期刊文献+
共找到8篇文章
< 1 >
每页显示 20 50 100
N,P掺杂型C@Mo2C催化剂的制备及其催化CO2加氢反应研究 被引量:3
1
作者 耿文浩 刘飞 +2 位作者 韩寒 肖林飞 吴伟 《燃料化学学报》 EI CAS CSCD 北大核心 2017年第4期458-467,共10页
以三聚氰胺苯甲酸盐为碳源和氮源、以三聚氰胺磷钼酸盐为钼源、磷源和氮源,采用程序升温的方法制备了系列N,P掺杂型C@Mo_2C催化剂。采用XRD、SEM、TEM和XPS等对催化剂的结构、形貌和表面特性进行了表征,研究了三聚氰胺苯甲酸盐中n(三聚... 以三聚氰胺苯甲酸盐为碳源和氮源、以三聚氰胺磷钼酸盐为钼源、磷源和氮源,采用程序升温的方法制备了系列N,P掺杂型C@Mo_2C催化剂。采用XRD、SEM、TEM和XPS等对催化剂的结构、形貌和表面特性进行了表征,研究了三聚氰胺苯甲酸盐中n(三聚氰胺)/n(苯甲酸)、前驱体中n(C)/n(Mo)等因素对所制备催化剂的结构及其在二氧化碳加氢反应中催化性能的影响。在反应温度为220℃、反应压力为3.0 MPa、空速为3 600 m L/(g·h)的条件下,在N,P掺杂型C@Mo_2C的催化作用下,CO_2转化率可以达到12.2%,此时产物中CH_3OH的选择性达到52.2%。 展开更多
关键词 n p掺杂型C@Mo2C β-M o2C CO2加氢 甲醇
下载PDF
木质基N,P共掺杂氧化石墨烯改性泡沫炭制备及电容去离子性能研究
2
作者 孔祥鑫 张坤 +2 位作者 吴振威 李伟 刘守新 《功能材料》 CAS CSCD 北大核心 2024年第6期6026-6034,共9页
以落叶松木屑为原料,磷酸二氢铵(NH_(4)H_(2)PO_(4))为掺杂剂,氧化石墨烯(GOs)为改性剂,经过液化、树脂化、发泡、炭化以及CO_(2)活化制备出木质基N、P共掺杂氧化石墨烯改性泡沫炭(N,P-GCF)。采用SEM、XRD、Raman、XPS、接触角测量仪分... 以落叶松木屑为原料,磷酸二氢铵(NH_(4)H_(2)PO_(4))为掺杂剂,氧化石墨烯(GOs)为改性剂,经过液化、树脂化、发泡、炭化以及CO_(2)活化制备出木质基N、P共掺杂氧化石墨烯改性泡沫炭(N,P-GCF)。采用SEM、XRD、Raman、XPS、接触角测量仪分别对N,P-GCF的表面形态、晶体结构、化学性质、亲水性能进行分析,通过改变NH_(4)H_(2)PO_(4)的添加量探究其对泡沫炭孔结构、电化学性能及电容去离子性能(CDI)的影响。结果表明:经GOs改性与NH_(4)H_(2)PO_(4)掺杂后,孔泡尺寸下降,无序性提高。N,P-GCF具有分级孔结构。当NH_(4)H_(2)PO_(4)掺杂量为2 g时,具有最高的比表面积(2684.11 m^(2)·g^(-1))、总孔容(1.42 cm^(3)·g^(-1))和介孔率(49.45%),N、P质量分数分别为2.48%和3.46%。N元素主要以N-5、N-6、N-X形式存在,P元素主要为P-C、P-N。相比于CF,N,P-GCF2.0具有优异的润湿性及力学性能。在1 mol·L^(-1)NaCl电解液的三电极体系中,1 A·g^(-1)的电流密度时N,P-GCF2.0的比电容为256.48 F·g^(-1),当电流密度增加至15 A·g^(-1)时,比电容保持率达72.51%。在500 mg·L^(-1)的初始NaCl溶液、1.2 V的工作电压下,N,P-GCF2.0具有最佳脱盐能力(29.97 mg·g^(-1))及盐吸附速率(1.84 mg·g^(-1)·min^(-1)),10次循环后脱盐能力保留率为90.12%,具有较好的循环稳定性。 展开更多
关键词 木质基 n p掺杂 氧化石墨烯 泡沫炭 电容去离子
下载PDF
Organic Light-Emitting Diodes by Doping Liq into an Electron Transport Layer 被引量:1
3
作者 徐维 鲁富翰 +3 位作者 蒋雪茵 张志林 朱文清 徐贵 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期33-38,共6页
Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium (Liq) doped into 4' 7- diphyenyl-1,10-phenanthroline (BPhen) as ETL and a p-doping tr... Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium (Liq) doped into 4' 7- diphyenyl-1,10-phenanthroline (BPhen) as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane (F4- TCNQ) doped into 4,4′, 4″-tris (3-methylphenylphenylamono) triphe- nylamine (m-MTDATA) are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping (BPhen:33wt% Liq) layer as an electron transport layer (ETL) and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer (HTL). Compared with the control device (without doping) , the current efficiency and power efficiency of the most efficient device (device C) are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone. 展开更多
关键词 p-I-n n-DOpInG current efficiency electron transport COnDUCTIVITY
下载PDF
甲苯胺蓝自组装的N,P,S共掺杂多孔碳电催化氧化NADH
4
作者 翟秀荣 李永红 +2 位作者 李继森 岳呈阳 雷晓武 《中山大学学报(自然科学版)》 CAS CSCD 北大核心 2019年第1期120-125,共6页
氧化还原介质甲苯胺蓝(TBO)自组装到N,P,S共掺杂多孔碳(N,P,S@PC)表面,制备了一种新的电化学复合物(N,P,S@PC-TBO)。N,P,S@PC和N,P,S@PC-TBO复合物通过扫描电镜进行表征,两者表面形貌有明显的不同。N,P,S@PC-TBO复合物用来修饰玻碳(GC)... 氧化还原介质甲苯胺蓝(TBO)自组装到N,P,S共掺杂多孔碳(N,P,S@PC)表面,制备了一种新的电化学复合物(N,P,S@PC-TBO)。N,P,S@PC和N,P,S@PC-TBO复合物通过扫描电镜进行表征,两者表面形貌有明显的不同。N,P,S@PC-TBO复合物用来修饰玻碳(GC)电极,具有很高的导电性能。通过循环伏安和安培实验表征N,P,S@PC-TBO/GC电极的电催化行为。实验结果表明,N,P,S@PC-TBO/GC电极具有N,P,S@PC和TBO两者电催化氧化NADH的协同效应。N,P,S@PC-TBO/GC电极检测NADH的线性范围为1×10^(-6)-2×10^(-3)mol/L,检测限为3×10^(-7)mol/L (信/噪=3),响应时间为2 s。因此,制备的N,P,S@PC-TBO/GC电极为NADH的检测提供了较好平台。 展开更多
关键词 n p S共掺杂多孔碳 甲苯胺蓝 电催化氧化 nADH 协同效应
下载PDF
Prediction of Breakdown Voltage of Asymmetric Linearly-Graded Junction by Equivalent Doping Profile Transformation Method
5
作者 何进 张兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第2期183-187,共5页
This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage a... This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations. 展开更多
关键词 p n junction asymmetric linearly graded junction breakdown voltage depletion layer extension equivalent doping profile transformation
下载PDF
Modulating the microenvironment structure of single Zn atom:ZnN_(4)P/C active site for boosted oxygen reduction reaction 被引量:2
6
作者 Syed Shoaib Ahmad Shah Tayyaba Najam +3 位作者 Jiao Yang Muhammad Sufyan Javed Lishan Peng Zidong Wei 《Chinese Journal of Catalysis》 SCIE EI CAS CSCD 2022年第8期2193-2201,共9页
The electronic structure of catalytic active sites can be influenced by modulating the coordination bonding of the central single metal atom,but it is difficult to achieve.Herein,we reported the single Zn-atom incorpo... The electronic structure of catalytic active sites can be influenced by modulating the coordination bonding of the central single