N光子康普顿散射的程序设计

笔者以N光子康普顿散射公式为基础，进行问题分析，用Matlab语言编写程序，并介绍了程序的设计思路和程序可以实现的功能，并对结果做出分析．

N光子集团的Compton散射截面

采用量子化辐射场与相对论电子作用的模型,从微扰论得出的跃迁概率表达式出发,导出了n光子集团与电子发生Compton散射的跃迁概率表达式.进而研究了 n光子集团Compton散射的光子散射截面性质,得出了双光子Compton散射的光子散射截面的具体表达式,结果表明n光子Gompton散射的光子微分散射截面不仅与散射角（光子入射方向与散射方向的夹角）有关,还与入射光场的光子数密度以及初始电子的能量有关.

利用显性光子突变体N1进行陆地棉衣分性状的遗传研究

棉花纤维产量与衣分呈高度正相关,因此对棉花衣分性状的遗传研究尤为重要。本研究用衣分差异较大的显性光子突变体N1和TM-1所配制的杂交组合对衣分性状进行了遗传研究。由F2的衣分频数分布以及P1、P2和F1的衣分数据推测,TM-1中高衣分性状受一个显性主基因控制,与光子基因(N1)的显性方向相反。用SPSS11.5对F2群体的短绒和衣分性状做相关性分析,结果表明衣分与光子之间存在极显著负相关,光子基因(N1)对衣分具有减效作用,可解释表型变异的24.44%。利用P1、P2、F1和F2等4个世代联合分离分析方法,对该组合的衣分性状进行主基因-多基因混合遗传模型分析,结果表明,该组合中衣分的最适遗传模型为一对加性-显性主基因+加性-显性-上位性多基因模型,主基因和多基因遗传率分别是82.70%和5.65%。

光子陷阱的量子特性

本文用完全量子化方法讨论了有趣的光子陷阱现象.

多光子作用下的几何相位

本文使用含时规范变换方法针对计算单模光场和单个二能级原子相互作用n光子[1]情形下的几何相位,得出:体系非绝热近似的几何相位正比于平均光子数m,而反比于跃迁的光子数n;在特定条件下,非绝热几何相位与绝热几何相位一致,否则出现附加的非平庸相因子.

The Influence of Rapid Thermal Annealing on SiGe/Si Multiple-Quantum Wells p_-i_-n Photodiodes

The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.

Theoretical Studies on Structures and Spectroscopic Properties of Highly Efficient Phosphorescent [Ru（terpy）（phen）X]＋ Complexes

The ground and the lowest-lying triplet excited state geometries, electronic structures, and spectroscopic properties of three mixed-ligand Ru（II） complexes [Ru（terpy）（phen）X]＋ （terpy=2,2＇,6＇,2″-terpyridine, phen=l,10-phenanthroline, and X=-C-=CH （1）, X=Cl （2）, X-CN （3）） were investigated theoretically using the density functional theory method. The ground and excited state geometries have been fully optimized at the B3LYP/LanL2DZ and UB3LYP/LanL2DZ levels, respectively. The absorption and emission spectra of the com- plexes in CHaCN solutions were calculated by time-dependent density functional theory with the PCM solvent model. The calculated bond lengths of Ru-C, Ru-N, and Ru-Cl in the ground state agree well with the corresponding experimental results. The highest occupied molecular orbital were dominantly localized on the Ru atom and monodentate X ligand for 1 and 2, Ru atom and terpy ligand for a, while the lowest unoccupied molecular orbital were π＊（terpy） type orbital. Therefore, the lowest-energy absorptions of 1 and 2 at 688 and 631 nln are attributed to a dyz （Ru）＋Tr/p（X）--π＊ （terpy） transition with MLCT/XLCT （metal-to-ligand charge transfer/X ligand to terpy ligand charge transfer） character, whereas that of 3 at 529 nm is related to a dyz （Ru）＋π（terpy）-π＊ （terpy） transition with MLCT and ILCT transition character. The calculated phosphorescence of three complexes at 1011 nm （1）, 913 nm （2）, and 838 nm （3） have similar transition properties to that of the lowest-lying absorption. It is shown that the lowest lying absorptions and emissions transition character of these Ru（II） complexes can be tuned by changing the electron-withdrawing ability of the monodentate ligand.

