We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, hi...TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通...以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通过EDS和UV-Vis吸收光谱表征了薄膜的成分及光学性能,结果表明,当沉积温度为350℃时,N/C-TiO_2薄膜的N、C质量分数最高,其禁带宽度降低为2. 82 e V,对可见光的吸收最强。与纯的二氧化钛薄膜相比,N/C-TiO_2薄膜对亚甲基蓝的降解率显著提高到90%。展开更多
P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy...P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.展开更多
Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that t...Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.展开更多
The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability ...The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability s<sub>o</sub> increases linearly from 0 to 0.03 as normal component of translational energy of the molecuar beam E<sub>n</sub> increases from 11.00 to 19.91 kcal/mol for N<sub>2</sub>/Ni system and S<sub>0</sub> from 0 to 0. 10 as E<sub>n</sub> from 10. 40 to 19.91 kcal/mol for N<sub>2</sub>/La system. The apparent activation energy △E are 6.16 kcal/mol and 5.30 kcal/mol for N<sub>2</sub>/Ni and N<sub>2</sub>/La systems respectively.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with th...Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with the increase of the substrate temperature （Ts） and the annealing temperature （Ta）. It is more difficult for nitrogen atoms to enter the Fe lattice under higher Ts above 150℃. The phase evolution is visible at higher Ta above 200℃. The phase transformation of α＇＇-Fe16N2 occurred at 400℃. The change of crystal size with Ta was clearly visible from bright and dark field images. The clear high-resolution electron microscope （HREM） images of 110α, 111γ＇, 112α＇＇, and 200α＇＇ phases were observed. The interplanar distances from TEM （transmission electron microscope） and HREM match the calculated values very well. From the results of the vibrating sample magnetometer （VSM）, the good magnetic properties of Fe-N films were obtained at 150℃ of Ts and 200℃ of Ta, respectively.展开更多
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
基金This work was supported by the National Natural Science Foundation of China(No,50376067)the Plan for Science&Technology Development of Guangzhou(2001-Z-117-01).
文摘TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
文摘以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通过EDS和UV-Vis吸收光谱表征了薄膜的成分及光学性能,结果表明,当沉积温度为350℃时,N/C-TiO_2薄膜的N、C质量分数最高,其禁带宽度降低为2. 82 e V,对可见光的吸收最强。与纯的二氧化钛薄膜相比,N/C-TiO_2薄膜对亚甲基蓝的降解率显著提高到90%。
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038
文摘P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.
基金the Key Programme of the Education Department of Hubei Province,China(2003A001,D200529002)
文摘Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.
基金Project supportec by the National Natural Science Foundation of China
文摘The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability s<sub>o</sub> increases linearly from 0 to 0.03 as normal component of translational energy of the molecuar beam E<sub>n</sub> increases from 11.00 to 19.91 kcal/mol for N<sub>2</sub>/Ni system and S<sub>0</sub> from 0 to 0. 10 as E<sub>n</sub> from 10. 40 to 19.91 kcal/mol for N<sub>2</sub>/La system. The apparent activation energy △E are 6.16 kcal/mol and 5.30 kcal/mol for N<sub>2</sub>/Ni and N<sub>2</sub>/La systems respectively.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
基金supported by the National Natural Science Foundation of China(No.50674071)Tianjin Natural Science Foundation of China(No.06YFJZJC01300)+1 种基金the Program for New Century Excellent Talents in University(NCET-06-0245)the Platform Project of Tianjin for Innovation in Science and Technology and Environmental Construction(No.06TXTJJC13900).
文摘Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with the increase of the substrate temperature （Ts） and the annealing temperature （Ta）. It is more difficult for nitrogen atoms to enter the Fe lattice under higher Ts above 150℃. The phase evolution is visible at higher Ta above 200℃. The phase transformation of α＇＇-Fe16N2 occurred at 400℃. The change of crystal size with Ta was clearly visible from bright and dark field images. The clear high-resolution electron microscope （HREM） images of 110α, 111γ＇, 112α＇＇, and 200α＇＇ phases were observed. The interplanar distances from TEM （transmission electron microscope） and HREM match the calculated values very well. From the results of the vibrating sample magnetometer （VSM）, the good magnetic properties of Fe-N films were obtained at 150℃ of Ts and 200℃ of Ta, respectively.
