该文通过4H-Si C Pi N二极管的模拟,给4H-Si C Pi N二极管加了一个5V电压,在室温T=300K的情况下分析了4H-Si C Pi N二极管的直流特性和温度特性,从而介绍了Synopsys Inc.开发的新一代的器件物理特性仿真工具Sentaurus Device的一些仿真...该文通过4H-Si C Pi N二极管的模拟,给4H-Si C Pi N二极管加了一个5V电压,在室温T=300K的情况下分析了4H-Si C Pi N二极管的直流特性和温度特性,从而介绍了Synopsys Inc.开发的新一代的器件物理特性仿真工具Sentaurus Device的一些仿真功能。展开更多
The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal dif...The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.展开更多
本文介绍了一款新颖的PRA(Pattern Reconfigurable Antenna)。天线辐射单元主要由三部分组成:包括矩形驱动贴片,两个对称的开了CRS(Cross Ring Slot)的半圆形寄生单元以及地平面。两组p-i-n二极管分别放置在十字形环缝隙上,通过这两组p-...本文介绍了一款新颖的PRA(Pattern Reconfigurable Antenna)。天线辐射单元主要由三部分组成:包括矩形驱动贴片,两个对称的开了CRS(Cross Ring Slot)的半圆形寄生单元以及地平面。两组p-i-n二极管分别放置在十字形环缝隙上,通过这两组p-i-n二极管电开关将它们连接起来,从而可以实现辐射方向图可调。仿真结果表明,天线在4.29GHz^4.87GHz频率范围内S11<-10d B,阻抗带宽大于500MHz,具备良好的宽带特性。并且具有三种辐射方向图,可以通过p-i-n二极管电开关灵活控制,实现方向图可重构特性。展开更多
A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the inf...A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.展开更多
Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh...Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.展开更多
文摘该文通过4H-Si C Pi N二极管的模拟,给4H-Si C Pi N二极管加了一个5V电压,在室温T=300K的情况下分析了4H-Si C Pi N二极管的直流特性和温度特性,从而介绍了Synopsys Inc.开发的新一代的器件物理特性仿真工具Sentaurus Device的一些仿真功能。
文摘The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.
基金The authors are grateful for the support from the ＂Thousands Talents＂ Program for Pioneer Researchers and Their Innovation Teams, China the President＇s Funding of the Chinese Academy of Sciences+3 种基金 the National Natural Science Foundation of China （Nos. 51272238, 21321062, 51432005 and 61405040） the Innovation Talent Project of Henan Province （No. 13HASTIT020） the Talent Project of Zhengzhou University （No. ZDGD13001） and the Surface Engineering Key Lab of LIPCAST the Tsinghua University Initiative Scientific Research Program, the National Natural Science Foundation of China （No. 61306105）.
文摘A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.
基金This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China （Nos. 61322407, 11474058, and 11322441）, the Chinese Na- tional Science Fund for Talent Training in Basic Science （No. J1103204）, and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.
文摘Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
