The objective was to determine nitrate leaching from intercropping systems involving maize （Zea mays L.）： sole maize （CK）, maize ＋ soybean （CST）, maize ＋ groundnut （CGT）, maize ＋ ryegrass （CHM）, and maize ＋ alfalfa （CMX）. Intercropping greatly reduced nitrate accumulation in the 100-200 cm soil layers compared with maize monoculture. Nitrate accumulation under intercropping systems decreased significantly at the 140-200 cm soil depth; the accumulation varied in the order CK〉CST〉CMX〉CHM〉CGT. However, compared to the CK treatment, nitrate leaching losses during the maize growing period were reduced by 20.9- 174.8 （CGT）, 35.2-130.8 （CHM）, 60.4-122.0 （CMX）, and 30.6-82.4 kg ha-1 （CST）. The results also suggested that intereropping is an effective way to reduce nitrogen leaching in fields with N fertilizer over-dose.
基金Supported by Universiti Teknologi MARA [No.600-IRMI/MYRA5/3/BESTARI (004/2017) No.600IRMI/DANA5/3/LESTARI (0076/2016) No.600-IRMI/ My RA5/3/LESTARI (0088/2016)]
文摘AIM: To investigate dose-dependent effects of N-methylD-aspartate(NMDA) on retinal and optic nerve morphology in rats.METHODS: Sprague Dawley rats, 180-250 g in weight were divided into four groups. Groups 1, 2, 3 and 4 were intravitreally administered with vehicle and NMDA at the doses 80, 160 and 320 nmol respectively. Seven days after injection, rats were euthanized, and their eyes were taken for optic nerve toluidine blue and retinal hematoxylin and eosin stainings. The TUNEL assay was done for detecting apoptotic cells.RESULTS: All groups treated with NMDA showed significantly reduced ganglion cell layer(GCL) thickness within inner retina, as compared to control group. Group NMDA 160 nmol showed a significantly greater GCL thickness than the group NMDA 320 nmol. Administration of NMDA also resulted in a dose-dependent decrease in the number of nuclei both per 100 μm GCL length and per 100 μm2 of GCL. Intravitreal NMDA injection caused dosedependent damage to the optic nerve. The degeneration of nerve fibres with increased clearing of cytoplasm was observed more prominently as the NMDA dose increased. In accordance with the results of retinal morphometry analysis and optic nerve grading, TUNEL staining demonstrated NMDA-induced excitotoxic retinal injury in a dose-dependent manner.CONCLUSION: Our results demonstrate dose-dependent effects of NMDA on retinal and optic nerve morphology in rats that may be attributed to differences in the severity of excitotoxicity and oxidative stress. Our results also suggest that care should be taken while making dose selections experimentally so that the choice might best uphold study objectives.
基金supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201205)the National Natural Science Foundation of China(Grant No.61106103)
文摘we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.
文摘蒙特卡罗方法是目前准确的吸收剂量率计算方法,但其较长的模拟耗时阻碍了它在工业钴源辐射加工和辐照实验中的应用。模拟耗时、模拟精度以及模拟值与实测值的相对偏差是表征蒙特卡罗计算效率的重要指标。针对8.4 PBq的单板钴源辐照装置,讨论了并行线程数、记数方法、记数栅元尺寸、γ致电子的处理方式和截断能5种参数对蒙特卡罗程序MCNP吸收剂量率计算效率的影响。利用实验测量结合模拟试算的方法,给出了在保证一定精度和相对偏差前提下,使得模拟耗时最少的参数组合,提高了MCNP计算效率。结果如下:超线程模式下的并行计算、*F6记数方法、栅元边长为1 cm、γ输运模式、γ截断能为100 ke V。
