Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed

Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

Deposition and Characterisation of Nitrogen-Doped Zinc Oxide Thin Films by MOCVD Using Zinc Acetate—Ammonium Acetate Precursor

The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios of the zinc acetate-ammonium acetate additives, and each combination was used to deposit a thin film using metalorganic chemical vapour deposition (MOCVD) method. The produced thin films were characterised using Rutherford backscattering (RBS) spectroscopy, uv-visible spectrometry, x-ray diffractometry, four point probe measurements and optical microscopy. The deposited thin films showed a fairly consistent zinc:oxygen:nitrogen ratio of 4.4:3.7:1, the film structures were quasicrystalline and the sheet resistivities were high, while other familiar characteristics like optical transmittance, bandgap, thermal stability, etc. were maintained in the grown films. Applications in device fabrication and active sensor devices were hence envisaged as the emergent potentials of the thin films.

Effect of Zn and Ti mole ratio on microstructure and photocatalytic properties of magnetron sputtered TiO_2-ZnO heterogeneous composite film

Series of TiO 2-ZnO heterojunction composite films with different n（Zn）/n（Ti） ratios were prepared by UDP450 magnetron sputter ion plating equipment, and the mole ratio of Zn to Ti was controlled by adjusting the current values of sputtering target. The effects of n（Zn）/n（Ti） on the microstructures of TiO2-ZnO films were investigated by SEM, AFM, Raman and XPS, and their photocatalytic decomposition of methyl orange solutions was evaluated. The results show that an increase in n（Zn）/n（Ti） typically results in a decrease in the grain size of composite films firstly and then an increase of grain size, while an increase in n（Zn）/n（Ti） leads to an increase in film roughness firstly and then a decrease in film roughness. Both grain size and roughness of TiO2-ZnO films reach the maximum and minimum at n（Zn）/n（Ti） of 1/9.3, respectively. The n（Zn）/n（Ti） shows little effect on the valences of Zn and Ti elements, which mainly exist in the form of TiO2 and ZnO phases. The n（Zn）/n（Ti） has influence on the amount of anatase/rutile TiO2 heterojunction in the film. With increase of the n（Zn）/n（Ti）, the absorption intensity of the composite film increases and the absorption region extends to 450 nm, which is redshifted as much as 150 nm in comparison with the pure TiO2 films. However, the photocatalytic abilities of heterogeneous composite films do not depend on the n（Zn）/n（Ti） but rather on the microstructures of the TiO2-ZnO composite films. Degradation rate of the film reaches the maximum and the photocatalytic decomposition of pollutants works best when n（Zn）/n（Ti）=1：9.3.

Influence of Ti on Microstructure and Magnetic Properties of FePt Granular Films

在室温下,应用对靶直流磁控溅射设备在普通玻璃基片上制备了FePt(30 nm)／Ti(t nm)颗粒膜样品,随后,在真空中进行了原位退火。详细研究了Ti衬底层对FePt颗粒膜的微结构和磁特性的影响。X射线衍射图谱表明样品形成了较有序的L10织构,Ti和FePt形成了三元FePtTi合金。当Ti层厚度t=5 nm、退火温度Ta=500℃时,样品具有高度有序的L10织构、小的颗粒尺寸和优异的磁特性。矫顽力超过了6．7 kOe,饱和磁化强度为620emu／cc。并且具有较小的开关场分布。结果表明FePt／Ti颗粒膜系统可作为超高密度磁记录介质的候选者。

Effect of bias voltage on microstructure and nanomechanical properties of Ti films

In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and high-resolution transmission electron microscopy（HRTEM）. It is interesting to find that the microstructure of pure Ti films was characterized by the composite structure of amorphous-like matrix embodied with nanocrystallines, and the crystallization was improved with the increase of bias voltage. The hardness of Ti films measured by nanoindentation tests shows a linear relationship with grain sizes in the scale of 6-15 nm. However, the pure Ti films exhibit a soft tendency characterized by a smaller slope of Hall-Petch relationship. In addition, the effect of bias voltage on the growth orientation of Ti films was discussed.

