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Influence of Target Temperature on Cemented Carbides for Dual Ion Implantation
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作者 赵青 李宏福 童洪辉 《Plasma Science and Technology》 SCIE EI CAS CSCD 2006年第6期690-692,共3页
A Cemented Carbide material was implanted with dual nitrogen plus tantalum ions at temperatures of 100℃ and 400℃ and a dose of 8× 10^17 ions cm^-2. The thickness of the implanted layers increased by about an or... A Cemented Carbide material was implanted with dual nitrogen plus tantalum ions at temperatures of 100℃ and 400℃ and a dose of 8× 10^17 ions cm^-2. The thickness of the implanted layers increased by about an order of magnitude when the temperature was elevated from 100℃ to 400℃. Higher surface hardness was also obtained in the high temperature implantation. X-ray diffraction showed the presence of nitrides of tantalum and tungsten in the implanted surface. 展开更多
关键词 cemented carbide Ta+n ion implantation TEMPERATURE
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A Preliminary Study on DNA Mutation Induction of Maize Pollen Implanted by Low Energy N^+ Beam 被引量:3
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作者 程备久 阚显照 +1 位作者 朱苏文 李培金 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第1期659-664,共6页
The maize pollens were implanted with seven different doses of 30 keV N+ beam respectively, The genomic DNA polymorphism from treated pollens were analyzed with 104 primers by using RAPD respectively. The results sho... The maize pollens were implanted with seven different doses of 30 keV N+ beam respectively, The genomic DNA polymorphism from treated pollens were analyzed with 104 primers by using RAPD respectively. The results showed that N^+ beam-induced mutation of maize pollens can result in the change of their DNA bases. The mutation is not properly random and its frequency increases with a rise in 30 keV N+ beam doses. It is conformed with A-G transformation, which is one of the most important factors in DNA bases induced by N+ beam. 展开更多
关键词 DnA A Preliminary Study on DnA Mutation Induction of Maize Pollen Implanted by Low Energy n BEAM
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Multi-effects and Mechanism of Broad Beau M_1 Root-tip Cells Implanted by Low Energy N^+ Beam
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作者 徐谷峰 顾月华 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第3期835-840,共6页
Broad beans were divided into six groups and implanted with N+ beam of 30 KeV, 8 × 1016/cm2 per time for various radiating times respectively. Besides the statistics of its vigor of germination, the M1 root-tip c... Broad beans were divided into six groups and implanted with N+ beam of 30 KeV, 8 × 1016/cm2 per time for various radiating times respectively. Besides the statistics of its vigor of germination, the M1 root-tip cells of these broad beans were systematically analyzed on their changes in mitotic percentage, morphology and behavior of chromosomes, along with the structure o f cytoskeletons, including microtubule and intermediate filament. Based on all results of these studies, our opinions have been expressed in the report on the mechanism of low-energy N+ beams effecting on higher dicotyledons such as broad beau. 展开更多
关键词 BEAM Multi-effects and Mechanism of Broad Beau M1 Root-tip Cells Implanted by Low Energy n
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