Sulfur promoted n-π^(*)electron transitions in thiophene-doped g-C_(3)N_(4)for enhanced photocatalytic activity

Expanding the optical absorption range of photocatalysts is still a key endeavor in graphitic carbon nitride(g-C_(3)N_(4))studies.Here,we report on a novel thiophene group extending the optical property,which is assigned to n-π^(*)electronic transitions involving the two lone pairs on sulfur(TLPS).The as-prepared samples,denoted as CN-ThAx(where x indicates the amount of ThA added,mg),showed an additional absorption above 500 nm as compared to pristine g-C_(3)N_(4).Further,the thiophene group enhanced charge carrier separation to suppress e‒/h+pair recombination.The experimental results suggest that the thiophene group can obstruct the polymerization of melem to generate a large plane,thus exposing the lone electron pairs on the sulfur.The photocatalytic activity was evaluated in the decomposition of bisphenol A and H2 evolution.Compared with g-C_(3)N_(4),the optimized CN-ThA_(30) sample led to a 6.6-and 2-fold enhancement of the degradation and H2 generation rates,respectively.The CN-ThA_(30) sample allowed for synchronous H2 production and BPA decomposition.

Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering

N-doped ZnO films were radio frequency(RF)sputtered on glass substrates and studied as a function of oxygen partial pressure(OPP)ranging from 3.0×10-4 to 9.5×10-3 Pa.X-ray diffraction patters confirmed the polycrystalline nature of the deposited films.The crystalline structure is influenced by the variation of OPP.Atomic force microscopy analysis confirmed the agglomeration of the neighboring spherical grains with a sharp increase of root mean square(RMS)roughness when the OPP is increased above 1.4×10-3 Pa.X-ray photoelectron spectroscopy analysis revealed that the incorporation of N content into the film is decreased with the increase of OPP,noticeably N 1s XPS peaks are hardly identified at 9.5×10-3 Pa.The average visible transmittance(380-700 nm) is increased with the increase of OPP(from～17%to 70%),and the optical absorption edge shifts towards the shorter wavelength.The films deposited with low OPP(≤3.0×10-4 Pa)show n-type conductivity and those deposited with high OPP(≥9.0×10-4 Pa)are highly resistive(>105Ω·cm)

Amplitude-Nth-power squeezing of PB phase coherent states

PB Phase Coherent States are very important quantum states in quantum optics. In order to investigate the amplitude-Nth-power squeezing of PB Phase Coherent States, we introduce the algebraic properties of the PB phase operator and the PB Phase Coherent States which are constructed by PB phase theory. We applied amplitude-Nth-power squeezing theory to define the Amplitude-Nth-Power Squeezing of PB Phase Coherent States and investigate the characteristic of the amplitude-Nth-power squeezing of PB Phase Coherent States. We obtained surprising results, in that the results were different from the other quantum states. As for |Z〉(PB Phase Coherent State), the results show that when Z is a real number there only exists amplitude-Nth-power squeezing of component; when Z is a complex number, there exists amplitude-Nth-power squeezing of component and component; when Z is a pure imaginary number, if N is odd, then there does not exist amplitude-Nth-power squeezing of component, but there exists amplitude-Nth-power squeezing of component and if N is even, then there exists amplitude-Nth-power squeezing of component, but there does not exist amplitude-Nth-power squeezing of component.

Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification

We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra.

First-principles study on electronic structure and optical properties of N-doped P-type β-Ga_2O_3

The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3.

Nano-photonic crystal formation on highly-doped n-type silicon

We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon(PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model(CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon.

Characterization of chromophoric dissolved organic matter(CDOM) in the East China Sea in autumn using excitationemission matrix(EEM) fluorescence and parallel factor analysis(PARAFAC)

Samples of chromophoric dissolved organic matter （CDOM） in the East China Sea in autumn （October in 2011） were analyzed by excitation emission matrix （EEM） fluorescence spectroscopy combined with parallel factor analysis （PARAFAC）. Three terrestrial humic-like components （C1, C2 and C3） and one protein-like component （C4） were identified. Based on spatial dis- tributions, as well as relationships with salinity, the following assignments were made. The three humic-like components （CI, C2 and C3） showed conservative mixing behavior and came mainly from riverine input. The protein-like component （C4） was considered a combination of autochthonous production and terrestrial inputs and a biologically labile component. Path analysis of samples from the middle and bottom layers revealed that the causal effects on C1 were -78.46% for salinity, and -21.54% for apparent oxygen utilization （AOU）; those on C2 were -76.43% for salinity, and -23.57% for AOU; those on C3 were -70.49% for salinity, 7.01% for Chl-a, and -22.50% for AOU; those on C4 were -55.54% for salinity, 14.6% for Chl-a, and -29.86% for AOU in middle layer; and those on C4 were -57.37% for salinity, 29.02% for Chl-a, and -13.61% for AOU in bottom layer. Results indicated that CDOM in tile East China Sea was mainly affected by terrestrial inputs, and microbial ac- tivities also played a key role in biogeochemical processes of CDOM. The application of the EEM-PARAFAC model present- ed a unique opportunity to observe compositional changes in CDOM in the East China Sea. In addition, the humification index （HIX） suggested that CDOM from the East China Sea was less stable and stayed shorter in the environment.