氮含量对Ti-B-C-N薄膜微观结构和性能的影响

采用反应磁控溅射法在高速钢基体上制备氮原子分数分别为10.8%,15.6%,28.1%,36.4%的Ti-B-C-N薄膜,研究了氮含量对薄膜微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti-B-C-N薄膜均由α-Fe和Ti(C,N)纳米晶组成,具有Ti(C,N)纳米晶镶嵌在非晶基体相中的纳米复合结构;随着氮含量增加,非晶相含量增加,Ti(C,N)纳米晶的含量和晶粒尺寸减小;随着氮含量增加,Ti-B-C-N薄膜的显微硬度增大,摩擦因数和磨损率均减小,表面磨痕变浅,磨损机制由剥落和微观犁削转变为微观抛光。

Preparation of Diamond-like Carbon Films on the Surface of Ti Alloy by Electro-deposition

In this paper, diamond-like carbon (DLC) films were deposited on Ti alloy by electro-deposition. DLC films were brown andcomposed of the compact grains whose diameter was about 400 nm. Examined by XPS, the main composition of the filmswas carbon. In the Raman spectrum, there were a broad peak at 1350 cm^(-1) and a broad peak at 1600 cm^(-1), which indicatedthat the films were DLC films.

Wear-resisting Oxide Films for 900℃

A study was conducted to develop low-friction, wear-resistant surfaces on high temperature alloys for the temperature range from 26℃ to 900℃. The approach investigated consists of modifying the naturally occurring oxide film in order to improve its tribological properties. Improvement is needed at low temperatures where the oxide film, previously formed at high temperature, spalls due to stresses induced by sliding. Experiments with Ti, W and Ta additions show a beneficial effect when added to Ni and Ni-base alloys. Low friction can be maintained down to 100℃ from 900℃. For unalloyed Ni friction and surface damage increases at 400℃ to 500℃. Two new alloys were perpared based on the beneficial results of binary alloys and ZrO2 diffusion in Ni.Low friction at temperature above 500℃ and reasonable values (0.32~0.42) at low temperature are obtained.

EFFECT OF HEAT TREATMENT TEMPERATURE ON MICROSTRUCTURE AND PROPERTIES OF Ti-B-N FILM

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Microstructure and magnetic properties of Ti/Co/Ti films

The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1.

Fretting wear behavior of Ti/TiN multilayer film on uranium surface under various displacement amplitudes

Ti/TiN multilayer film was deposited on uranium surface by arc ion plating technique to improve fretting wear behavior. The morphology, structure and element distribution of the film were measured by scanning electric microscopy（SEM）, X-ray diffractometry（XRD） and Auger electron spectroscopy（AES）. Fretting wear tests of uranium and Ti/TiN multilayer film were carried out using pin-on-disc configuration. The fretting tests of uranium and Ti/TiN multilayer film were carried out under normal load of 20 N and various displacement amplitudes ranging from 5 to 100 μm. With the increase of the displacement amplitude, the fretting changed from partial slip regime（PSR） to slip regime（SR）. The coefficient of friction（COF） increased with the increase of displacement amplitude. The results indicated that the displacement amplitude had a strong effect on fretting wear behavior of the film. The damage of the film was very slight when the displacement amplitude was below 20 μm. The observations indicated that the delamination was the main wear mechanism of Ti/TiN multilayer film in PSR. The main wear mechanism of Ti/TiN multilayer film in SR was delamination and abrasive wear.

High Refractive Index Ti3O5 Films for Dielectric Metasurfaces

Ti33O55 films are deposited with the help of an electron beam evaporator for their applications in metasurfaces. The film of subwavelength （632nm） thickness is deposited on a silicon substrate and annealed at 400℃. The ellipsometry result shows a high refractive index above 2.5 with the minimum absorption coefficient in the visible region, which is necessary for high efficiency of transparent metasurfaces. Atomic force microscopy analysis is employed to measure the roughness of the as-deposited films. It is seen from micrographs that the deposited films are very smooth with the minimum roughness to prevent scattering and absorption losses for metasurface devices. The absence of grains and cracks can be seen by scanning electron microscope analysis, which is favorable for electron beam lithography. Fourier transform infrared spectroscopy reveals the transmission and reflection obtained from the film deposited on glass substrates. The as-deposited film shows high transmission above 60%, which is in good agreement with metasurfaces.

Antibacterial Activity of TiO₂/Ti Composite Photocatalyst Films Treated by Ultrasonic Cleaning

In this work, TiO2/Ti composite films were fabricated by 2-setp MCT and the following high temperature oxidation. Antibacterial activity of the composite films treated by ultrasonic cleaning to increase the performance reliability was examined. The prepared TiO2/Ti composite films showed high photocatalytic activity in the degradation of methylene blue solution. It is obvious that? TiO2/Ti composite films have antibacterial activity under UV irradiation.