metal atom,but it is difficult to achieve.Herein,we reported the single Zn-atom incorporated dual doped P,N carbon framework(Zn-N_(4)P/C)for ORR via engineering the surrounding coordination environment of active centers.The Zn-N_(4)P/C catalyst exhibited comparable ORR activity(E_(1/2)=0.86 V)and significantly better ORR stability than that of Pt/C catalyst.It also shows respectable performance in terms of maximum peak power density(249.6 mW cm^(-2)),specific capacitance(779 mAh g^(-1)),and charge-discharge cycling stability for 150 hours in Zn-air battery.The high catalytic activity is attributed to the uniform active sites,tunable electronic/geometric configuration,optimized intrinsic activity,and faster mass transfer during ORR-pathway.Further,theoretical results exposed that the Zn-N_(4)P configuration is more electrochemically active as compared to Zn-N_(4) structure for the oxygen reduction reaction. 展开更多
关键词 n- p-doping Oxygen reduction reaction Zn-air battery Single-atom catalyst Microenvironment modulation
下载PDF
分级多孔N,P共掺杂rGO改性隔膜增强锂硫电池的循环稳定性 被引量:5
7
作者 陈锋 程晓琴 +1 位作者 赵振新 王晓敏 《化学学报》 SCIE CAS CSCD 北大核心 2021年第7期941-947,共7页
多硫化物(LiPSs)的穿梭效应和低硫利用率会导致电池容量的快速衰减,这严重阻碍了锂硫电池的商业化进程.为了抑制LiPSs的穿梭效应和提高硫的利用率,本工作采用一步高温还原法合成了具有分级多孔结构的N,P共掺杂还原氧化石墨烯(NPG),并将... 多硫化物(LiPSs)的穿梭效应和低硫利用率会导致电池容量的快速衰减,这严重阻碍了锂硫电池的商业化进程.为了抑制LiPSs的穿梭效应和提高硫的利用率,本工作采用一步高温还原法合成了具有分级多孔结构的N,P共掺杂还原氧化石墨烯(NPG),并将其用于锂硫电池的隔膜改性.高导电性NPG具有丰富的分级多孔结构,提供了大量的LiPSs锚定位点和丰富的离子/电子传输通道,实现了可溶性中间体的快速转化,高效抑制了LiPSs的穿梭效应.归因于以上优点,NPG改性聚丙烯隔膜(NPG/PP)能够有效抑制LiPSs的穿梭并提高硫的利用率.结果表明,NPG/PP改性隔膜的电池展现出优异的循环性能(在1 C的电流密度下,循环500圈以后容量仍保持在612.5 mAh·g−1,每圈的衰减仅为0.052%)和出色的倍率性能(在2 C的电流密度下容量仍保持在617.9 mAh·g−1).这种构建分级多孔N,P共掺杂rGO改性隔膜的思路为锂硫电池的研究提供了新的方向. 展开更多
关键词 锂硫电池 多硫化物 n p掺杂rGO 隔膜改性 穿梭效应
原文传递
First-principles study on electronic structure and optical properties of N-doped P-type β-Ga_2O_3 被引量:6
8
作者 ZHANG LiYing YAN JinLiang ZHANG YiJun LI Ting DING XingWei 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第1期19-24,共6页
The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N d... The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3. 展开更多
关键词 p-type β-Ga2O3 n-doped β-Ga2O3 FIRST-pRInCIpLES electronic structure optical properties
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部