以三聚氰胺苯甲酸盐为碳源和氮源、以三聚氰胺磷钼酸盐为钼源、磷源和氮源,采用程序升温的方法制备了系列N,P掺杂型C@Mo_2C催化剂。采用XRD、SEM、TEM和XPS等对催化剂的结构、形貌和表面特性进行了表征,研究了三聚氰胺苯甲酸盐中n(三聚...以三聚氰胺苯甲酸盐为碳源和氮源、以三聚氰胺磷钼酸盐为钼源、磷源和氮源,采用程序升温的方法制备了系列N,P掺杂型C@Mo_2C催化剂。采用XRD、SEM、TEM和XPS等对催化剂的结构、形貌和表面特性进行了表征,研究了三聚氰胺苯甲酸盐中n(三聚氰胺)/n(苯甲酸)、前驱体中n(C)/n(Mo)等因素对所制备催化剂的结构及其在二氧化碳加氢反应中催化性能的影响。在反应温度为220℃、反应压力为3.0 MPa、空速为3 600 m L/(g·h)的条件下,在N,P掺杂型C@Mo_2C的催化作用下,CO_2转化率可以达到12.2%,此时产物中CH_3OH的选择性达到52.2%。展开更多
Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping tr...Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.展开更多
This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage a...This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.展开更多
The electronic structure of catalytic active sites can be influenced by modulating the coordination bonding of the central single metal atom,but it is difficult to achieve.Herein,we reported the single Zn-atom incorpo...The electronic structure of catalytic active sites can be influenced by modulating the coordination bonding of the central single metal atom,but it is difficult to achieve.Herein,we reported the single Zn-atom incorporated dual doped P,N carbon framework(Zn-N_(4)P/C)for ORR via engineering the surrounding coordination environment of active centers.The Zn-N_(4)P/C catalyst exhibited comparable ORR activity(E_(1/2)=0.86 V)and significantly better ORR stability than that of Pt/C catalyst.It also shows respectable performance in terms of maximum peak power density(249.6 mW cm^(-2)),specific capacitance(779 mAh g^(-1)),and charge-discharge cycling stability for 150 hours in Zn-air battery.The high catalytic activity is attributed to the uniform active sites,tunable electronic/geometric configuration,optimized intrinsic activity,and faster mass transfer during ORR-pathway.Further,theoretical results exposed that the Zn-N_(4)P configuration is more electrochemically active as compared to Zn-N_(4) structure for the oxygen reduction reaction.展开更多
The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N d...The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3.展开更多
文摘以三聚氰胺苯甲酸盐为碳源和氮源、以三聚氰胺磷钼酸盐为钼源、磷源和氮源,采用程序升温的方法制备了系列N,P掺杂型C@Mo_2C催化剂。采用XRD、SEM、TEM和XPS等对催化剂的结构、形貌和表面特性进行了表征,研究了三聚氰胺苯甲酸盐中n(三聚氰胺)/n(苯甲酸)、前驱体中n(C)/n(Mo)等因素对所制备催化剂的结构及其在二氧化碳加氢反应中催化性能的影响。在反应温度为220℃、反应压力为3.0 MPa、空速为3 600 m L/(g·h)的条件下,在N,P掺杂型C@Mo_2C的催化作用下,CO_2转化率可以达到12.2%,此时产物中CH_3OH的选择性达到52.2%。
文摘Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.
文摘This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.
文摘The electronic structure of catalytic active sites can be influenced by modulating the coordination bonding of the central single metal atom,but it is difficult to achieve.Herein,we reported the single Zn-atom incorporated dual doped P,N carbon framework(Zn-N_(4)P/C)for ORR via engineering the surrounding coordination environment of active centers.The Zn-N_(4)P/C catalyst exhibited comparable ORR activity(E_(1/2)=0.86 V)and significantly better ORR stability than that of Pt/C catalyst.It also shows respectable performance in terms of maximum peak power density(249.6 mW cm^(-2)),specific capacitance(779 mAh g^(-1)),and charge-discharge cycling stability for 150 hours in Zn-air battery.The high catalytic activity is attributed to the uniform active sites,tunable electronic/geometric configuration,optimized intrinsic activity,and faster mass transfer during ORR-pathway.Further,theoretical results exposed that the Zn-N_(4)P configuration is more electrochemically active as compared to Zn-N_(4) structure for the oxygen reduction reaction.
基金supported by the National Natural Science Foundation of China (Grant No. 10974077)the Natural Science Foundation of Shandong Province, China (Grant No. 2009ZRB01702)the Project of Shandong Province Higher Educational Science and Technology Program (Grant No. J10LA08)
文摘The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3.