Photoelectrocatalytic activity of two antimony doped SnO_2 films for oxidation of phenol pollutants

Two types of Sb-doped SnO2 films on titanium substrate were prepared by the combination of electro-deposition and dip-coating (Ti/SnO2-Sb2O4/SnO2-Sb2O4) and single dip-coating (Ti/SnO2-Sb2O4), respectively. The surface morphology and crystalline structure of both film electrodes were characterized using X-ray diffractometry(XRD) and scanning electron microscopy(SEM). XRD spectra indicate that the rutile SnO2 forms in two films and a TiO2 crystallite exists only in Ti/SnO2-Sb2O4 electrode. SEM images show that the surface morphology of two films is typically cracked-mud structure. The photooxidation experiment was proceeded to further confirm the two electrode activity. The results show that the photoelectrocatalytic degradation efficiency of Ti/SnO2-Sb2O4 electrode with sub-layer is higher than that of simple Ti/SnO2-Sb2O4 electrode using phenol as a model organic pollutant. The Ti/SnO2-Sb2O4/SnO2-Sb2O4 photoanode has a better photoelectrochemical performance than Ti/SnO2-Sb2O4 photoanode for the removal of organic pollutants from water.

Ti-Si-N films prepared by magnetron sputtering

A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double-target magnetron sputtering system in an Ar-N 2 gas mixture. The Ti-Si-N films were investigated by characterization techniques such as X-ray diffraction (XRD), atomic force microscope (AFM), electron probe microanalyzer (EPMA), scratch test and nanoindentation. The as-deposited films have a good adhesion to Al substrate and appear with smooth and lustrous surface. The films show nanocomposite structure with nano TiN grains embedded in an amorphous SiN x matrix. The maximum hardness of the films was achieved as high as 27 GPa. The influences of the N 2 flow rate and substrate temperature on the growth rate and quality of the films were also discussed. For all samples, the Ar flow rate was maintained constant at 10 ml min 1 , while the flow rate of N 2 was varied to analyze the structural changes related to chemical composition and friction coefficient. The low temperature in the deposited Ti-Si-N films favors the formation of crystalline TiN, and it leads to a lower hardness at low N 2 flow rate. At the same time, the thin films deposited are all crystallized well and bonded firmly to Al substrate, with smooth and lustrous appearance and high hardness provided. The results indicate that magnetron sputtering is a promising method to deposit hard films onto soft substrate.

Microstructure and abrasive wear behaviour of anodizing composite films containing Si C nanoparticles on Ti6Al4V alloy

Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.

Photocatalytic degradation of phenol in aqueous solution using TiO_2/Ti thin film photocatalyst

In order to clarify the respective role of the UV light, catalyst, external bias as well as their combined effects on the photodegradation process and to clarify the photocatalytic mechanism under different experimental conditions, a series of experiments were conducted in a shallow pond photoreactor with an effective volume of 100 mL using TiO 2/Ti thin film prepared by anodization as photocatalyst. A 300W UV lamp( E max =365 nm)was used as side light source. The effect of light intensity on photocatalysis was also conducted. The results show that photocatalytic oxidation is an effective method for phenol removal from waters. The degradation rate can be improved by applying an anodic bias to the TiO 2/Ti film electrode, phenol can not be decomposed under only 365 nm UV light irradiation even in the presence of hydrogen peroxide. In the range of our research, the phenol removal rate can be described in terms of pseudo first order kinetics.

Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method

Bi3.25La0.75Ti3O12（BLT）thin films were prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method.The effect of annealing on their structures and ferroelectric properties was investigated.The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550℃.The remmant polarization increnses and the coercive field decreases with the annealing temperature increasing.The leakage current density of the BLT films annealed at 700℃ is about 5.8×10^-8A/cm^2 at the electrie field of 250kv/cm.

Preparation and Anti-Oxidation Properties of Ti(CN) Films Deposited by P CVD

Using metallo-organatic compound TPT as the source of Ti, H13 mould steels were coated with Ti(CN) films by plasma-assisted chemical vapor deposition (PCVD) and the properties of Ti(CN) films were studied. Under the appropriate temperature and pressure, Ti(CN) films on H13 mould steel surfaces had the highest micro-hardness of HV1760 at 500°C, and the films showed excellent anti-oxidation property below 500°C. The lifetime of Ti(CN)-coated augers and dies could be enhanced 7 and 4 times longer than those of untreated respectively.

Growth of Free-standing Diamond Films on Graphite Substrates with Ti Interlayers

Free-standing diamond films, deposited using DC Arc Plasma Jet CVD method onto graphite substrates with titanium interlayers, have been investigated. The Ti interlayers were deposited by arc ion plating equipments. The thickness, morphology and composite phase of Ti interlayers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The titanium carbide (TiC) was detected in both sides of the interlayers, which played an important role with respect to reasonable adhesion with film and diamond nucleation. The semi-translucent diamond films were characterized by SEM and Raman spectrum. The sharp diamond peak with low intensity of amorphous carbon shows that diamond films have very high quality. The overall results suggest that plating Ti interlayer on graphite substrate is an effective way to obtain optical grade free-standing diamond films.